Infineon Technologies CY14B116S-BZ25XIT
- Part No.:
- CY14B116S-BZ25XIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY14B116S-BZ25XIT.pdf
- Description:
- IC NVSRAM 16MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY14B116S-BZ25XIT from Infineon Technologies (formerly Cypress) is a 16-Mbit nonvolatile SRAM organized as 512K × 32, featuring QuantumTrap nonvolatile storage, 25-ns access time, and industrial temperature range (–40 °C to +85 °C). It supports software/hardware STORE/RECALL, AutoStore on power-down using VCAP, and operates at 2.7–3.6 V - deployed in industrial PLCs for real-time data logging with zero battery backup.
For engineers reviewing the CY14B116S-BZ25XIT datasheet, CY14B116S-BZ25XIT pinout, CY14B116S-BZ25XIT application, or CY14B116S-BZ25XIT equivalent, key selection criteria include ×32 bus width support, FBGA-165 package compatibility, VCAP-based hands-off STORE timing, sleep mode availability, and QuantumTrap endurance (1M STORE cycles, 20-year retention).
Technical Context
This nvSRAM integrates a full SRAM array (512K × 32) with parallel QuantumTrap nonvolatile elements per cell, enabling bit-level nonvolatility without external EEPROM or flash. STORE and RECALL are decoupled operations: STORE transfers SRAM contents to nonvolatile cells via hardware trigger (HSB), software command, or automatic power-loss detection; RECALL restores data on power-up or via software.
The device uses dual CE (CE1/CE2) logic in FBGA packages, supports byte enables BA–BD for ×32 operation, and implements ZZ-controlled Sleep mode (only in 165-ball FBGA). VCAP supplies regulated energy during brownout to complete STORE within tSTORE (max 20 ms), independent of system power rail collapse rate.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 32 (16 Mbit total); enables 32-bit wide data interface reducing bus cycle count vs ×8/×16 variants. |
| Access Time | 25 ns; guarantees sub-25-ns read/write latency under VCC = 3.0–3.6 V and TA = –40 °C to +85 °C. |
| Nonvolatile Endurance | 1 million STORE cycles; defines maximum number of times data can be saved to QuantumTrap cells before wear-out. |
| Data Retention | 20 years at +85 °C; verified retention period for stored data without refresh or power. |
| VCC Operating Range | 2.7 V to 3.6 V; compatible with 3.3-V systems including industrial microcontrollers and FPGAs. |
| Sleep Current | 10 µA; achieved only in 165-ball FBGA package when ZZ = LOW, enabling ultra-low-power standby in edge devices. |
| VCAP Requirement | 4.7 µF tantalum or ceramic capacitor; provides hold-up energy for full STORE completion during power failure. |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 11 × 13 mm, 0.8 mm pitch, RoHS-compliant. Supports ×32 data interface and dual CE architecture.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address inputs | Select one of 524,288 (219) words in ×32 mode; A18 is MSB for full address space. |
| DQ0–DQ31 | Bidirectional data I/O | 32-bit parallel data path; supports burst reads/writes and byte-selectable access via BA–BD. |
| BA, BB, BC, BD | Byte enable inputs (active LOW) | Enable DQ[7:0], DQ[15:8], DQ[23:16], DQ[31:24] respectively; essential for partial-word writes in ×32 mode. |
| CE1 / CE2 | Chip enable inputs | Dual CE logic: device selected on falling CE1 (CE2=HIGH) or rising CE2 (CE1=LOW); enables precise timing control in high-speed systems. |
| HSB | Hardware STORE Busy (I/O) | Open-drain output signals STORE progress (LOW); externally pulled LOW to initiate STORE; internal weak pull-up returns HIGH post-operation. |
| ZZ | Sleep mode enable input | Active LOW entry into 10 µA sleep state; logically ANDed with CE - requires both CE active and ZZ LOW for sleep activation. |
| VCAP | AutoStore capacitor connection | Connects external 4.7 µF capacitor; supplies regulated current to complete STORE during VCC collapse - no external charge pump required. |
Key Features
| Feature | Design Value |
|---|---|
| QuantumTrap nonvolatile cell | Embedded per-cell nonvolatility eliminates need for external backup power or serial NV memory, reducing BOM and board area. |
| Hardware STORE via HSB pin | External microcontroller can assert HSB to trigger immediate nonvolatile save - critical for deterministic crash recovery in motion control. |
| Software-controlled STORE/RECALL | Issued via specific write sequences to reserved addresses; enables firmware-triggered save before firmware updates or configuration changes. |
| AutoStore on power-down | Automatic STORE initiated when VCC drops below VCC(min); requires only VCAP capacitor - no system-level power-fail monitoring circuitry needed. |
| 165-ball FBGA with ZZ sleep | Only package supporting ZZ-enabled 10 µA sleep mode; enables long-term offline data retention in battery-constrained edge nodes. |
Applications
| Industrial Motion Controller | Smart Energy Meter |
|---|---|
|
Use Scenario: Real-time capture of motor position, torque, and fault logs during runtime; retains last valid state across unexpected AC loss. IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory interfacing directly to FPGA fabric; serves as fail-safe register bank with <25 ns read/write timing. Use Value: Eliminates supercapacitor or battery backup subsystem while guaranteeing 20-year data retention - reduces field failure risk and certification burden. |
Use Scenario: Storing tariff schedules, tamper-event timestamps, and accumulated kWh counters in DIN-rail meters operating unattended for 15+ years. IC Role / Device Role / Timing Role: Primary nonvolatile data store synchronized to metrology ASIC via ×32 parallel bus; supports concurrent read (metering) and write (logging) with no arbitration delay. Use Value: Achieves IEC 62053-21 compliance for data integrity without external NV memory - simplifies design validation and reduces test coverage scope. |
| Railway Signaling Module | Medical Diagnostic Imager |
