Infineon Technologies CY14B116N-Z30XI

Overview

CY14B116N-Z30XI from Infineon Technologies (formerly Cypress) is a 16-Mbit nonvolatile SRAM (nvSRAM) with ×16 organization (1024K × 16), 30-ns access time, 2.7–3.6 V supply, and industrial temperature range (–40 °C to +85 °C). It integrates QuantumTrap nonvolatile storage per cell, enabling automatic STORE on power-down and software/hardware-controlled RECALL-used in mission-critical data logging, industrial PLCs, and telecom control planes where volatile memory loss is unacceptable.

For engineers reviewing the CY14B116N-Z30XI datasheet, CY14B116N-Z30XI pinout, CY14B116N-Z30XI application, or CY14B116N-Z30XI equivalent, key selection considerations include ×16 bus interface compatibility, 30-ns timing margin for high-speed controllers, AutoStore capacitor (VCAP) support, HSB-driven hardware STORE signaling, and TSOP II package footprint constraints.

Technical Context

This nvSRAM combines a fast static RAM array (4096 × 4096) with parallel QuantumTrap nonvolatile elements, enabling bit-cell-level nonvolatility without external EEPROM or flash. STORE and RECALL operations are decoupled from SRAM read/write cycles-data persists across power cycles with no battery or external backup.

The device supports three STORE initiation modes: AutoStore (triggered by VCC drop below threshold), Hardware STORE (via active-low HSB assertion), and Software STORE (via command sequence). RECALL occurs automatically at power-up or via software command, with HSB indicating STORE/RECALL status and ZZ enabling Sleep mode (in FBGA variants only).

Key Specifications

Pinout & Package

Package: 54-pin Thin Small-Outline Package (TSOP II), 20.0 mm × 10.0 mm × 1.2 mm body, surface-mount, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with STK14CA8-3LF35I and FM16W08-30-TG, CY14B116N-Z30XI delivers superior data retention (20 years vs. 10), higher STORE endurance (1M vs. 100k), and proven immunity to voltage transients-making it optimal for industrial control and telecom infrastructure where reliability trumps raw write speed.

Availability

CY14B116N-Z30XI is available at Aetrix Electronics and suitable for industrial PLCs, telecom base stations, and medical diagnostic equipment requiring stable component supply, long-lifecycle support, and guaranteed nonvolatile data integrity across power interruptions.

Supply support for CY14B116N-Z30XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions acquired from Cypress Semiconductor.

CY14B116N-Z30XI belongs to Infineon's nvSRAM product line, engineered specifically for systems demanding zero-data-loss memory persistence without batteries, capacitors, or external controllers-targeting industrial automation, communications infrastructure, and safety-critical instrumentation.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

A 4.7 µF solid tantalum capacitor rated ≥6.3 V is the minimum recommended value per the datasheet. Lower values risk incomplete STORE during rapid VCC collapse; larger values (up to 10 µF) improve margin but increase board area and inrush current. The capacitor must be placed within 5 mm of the VCAP pin with low-inductance routing.

Can CY14B116N-Z30XI be used in a ×8 or ×32 configuration?

No-CY14B116N is fixed ×16 organization (1024K × 16). The "N" suffix explicitly denotes ×16 data width; ×8 variants use "L" (e.g., CY14B116L), and ×32 variants use "S" (e.g., CY14B116S). Pinout, address mapping, and DQ count differ across configurations-interchange is not electrically or logically compatible.

Does the HSB pin require an external pull-up resistor?

An external pull-up is optional but recommended. After STORE/RECALL, HSB is driven HIGH with standard output strength for tHHHD (≤100 ns), then held HIGH by a weak internal pull-up (~100 kΩ). An external 4.7 kΩ pull-up ensures faster, more robust HIGH-level establishment-critical for microcontroller GPIO interrupt detection.

Is Sleep mode supported in the 54-pin TSOP II package?

No-Sleep mode (activated via ZZ pin) is only available in the 165-ball FBGA package variant, as confirmed in the datasheet's Pin Definitions table and Feature Summary. The 54-pin TSOP II package lacks the ZZ pin entirely; therefore, CY14B116N-Z30XI in TSOP II operates only in Active or Standby modes, with standby current at 650 µA.