Infineon Technologies CY14B256LA-SP25XIT

Overview

CY14B256LA-SP25XIT from Infineon Technologies (formerly Cypress) is a 256-Kbit (32 K × 8) nonvolatile static RAM with QuantumTrap technology, delivering SRAM-speed read/write performance and autonomous STORE/RECALL on power loss. It operates at 3.0 V ±10%, supports 25 ns access time, features hardware/software-controlled STORE, automatic power-down STORE via VCAP capacitor, and guarantees 20-year data retention with 1 million STORE cycles.

For engineers reviewing the CY14B256LA-SP25XIT datasheet, CY14B256LA-SP25XIT pinout, CY14B256LA-SP25XIT application, or CY14B256LA-SP25XIT equivalent, key selection criteria include AutoStore timing dependency on VCAP capacitance, HSB-driven STORE busy signaling, software STORE address sequence integrity, and industrial temperature operation without external voltage translation.

Technical Context

The device integrates parallel SRAM and QuantumTrap nonvolatile cells per bit, enabling simultaneous STORE/RECALL across all 32,768 bytes. STORE is triggered by power collapse (via VCAP discharge), HSB pin assertion, or six-address software sequence; RECALL occurs automatically on VCC rise above VSWITCH or via software command.

It uses internal voltage regulation to charge VCAP, monitors write activity to suppress spurious AutoStore, and inhibits SRAM access during STORE/RECALL. The HSB pin serves dual roles: open-drain status output (LOW = busy) and active-LOW STORE request input, with built-in 100 kΩ weak pull-up and tHHHD high-pulse after each STORE completion.

Key Specifications

Pinout & Package

Package: 32-pin SOIC (Small Outline Integrated Circuit), RoHS-compliant, industrial-grade plastic body with 1.27 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with STK14CA8-3LF35I and FM24V02A-G, CY14B256LA-SP25XIT uniquely delivers integrated power-loss detection, VCAP-regulated STORE energy management, and HSB-driven hardware STORE - reducing system-level component count and firmware complexity for industrial edge devices.

Availability

CY14B256LA-SP25XIT is available at Aetrix Electronics and suitable for industrial data loggers, PLC memory backup systems, and railway signaling controllers requiring stable component supply, long-term lifecycle support, and guaranteed RoHS compliance.

Supply support for CY14B256LA-SP25XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive MCUs, and industrial memory solutions.

CY14B256LA belongs to Infineon's nvSRAM product line, engineered specifically for mission-critical industrial applications where data persistence during uncontrolled power loss cannot rely on batteries or external supervision.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B256LA-SP25XIT requires a minimum 0.1 µF X7R ceramic capacitor on the VCAP pin to ensure successful STORE completion during a 2.7 V to 2.0 V VCC droop. Lower values risk partial STORE failure and data corruption; larger values (e.g., 0.22 µF) improve margin but do not reduce STORE time.

Can the HSB pin be left floating if not used for hardware STORE initiation?

Yes - the HSB pin may be left unconnected when only AutoStore or software STORE is employed. Its internal 100 kΩ weak pull-up maintains HIGH state during idle periods. Floating HSB does not affect RECALL timing or SRAM functionality, and no external pull-up is required unless actively driving it LOW.

Does the software STORE sequence require continuous clocking or can it tolerate bus delays?

The six-address software STORE sequence must execute without intervening reads/writes to other addresses, but allows arbitrary delays between successive reads. Each read must be valid (CE/OE LOW, WE HIGH, address stable), and the sequence order (0x0E38 → 0x31C7 → 0x03E0 → ...) must be preserved exactly.

How does the device prevent STORE corruption during rapid power cycling?

CY14B256LA-SP25XIT incorporates write-activity gating: AutoStore and Hardware STORE are disabled unless at least one SRAM write has occurred since the last STORE or RECALL. This prevents repeated STORE attempts during repeated brownout/recovery cycles that would otherwise exceed the 1-million-cycle endurance limit.