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Infineon Technologies CY14B116N-ZSP25XI

Part No.:
CY14B116N-ZSP25XI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
54-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY14B116N-ZSP25XI.pdf
Description:
IC NVSRAM 16MBIT PAR 54TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:183

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Product details

Overview

CY14B116N-ZSP25XI from Infineon Technologies (formerly Cypress) is a 16-Mbit nonvolatile SRAM organized as 1024K × 16, operating at 2.7–3.6 V with 25-ns access time. It integrates QuantumTrap nonvolatile storage per cell, enabling automatic STORE on power-down and software/hardware-controlled RECALL. Used in industrial control systems requiring persistent memory without battery backup.

For engineers reviewing the CY14B116N-ZSP25XI datasheet, CY14B116N-ZSP25XI pinout, CY14B116N-ZSP25XI application, or CY14B116N-ZSP25XI equivalent, key selection factors include ×16 bus width support, TSOP II 54-pin package, AutoStore timing under voltage droop, HSB signaling for STORE status, and sleep mode compatibility with industrial temperature range (–40 °C to +85 °C).

Technical Context

This nvSRAM combines a standard fast SRAM array (4096 × 4096) with parallel QuantumTrap nonvolatile elements. STORE transfers data from SRAM to nonvolatile cells via internal charge-pump circuitry powered by VCAP; RECALL restores data on power-up using stored charge.

Control logic supports three STORE initiation methods: AutoStore (triggered by VCC drop below threshold), hardware STORE (via HSB pin assertion), and software STORE (via command sequence). Sleep mode (enabled via ZZ pin) reduces current to 10 µA but is only available in 165-ball FBGA packages - not supported in this TSOP II variant.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density16 Mbit (1024K × 16 organization)
Access Time25 ns - guarantees read/write cycle completion within 25 ns at full speed operation
Supply Voltage2.7 V to 3.6 V - compatible with 3.3-V system rails and tolerant of brown-out conditions down to 2.7 V
Data Retention20 years - nonvolatile data preserved without power or refresh
STORE Endurance1 million cycles - maximum guaranteed STORE operations to QuantumTrap cells
Operating Temperature–40 °C to +85 °C - qualified for industrial ambient environments
Active Current75 mA at 45 ns - peak dynamic current during high-speed access (25 ns variant draws proportionally less)
Standby Current650 µA - quiescent draw when CE HIGH and device deselected

Pinout & Package

The CY14B116N-ZSP25XI is housed in a 54-pin Thin Small-Outline Package (TSOP II), RoHS-compliant, with 0.5-mm lead pitch and body dimensions of 18.4 mm × 10.16 mm. Pin 1 is marked by a beveled corner; pin numbering proceeds counterclockwise.

Pin/TerminalCircuit RoleDesign Meaning
A0–A19Address Input1024K-word addressing (20-bit address bus); A0 LSB, A19 MSB for ×16 mode
DQ0–DQ15Bidirectional Data I/O16-bit parallel data path; tristated when OE HIGH or CE HIGH
CEChip EnableActive LOW single CE input (TSOP II configuration); enables memory access when asserted
WEWrite EnableActive LOW control signal; initiates write cycle when CE and OE are active
OEOutput EnableActive LOW; enables output drivers during read; disables outputs when HIGH
HSBHardware STORE BusyOpen-drain output indicating STORE progress; pulled LOW externally to initiate STORE
VCAPAutoStore Capacitor TerminalConnects external capacitor (12 µF typical) to sustain STORE during VCC collapse
VCC / VSSPower / GroundSingle 3.3-V supply rail; multiple VSS pins provide low-inductance ground return paths
BHE / BLEByte EnableActive LOW controls upper/lower 8-bit byte lanes in ×16 mode; enables partial writes

Key Features

FeatureDesign Value
QuantumTrap Nonvolatile StorageEmbedded per-cell nonvolatile element enabling infinite SRAM read/write cycles without compromising nonvolatile endurance (1M STOREs)
Hands-off AutoStoreAutomatic STORE triggered solely by VCC decay - no host intervention or firmware overhead required
Multi-mode STORE InitiationSupports hardware (HSB pin), software (command sequence), and power-loss (AutoStore) STORE triggers - increases system design flexibility
Low-Power Standby650 µA standby current enables energy-sensitive applications where memory remains powered but idle
Industrial Temperature RatingValidated operation from –40 °C to +85 °C ensures reliability in harsh environments like factory automation and transportation systems

Applications

Programmable Logic Controller (PLC) MemoryIndustrial Data Logger

Use Scenario: Storing real-time I/O state, configuration parameters, and fault logs in PLCs during unexpected power loss.

IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory holding critical runtime variables; replaces battery-backed SRAM.

Use Value: Eliminates battery maintenance and failure risk while guaranteeing 20-year data retention without external power.

Use Scenario: Capturing sensor readings (temperature, pressure, vibration) at fixed intervals in remote monitoring units.

IC Role / Device Role / Timing Role: High-speed buffer with deterministic STORE latency (<10 ms) upon mains failure detection.

Use Value: Ensures zero-data-loss logging even during rapid AC dropout, leveraging 25-ns access and AutoStore timing.

Medical Diagnostic EquipmentRailway Signaling Controller

Use Scenario: Preserving calibration coefficients, last-scan settings, and diagnostic history in portable ultrasound or ECG devices.

