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Infineon Technologies CY14B116S-BZ25XIT

Part No.:
CY14B116S-BZ25XIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY14B116S-BZ25XIT.pdf
Description:
IC NVSRAM 16MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,471

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Product details

Overview

CY14B116S-BZ25XIT from Infineon Technologies (formerly Cypress) is a 16-Mbit nonvolatile SRAM organized as 512K × 32, featuring QuantumTrap nonvolatile storage, 25-ns access time, and industrial temperature range (–40 °C to +85 °C). It supports software/hardware STORE/RECALL, AutoStore on power-down using VCAP, and operates at 2.7–3.6 V - deployed in industrial PLCs for real-time data logging with zero battery backup.

For engineers reviewing the CY14B116S-BZ25XIT datasheet, CY14B116S-BZ25XIT pinout, CY14B116S-BZ25XIT application, or CY14B116S-BZ25XIT equivalent, key selection criteria include ×32 bus width support, FBGA-165 package compatibility, VCAP-based hands-off STORE timing, sleep mode availability, and QuantumTrap endurance (1M STORE cycles, 20-year retention).

Technical Context

This nvSRAM integrates a full SRAM array (512K × 32) with parallel QuantumTrap nonvolatile elements per cell, enabling bit-level nonvolatility without external EEPROM or flash. STORE and RECALL are decoupled operations: STORE transfers SRAM contents to nonvolatile cells via hardware trigger (HSB), software command, or automatic power-loss detection; RECALL restores data on power-up or via software.

The device uses dual CE (CE1/CE2) logic in FBGA packages, supports byte enables BA–BD for ×32 operation, and implements ZZ-controlled Sleep mode (only in 165-ball FBGA). VCAP supplies regulated energy during brownout to complete STORE within tSTORE (max 20 ms), independent of system power rail collapse rate.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 512K × 32 (16 Mbit total); enables 32-bit wide data interface reducing bus cycle count vs ×8/×16 variants.
Access Time 25 ns; guarantees sub-25-ns read/write latency under VCC = 3.0–3.6 V and TA = –40 °C to +85 °C.
Nonvolatile Endurance 1 million STORE cycles; defines maximum number of times data can be saved to QuantumTrap cells before wear-out.
Data Retention 20 years at +85 °C; verified retention period for stored data without refresh or power.
VCC Operating Range 2.7 V to 3.6 V; compatible with 3.3-V systems including industrial microcontrollers and FPGAs.
Sleep Current 10 µA; achieved only in 165-ball FBGA package when ZZ = LOW, enabling ultra-low-power standby in edge devices.
VCAP Requirement 4.7 µF tantalum or ceramic capacitor; provides hold-up energy for full STORE completion during power failure.

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 11 × 13 mm, 0.8 mm pitch, RoHS-compliant. Supports ×32 data interface and dual CE architecture.

Pin/Terminal Circuit Role Design Meaning
A0–A18 Address inputs Select one of 524,288 (219) words in ×32 mode; A18 is MSB for full address space.
DQ0–DQ31 Bidirectional data I/O 32-bit parallel data path; supports burst reads/writes and byte-selectable access via BA–BD.
BA, BB, BC, BD Byte enable inputs (active LOW) Enable DQ[7:0], DQ[15:8], DQ[23:16], DQ[31:24] respectively; essential for partial-word writes in ×32 mode.
CE1 / CE2 Chip enable inputs Dual CE logic: device selected on falling CE1 (CE2=HIGH) or rising CE2 (CE1=LOW); enables precise timing control in high-speed systems.
HSB Hardware STORE Busy (I/O) Open-drain output signals STORE progress (LOW); externally pulled LOW to initiate STORE; internal weak pull-up returns HIGH post-operation.
ZZ Sleep mode enable input Active LOW entry into 10 µA sleep state; logically ANDed with CE - requires both CE active and ZZ LOW for sleep activation.
VCAP AutoStore capacitor connection Connects external 4.7 µF capacitor; supplies regulated current to complete STORE during VCC collapse - no external charge pump required.

Key Features

Feature Design Value
QuantumTrap nonvolatile cell Embedded per-cell nonvolatility eliminates need for external backup power or serial NV memory, reducing BOM and board area.
Hardware STORE via HSB pin External microcontroller can assert HSB to trigger immediate nonvolatile save - critical for deterministic crash recovery in motion control.
Software-controlled STORE/RECALL Issued via specific write sequences to reserved addresses; enables firmware-triggered save before firmware updates or configuration changes.
AutoStore on power-down Automatic STORE initiated when VCC drops below VCC(min); requires only VCAP capacitor - no system-level power-fail monitoring circuitry needed.
165-ball FBGA with ZZ sleep Only package supporting ZZ-enabled 10 µA sleep mode; enables long-term offline data retention in battery-constrained edge nodes.

Applications

Industrial Motion Controller Smart Energy Meter

Use Scenario: Real-time capture of motor position, torque, and fault logs during runtime; retains last valid state across unexpected AC loss.

IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory interfacing directly to FPGA fabric; serves as fail-safe register bank with <25 ns read/write timing.

Use Value: Eliminates supercapacitor or battery backup subsystem while guaranteeing 20-year data retention - reduces field failure risk and certification burden.

Use Scenario: Storing tariff schedules, tamper-event timestamps, and accumulated kWh counters in DIN-rail meters operating unattended for 15+ years.

IC Role / Device Role / Timing Role: Primary nonvolatile data store synchronized to metrology ASIC via ×32 parallel bus; supports concurrent read (metering) and write (logging) with no arbitration delay.

