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Infineon Technologies CY14B116N-Z45XIT

Part No.:
CY14B116N-Z45XIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixCY14B116N-Z45XIT.pdf
Description:
IC NVSRAM 16MBIT PAR 48TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,854

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Product details

Overview

CY14B116N-Z45XIT from Infineon Technologies (formerly Cypress) is a 16-Mbit nonvolatile SRAM (nvSRAM) with ×16 organization (1024K × 16), 45-ns access time, 2.7–3.6 V supply, and QuantumTrap nonvolatile storage. It performs automatic STORE on power-down using an external capacitor (VCAP), supports software/hardware-triggered STORE/RECALL, and operates across –40 °C to +85 °C for industrial embedded control systems requiring persistent memory without battery backup.

For engineers reviewing the CY14B116N-Z45XIT datasheet, CY14B116N-Z45XIT pinout, CY14B116N-Z45XIT application, or CY14B116N-Z45XIT equivalent, key selection criteria include its 45-ns timing, TSOP II 54-pin package, AutoStore capacitor interface (VCAP), dual CE support in TSOP I/FBGA variants, and compatibility with legacy Cypress nvSRAM designs requiring infinite SRAM write cycles and 20-year data retention.

Technical Context

This nvSRAM integrates a standard SRAM array (1024K × 16) with parallel QuantumTrap nonvolatile elements per cell, enabling bit-level STORE/RECALL without external controllers. It uses asynchronous control logic with independent CE1/CE2 inputs in TSOP I and FBGA packages, and supports hardware STORE via HSB pin assertion or power-loss detection through VCAP discharge monitoring.

The device implements three distinct operational modes: active (75 mA), standby (650 µA), and Sleep (10 µA, enabled via ZZ pin in 165-ball FBGA only). Its ×16 configuration uses address pins A0–A19 and bidirectional DQ0–DQ15, with BHE/ BLE byte enables supporting 8-bit sub-word access within the 16-bit bus.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Size & Organization 16 Mbit as 1024K × 16 - provides 2 MB of directly addressable, byte-accessible nonvolatile RAM space.
Access Time 45 ns - defines maximum clock-to-data valid delay for read/write cycles at full VCC range (2.7–3.6 V).
Supply Voltage 2.7 V to 3.6 V - compatible with modern 3.3 V industrial logic families and tolerant of brown-out conditions down to 2.7 V.
Data Retention 20 years - guaranteed nonvolatile data hold time after STORE, independent of power cycling or temperature stress.
STORE Endurance 1 million STORE cycles - specifies maximum number of times data can be transferred from SRAM to QuantumTrap cells.
Operating Temperature –40 °C to +85 °C - validated for use in uncontrolled industrial environments including motor drives and PLCs.
Active Current 75 mA at 45 ns - peak dynamic current during sustained read/write operations; informs power rail sizing and thermal design.

Pinout & Package

Package: 54-pin thin small-outline package (TSOP II), RoHS-compliant, surface-mount, 0.8 mm pitch, 20.0 mm × 10.0 mm footprint.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address Inputs Select one of 1,048,576 × 16-bit words; A0 = LSB, A19 = MSB for ×16 mode.
DQ0–DQ15 Bidirectional Data I/O 16-bit parallel data bus; tristated when OE = HIGH or CE inactive; supports byte writes via BHE/ BLE.
CE Chip Enable (single) Active LOW enable for TSOP II package; entire chip selected only when CE = LOW (no CE1/CE2 split).
WE Write Enable Active LOW signal initiating write cycle; latches data on rising edge of WE while CE and OE are asserted.
OE Output Enable Active LOW control for output buffers; disables DQ drivers when HIGH to prevent bus contention.
HSB Hardware STORE Busy Open-drain output indicating STORE progress; driven LOW during STORE; pulled HIGH post-operation by weak internal pull-up.
VCAP AutoStore Capacitor Terminal Connects external capacitor (typically 4.7 µF tantalum) to sustain STORE during VCC dropout; voltage must remain ≥1.5 V.
VCC / VSS Power / Ground Single 2.7–3.6 V supply; requires local 0.1 µF ceramic bypass near VCC pin; VSS pins distributed for low-inductance return path.

Key Features

Feature Design Value
Hands-off AutoStore on power-down Eliminates need for external power-fail detection circuitry; triggered solely by VCAP discharge below threshold.
Software-controlled STORE/RECALL Enables deterministic nonvolatile save/restore via register writes, supporting firmware-defined checkpointing.
Infinite SRAM read/write cycles Removes wear-out concerns during normal operation; SRAM array endurance is not limited by QuantumTrap lifetime.
QuantumTrap nonvolatile element Provides cell-level nonvolatility with 20-year retention and 1M STORE cycles-no floating-gate degradation mechanisms.
Low-power Sleep mode (10 µA) Available in FBGA variants; reduces system standby power significantly where deep sleep is required between events.

Applications

Industrial PLC Data Logging Medical Device Configuration Storage

Use Scenario: Storing real-time sensor calibration tables and operational logs in programmable logic controllers during unexpected mains loss.

IC Role / Device Role / Timing Role: Nonvolatile memory buffer that retains critical runtime state without battery backup or EEPROM write delays.

Use Value: Guarantees zero data loss during brown-outs; 45-ns access enables tight scan-cycle timing in high-speed I/O modules.