IC Role / Device Role / Timing Role: ×16 interface matches microcontroller data bus width; HSB pin provides STORE status feedback to host MCU.

Use Value: Enables deterministic, software-verified STORE/RECALL sequences compliant with IEC 62304 safety requirements.

Use Scenario: Maintaining interlocking logic state and event timestamps in wayside signaling cabinets exposed to wide thermal swings.

IC Role / Device Role / Timing Role: Industrial-grade nvSRAM providing fail-safe memory for SIL-2/3 safety-critical subsystems.

Use Value: Meets EN 5012x environmental and reliability standards with validated –40 °C to +85 °C operation and 20-year retention.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
FM16W08-SG4-Mbit (512K × 8), 45-ns access, 2.7–3.6 V, uses ferroelectric RAM (FRAM); no VCAP capacitor requiredLimited density and slower access; better for low-power, low-density buffering where STORE frequency exceeds 1M cyclesSelect if ultra-low-power sleep (<1 µA) and unlimited STORE endurance outweigh density and speed needs
AS14B116N-25ZAISame 16-Mbit ×16 organization, 25-ns access, but in 48-pin TSOP I package; different pinout and dual CE (CE1/CE2)Requires PCB redesign due to incompatible footprint and CE signaling; lacks HSB pin for STORE status reportingChoose only if legacy board layout uses TSOP I and HSB feedback is unnecessary

Compared with FM16W08-SG and AS14B116N-25ZAI, CY14B116N-ZSP25XI delivers higher density, faster access, and precise STORE status via HSB - making it optimal for industrial systems needing robust, high-bandwidth nonvolatile memory with real-time control visibility.

Availability

CY14B116N-ZSP25XI is available at Aetrix Electronics and suitable for programmable logic controllers, industrial data loggers, medical diagnostic equipment, and railway signaling controllers requiring stable component supply across extended product lifecycles.

Supply support for CY14B116N-ZSP25XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and memory solutions for industrial, automotive, and IoT applications.

CY14B116N-ZSP25XI belongs to the Cypress nvSRAM product line, designed specifically to replace battery-backed SRAM in mission-critical industrial systems where data persistence, speed, and long-term reliability are mandatory.

FAQ

What is the function of the VCAP pin, and what capacitor value is required?

The VCAP pin supplies hold-up energy to complete the STORE operation during VCC collapse. A 12 µF tantalum or ceramic capacitor rated ≥6.3 V must be placed between VCAP and VSS, located within 10 mm of the pin. This capacitor sustains internal charge pumps long enough to transfer all SRAM contents to QuantumTrap cells - typically requiring ≥10 ms at nominal VCC decay rates.

Does CY14B116N-ZSP25XI support sleep mode, and how is it enabled?

No, sleep mode (ZZ pin functionality) is not supported in the 54-pin TSOP II package of CY14B116N-ZSP25XI. Sleep mode is only implemented in the 165-ball FBGA variant. In this TSOP II version, the ZZ pin is NC (no connect) and has no electrical function - power reduction relies solely on CE deassertion and standby current specification (650 µA).

How does AutoStore differ from Hardware STORE using the HSB pin?

AutoStore activates automatically when VCC drops below a threshold (~2.5 V), using residual charge on VCAP to execute STORE without host action. Hardware STORE is initiated by pulling HSB LOW externally, allowing precise timing control - e.g., before controlled shutdown. Both use the same QuantumTrap storage mechanism, but AutoStore requires no firmware involvement, whereas HSB-triggered STORE enables deterministic, synchronized nonvolatile save events.

Can CY14B116N-ZSP25XI be used in a ×8 or ×32 configuration?

No - CY14B116N is specifically configured as 1024K × 16 (×16 bus width). The "N" suffix denotes the ×16 organization; "L" indicates ×8 and "S" indicates ×32. Pinout, address mapping (A0–A19), and DQ0–DQ15 I/O assignment are fixed for ×16 operation. Attempting ×8 or ×32 use would result in incorrect addressing and data corruption.

CY14B116N-ZSP25XI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
54-TSOP (0.400", 10.16mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
25ns
Access Time:
25 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
54-TSOP II

CY14B116N-ZSP25XI FAQ

1.How can I place an order for CY14B116N-ZSP25XI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14B116N-ZSP25XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14B116N-ZSP25XI reliable?

The price and inventory of CY14B116N-ZSP25XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B116N-ZSP25XI is usually 5 days.

3.What payment methods are accepted for CY14B116N-ZSP25XI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B116N-ZSP25XI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14B116N-ZSP25XI?

CY14B116N-ZSP25XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14B116N-ZSP25XI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14B116N-ZSP25XI?

For technical support, including CY14B116N-ZSP25XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B116N-ZSP25XI requirements.

6.How does Aetrix verify that CY14B116N-ZSP25XI is sourced from the original manufacturer or authorized distributors?

All CY14B116N-ZSP25XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B116N-ZSP25XI meets industry standards.

7.What is the process for return or replacement of CY14B116N-ZSP25XI?

All CY14B116N-ZSP25XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14B116N-ZSP25XI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14B116N-ZSP25XI part is unused and in its original packaging.

Return procedure for CY14B116N-ZSP25XI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY14B116N-ZSP25XI Tags

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