|
Use Scenario: Logging switch position history and interlocking logic states in EN 5012x-certified signaling cabinets exposed to wide thermal cycling (–40 °C to +70 °C). IC Role / Device Role / Timing Role: Safety-critical nonvolatile buffer between ARM Cortex-R core and SIL-3 FPGA; stores diagnostic snapshots prior to watchdog reset. Use Value: Meets EN 50129 requirement for "no single point of failure" by providing deterministic STORE within 20 ms of power anomaly - validated across 1M cycles. |
Use Scenario: Capturing raw sensor frames during MRI pulse sequences where power interruption must not corrupt calibration or patient data buffers. IC Role / Device Role / Timing Role: High-bandwidth frame buffer with atomic STORE capability; interfaces to Xilinx Zynq MPSoC via AXI HP port with ×32 data width. Use Value: Enables zero-data-loss acquisition at 1.2 Gbps sustained throughput - avoids re-scanning patients due to power glitch-induced buffer corruption. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK14CA8-350I-F | 4-Mbit (512K × 8), 35 ns access, SOIC-28 package; uses NV cell technology with 100K STORE cycles and 10-year retention. | Limited to ×8 interface and lower density; lacks sleep mode and VCAP-based AutoStore - requires external power-fail detection. | Choose only for cost-sensitive, low-density legacy designs where ×32 bandwidth and 20-year retention are not required. |
| FM22L16-55-TG | 2-Mbit (256K × 8), 55 ns access, 48-pin TSOP; ferroelectric RAM (FRAM) with unlimited endurance but 105 °C max operating temp. | No AutoStore or HSB pin; relies on software-triggered save only; higher standby current (200 µA) and no sleep mode. | Prefer for high-write-cycle applications (e.g., data loggers with >100k writes/day) where STORE timing determinism is secondary to endurance. |
Compared with STK14CA8-350I-F and FM22L16-55-TG, CY14B116S-BZ25XIT uniquely delivers ×32 bandwidth, 25 ns speed, 1M STORE cycles, 20-year retention, and VCAP-driven hands-off AutoStore - making it the only option for new industrial designs requiring deterministic, maintenance-free nonvolatility at 16 Mbit density.
Availability
CY14B116S-BZ25XIT is available at Aetrix Electronics and suitable for industrial motion controllers, smart energy meters, railway signaling modules, and medical diagnostic imagers requiring stable component supply, long-lifecycle support, and guaranteed RoHS-compliant sourcing.
Supply support for CY14B116S-BZ25XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive ICs, and industrial control solutions with over 40 years of reliability engineering heritage.
CY14B116S-BZ25XIT belongs to Infineon's nvSRAM product line - designed specifically for mission-critical industrial applications demanding battery-free, deterministic nonvolatile data retention without compromising SRAM speed or interface flexibility.
FAQ
What is the minimum VCAP capacitance required for reliable AutoStore operation?
The CY14B116S-BZ25XIT requires a minimum 4.7 µF tantalum or low-ESR ceramic capacitor on the VCAP pin to ensure full STORE completion during worst-case VCC droop (2.7 V → 2.0 V in <100 µs). Derating to 10 µF is recommended for extended temperature operation or high-reliability deployments.
Does the 165-ball FBGA package support both ×32 and ×16 configurations?
No - the CY14B116S-BZ25XIT is factory-configured exclusively for ×32 operation (512K × 32), as indicated by the "S" suffix. The 165-ball FBGA pinout includes BA–BD byte enables and A0–A18 address lines optimized for ×32; it does not support ×16 or ×8 modes.
Can HSB be used as an input-only signal to initiate STORE without monitoring its output state?
Yes - HSB functions as a dual-purpose pin: driving it LOW externally initiates STORE regardless of its output state. Monitoring HSB is optional; the device asserts it LOW only during STORE execution and releases it HIGH afterward via internal weak pull-up - no external pull-up is mandatory.
Is Sleep mode (ZZ) functional in all package types of CY14B116S?
No - Sleep mode is supported exclusively in the 165-ball FBGA package (e.g., CY14B116S-BZ25XIT). TSOP II, TSOP I, and 60-ball FBGA variants do not implement the ZZ pin function or the associated low-power circuitry - confirmed in datasheet revision *P, page 7, Pin Definitions footnote 9.
CY14B116S-BZ25XIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 512K x 32
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY14B116S-BZ25XIT FAQ
1.How can I place an order for CY14B116S-BZ25XIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B116S-BZ25XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B116S-BZ25XIT reliable?
The price and inventory of CY14B116S-BZ25XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B116S-BZ25XIT is usually 5 days.
3.What payment methods are accepted for CY14B116S-BZ25XIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B116S-BZ25XIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B116S-BZ25XIT?
CY14B116S-BZ25XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B116S-BZ25XIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B116S-BZ25XIT?
For technical support, including CY14B116S-BZ25XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B116S-BZ25XIT requirements.
6.How does Aetrix verify that CY14B116S-BZ25XIT is sourced from the original manufacturer or authorized distributors?
All CY14B116S-BZ25XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B116S-BZ25XIT meets industry standards.
7.What is the process for return or replacement of CY14B116S-BZ25XIT?
All CY14B116S-BZ25XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14B116S-BZ25XIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B116S-BZ25XIT part is unused and in its original packaging.
Return procedure for CY14B116S-BZ25XIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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