Use Value: Achieves IEC 62053-21 compliance for data integrity without external NV memory - simplifies design validation and reduces test coverage scope.

Railway Signaling Module Medical Diagnostic Imager

Use Scenario: Logging switch position history and interlocking logic states in EN 5012x-certified signaling cabinets exposed to wide thermal cycling (–40 °C to +70 °C).

IC Role / Device Role / Timing Role: Safety-critical nonvolatile buffer between ARM Cortex-R core and SIL-3 FPGA; stores diagnostic snapshots prior to watchdog reset.

Use Value: Meets EN 50129 requirement for "no single point of failure" by providing deterministic STORE within 20 ms of power anomaly - validated across 1M cycles.

Use Scenario: Capturing raw sensor frames during MRI pulse sequences where power interruption must not corrupt calibration or patient data buffers.

IC Role / Device Role / Timing Role: High-bandwidth frame buffer with atomic STORE capability; interfaces to Xilinx Zynq MPSoC via AXI HP port with ×32 data width.

Use Value: Enables zero-data-loss acquisition at 1.2 Gbps sustained throughput - avoids re-scanning patients due to power glitch-induced buffer corruption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
STK14CA8-350I-F 4-Mbit (512K × 8), 35 ns access, SOIC-28 package; uses NV cell technology with 100K STORE cycles and 10-year retention. Limited to ×8 interface and lower density; lacks sleep mode and VCAP-based AutoStore - requires external power-fail detection. Choose only for cost-sensitive, low-density legacy designs where ×32 bandwidth and 20-year retention are not required.
FM22L16-55-TG 2-Mbit (256K × 8), 55 ns access, 48-pin TSOP; ferroelectric RAM (FRAM) with unlimited endurance but 105 °C max operating temp. No AutoStore or HSB pin; relies on software-triggered save only; higher standby current (200 µA) and no sleep mode. Prefer for high-write-cycle applications (e.g., data loggers with >100k writes/day) where STORE timing determinism is secondary to endurance.

Compared with STK14CA8-350I-F and FM22L16-55-TG, CY14B116S-BZ25XIT uniquely delivers ×32 bandwidth, 25 ns speed, 1M STORE cycles, 20-year retention, and VCAP-driven hands-off AutoStore - making it the only option for new industrial designs requiring deterministic, maintenance-free nonvolatility at 16 Mbit density.

Availability

CY14B116S-BZ25XIT is available at Aetrix Electronics and suitable for industrial motion controllers, smart energy meters, railway signaling modules, and medical diagnostic imagers requiring stable component supply, long-lifecycle support, and guaranteed RoHS-compliant sourcing.

Supply support for CY14B116S-BZ25XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive ICs, and industrial control solutions with over 40 years of reliability engineering heritage.

CY14B116S-BZ25XIT belongs to Infineon's nvSRAM product line - designed specifically for mission-critical industrial applications demanding battery-free, deterministic nonvolatile data retention without compromising SRAM speed or interface flexibility.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B116S-BZ25XIT requires a minimum 4.7 µF tantalum or low-ESR ceramic capacitor on the VCAP pin to ensure full STORE completion during worst-case VCC droop (2.7 V → 2.0 V in <100 µs). Derating to 10 µF is recommended for extended temperature operation or high-reliability deployments.

Does the 165-ball FBGA package support both ×32 and ×16 configurations?

No - the CY14B116S-BZ25XIT is factory-configured exclusively for ×32 operation (512K × 32), as indicated by the "S" suffix. The 165-ball FBGA pinout includes BA–BD byte enables and A0–A18 address lines optimized for ×32; it does not support ×16 or ×8 modes.

Can HSB be used as an input-only signal to initiate STORE without monitoring its output state?

Yes - HSB functions as a dual-purpose pin: driving it LOW externally initiates STORE regardless of its output state. Monitoring HSB is optional; the device asserts it LOW only during STORE execution and releases it HIGH afterward via internal weak pull-up - no external pull-up is mandatory.

Is Sleep mode (ZZ) functional in all package types of CY14B116S?

No - Sleep mode is supported exclusively in the 165-ball FBGA package (e.g., CY14B116S-BZ25XIT). TSOP II, TSOP I, and 60-ball FBGA variants do not implement the ZZ pin function or the associated low-power circuitry - confirmed in datasheet revision *P, page 7, Pin Definitions footnote 9.

CY14B116S-BZ25XIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
16Mbit
Memory Organization:
512K x 32
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
25ns
Access Time:
25 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY14B116S-BZ25XIT FAQ

1.How can I place an order for CY14B116S-BZ25XIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14B116S-BZ25XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14B116S-BZ25XIT reliable?

The price and inventory of CY14B116S-BZ25XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B116S-BZ25XIT is usually 5 days.

3.What payment methods are accepted for CY14B116S-BZ25XIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B116S-BZ25XIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14B116S-BZ25XIT?

CY14B116S-BZ25XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14B116S-BZ25XIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14B116S-BZ25XIT?

For technical support, including CY14B116S-BZ25XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B116S-BZ25XIT requirements.

6.How does Aetrix verify that CY14B116S-BZ25XIT is sourced from the original manufacturer or authorized distributors?

All CY14B116S-BZ25XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B116S-BZ25XIT meets industry standards.

7.What is the process for return or replacement of CY14B116S-BZ25XIT?

All CY14B116S-BZ25XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14B116S-BZ25XIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14B116S-BZ25XIT part is unused and in its original packaging.

Return procedure for CY14B116S-BZ25XIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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