Infineon Technologies CY14B256LA-SP45XI

Overview

CY14B256LA-SP45XI from Infineon Technologies (formerly Cypress) is a 256-Kbit (32 K × 8) nonvolatile SRAM with QuantumTrap technology, operating at 45 ns access time, single 3.0 V ±10% supply, and industrial temperature range (–40°C to +85°C). It integrates fast SRAM with embedded nonvolatile storage per cell, enabling automatic STORE on power-down via VCAP capacitor and software- or hardware-triggered STORE/RECALL cycles. Used in industrial PLCs for real-time data logging during unexpected power loss.

For engineers reviewing the CY14B256LA-SP45XI datasheet, CY14B256LA-SP45XI pinout, CY14B256LA-SP45XI application, or CY14B256LA-SP45XI equivalent, key selection criteria include AutoStore timing (tHRECALL = 20 ms max), HSB pin behavior during STORE busy state, VCAP capacitor sizing (0.1 µF), and compatibility with 32-pin SOIC footprint in space-constrained control modules.

Technical Context

The device implements a dual-cell architecture: standard SRAM array (512 × 512) paired with parallel QuantumTrap nonvolatile elements. STORE transfers data from SRAM to nonvolatile cells using charge stored on VCAP; RECALL restores data on power-up. Both operations inhibit SRAM access until completion.

Control logic supports three STORE initiation modes-AutoStore (voltage-triggered at VSWITCH ≈ 2.7 V), Hardware STORE (HSB pin assertion), and Software STORE (6-address read sequence). HSB serves as both input trigger and open-drain status output, driven LOW during active STORE/RECALL and HIGH otherwise with internal 100 kΩ pull-up.

Key Specifications

Pinout & Package

Package: 32-pin Small Outline Integrated Circuit (SOIC), 300 mil width, RoHS-compliant, lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with FM24V02A-G and MB85RS2MT-FPN-GE1, CY14B256LA-SP45XI delivers true SRAM timing transparency, hardware-managed STORE/RECALL, and direct drop-in replacement capability for existing 32K×8 parallel memory designs-without protocol conversion or voltage-monitoring firmware overhead.

Availability

CY14B256LA-SP45XI is available at Aetrix Electronics and suitable for industrial data loggers, programmable logic controllers, and smart energy meters requiring stable component supply, long-lifecycle support, and guaranteed RoHS-compliant manufacturing.

Supply support for CY14B256LA-SP45XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the full nvSRAM portfolio, including QuantumTrap-based devices. Infineon is a global semiconductor leader focused on power systems and automotive electronics.

CY14B256LA belongs to the Cypress nvSRAM product line, designed specifically for mission-critical industrial applications demanding zero-data-loss memory persistence without batteries or external supervision circuits.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The datasheet specifies a 0.1 µF ceramic capacitor on the VCAP pin for guaranteed AutoStore functionality across the full industrial temperature range and voltage drop profile. Using less than 0.1 µF risks incomplete STORE cycles and data corruption during rapid VCC collapse, especially below –20°C. Tantalum or electrolytic capacitors are not recommended due to ESR and aging effects.

Can CY14B256LA-SP45XI be used as a direct replacement for standard 32K×8 SRAMs like IS61LV256AL?

Yes-CY14B256LA-SP45XI uses identical pinout, timing, and electrical interface as standard 32K×8 SRAMs in 32-pin SOIC. All control signals (CE, OE, WE), address (A0–A14), and data (DQ0–DQ7) match. The only design additions are VCAP capacitor and optional HSB monitoring; unused pins (e.g., A10–A14 in SOIC) are NC and may be left floating.

How does the HSB pin behave during power-up RECALL?

During power-up RECALL, HSB is actively driven LOW by the device for the duration of tHRECALL (max 20 ms), signaling ongoing restore activity. It returns HIGH only after RECALL completes and the SRAM array is fully accessible. Host firmware must wait for HSB HIGH before issuing first read/write commands to avoid bus contention or undefined data.

Is Software STORE affected by write activity since last STORE/RECALL?

No-unlike AutoStore and Hardware STORE, Software STORE executes unconditionally upon successful completion of the six-address read sequence, regardless of whether any SRAM writes occurred since the prior STORE or RECALL. This enables deterministic firmware-controlled backup even after read-only operations or idle periods.