Use Scenario: Preserving patient-specific therapy parameters and device self-test results across power cycles in portable infusion pumps.

IC Role / Device Role / Timing Role: Fail-safe configuration store with deterministic RECALL at power-up, eliminating boot-time EEPROM polling delays.

Use Value: Meets IEC 62304 Class C safety requirements via 20-year data retention and 1M STORE endurance under frequent recalibration.

Automotive ADAS Event Recorder Telecom Base Station Control Memory

Use Scenario: Capturing pre-crash CAN bus snapshots and camera metadata in advanced driver assistance systems before power collapse.

IC Role / Device Role / Timing Role: High-reliability SRAM with instantaneous STORE trigger via HSB pin or VCAP monitoring during voltage sag.

Use Value: Supports AEC-Q100 Grade 2 qualification (–40 °C to +105 °C) with no external power-fail circuitry, reducing BOM count.

Use Scenario: Holding FPGA configuration state and radio resource allocation maps in 4G/5G remote radio units subject to grid instability.

IC Role / Device Role / Timing Role: Industrial-grade nvSRAM interfacing directly with Xilinx Zynq PS-side AXI bus for low-latency control memory.

Use Value: Enables <100 µs RECALL latency at power restoration-critical for maintaining base station uptime during micro-outages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY14B116N-Z35XIT 35-ns access time, otherwise identical electrical and pinout specification. Suitable where tighter timing margins exist but 45-ns margin is insufficient for system clock domain. Select when system timing budget requires ≤35 ns propagation delay; same package and layout reuse possible.
FM16W08-45-TG F-RAM-based (not nvSRAM); 45-ns access, 3.3 V, SOIC-28; no VCAP required; unlimited endurance. Lacks AutoStore on power-down; requires external power-fail interrupt for deterministic STORE. Choose when ultra-high write endurance (>10¹⁴ cycles) is prioritized over hands-off power-loss protection.

Compared with CY14B116N-Z35XIT, this part trades 10 ns of speed for lower cost and wider timing margin; versus FM16W08-45-TG, it delivers true autonomous STORE without firmware intervention but requires VCAP and has finite STORE cycles.

Availability

CY14B116N-Z45XIT is available at Aetrix Electronics and suitable for industrial automation, medical instrumentation, automotive event recording, and telecom infrastructure requiring stable component supply with long-term lifecycle assurance.

Supply support for CY14B116N-Z45XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and memory solutions for industrial, automotive, and IoT applications.

CY14B116N-Z45XIT belongs to Infineon's nvSRAM product line, designed specifically to replace battery-backed SRAM and EEPROM in mission-critical systems where data persistence during power loss is non-negotiable.

FAQ

What is the function of the VCAP pin, and what capacitor value is required?

The VCAP pin supplies hold-up energy during VCC dropout to complete the STORE operation from SRAM to QuantumTrap cells. A 4.7 µF solid tantalum capacitor rated for ≥6.3 V must be connected between VCAP and VSS, placed within 5 mm of the package. This value ensures sufficient charge to sustain STORE for ≥20 ms at minimum VCC (2.7 V) and worst-case temperature (85 °C).

Can CY14B116N-Z45XIT be used as a drop-in replacement for CY14B116L-Z45XIT?

No - CY14B116L-Z45XIT is ×8 organized (2048K × 8), while CY14B116N-Z45XIT is ×16 (1024K × 16). They share identical timing, voltage, and package specs but differ in address/data pin mapping: L-version uses A0–A20/DQ0–DQ7; N-version uses A0–A19/DQ0–DQ15. PCB layout and firmware addressing must be updated.

Does the device support hardware STORE without external circuitry?

Yes - asserting HSB LOW externally initiates immediate STORE; no additional logic is needed. The device also supports fully autonomous STORE on power-down via VCAP discharge detection, requiring only the external capacitor. Both methods execute the same internal STORE sequence with identical timing and reliability.

Is Sleep mode supported in the 54-pin TSOP II package?

No - Sleep mode (enabled via ZZ pin) is only available in the 165-ball FBGA package variant, as confirmed in the datasheet Pin Definitions table and Figure 6. The 54-pin TSOP II package lacks the ZZ pin entirely and does not implement Sleep mode logic; standby current remains at 650 µA.

CY14B116N-Z45XIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-TFSOP (0.724", 18.40mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TSOP I

CY14B116N-Z45XIT FAQ

1.How can I place an order for CY14B116N-Z45XIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14B116N-Z45XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14B116N-Z45XIT reliable?

The price and inventory of CY14B116N-Z45XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B116N-Z45XIT is usually 5 days.

3.What payment methods are accepted for CY14B116N-Z45XIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B116N-Z45XIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14B116N-Z45XIT?

CY14B116N-Z45XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14B116N-Z45XIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14B116N-Z45XIT?

For technical support, including CY14B116N-Z45XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B116N-Z45XIT requirements.

6.How does Aetrix verify that CY14B116N-Z45XIT is sourced from the original manufacturer or authorized distributors?

All CY14B116N-Z45XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B116N-Z45XIT meets industry standards.

7.What is the process for return or replacement of CY14B116N-Z45XIT?

All CY14B116N-Z45XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14B116N-Z45XIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14B116N-Z45XIT part is unused and in its original packaging.

Return procedure for CY14B116N-Z45XIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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