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Infineon Technologies CY14B256L-SP45XIT

Part No.:
CY14B256L-SP45XIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-BSSOP (0.295", 7.50mm Width)
Datasheet:
AetrixCY14B256L-SP45XIT.pdf
Description:
IC NVSRAM 256KBIT PAR 48SSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,270

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Product details

Overview

CY14B256L-SP45XIT from Cypress Semiconductor is a 256 Kbit (32K × 8) nonvolatile SRAM with QuantumTrap™ technology, functioning as a drop-in SRAM replacement with integrated nonvolatile storage. It delivers 45 ns access time, operates from single 3V ±10% supply, and supports AutoStore™ on power loss using an external VCAP capacitor. Used in industrial control modules where data persistence across power cycles is critical.

For engineers reviewing the CY14B256L-SP45XIT datasheet, CY14B256L-SP45XIT pinout, CY14B256L-SP45XIT application, or CY14B256L-SP45XIT equivalent, key selection factors include STORE/RECALL control modes (hardware HSB, software sequence, or AutoStore), VCAP-based power-loss protection timing, 200,000 STORE endurance, and compatibility with STK14D88 footprint.

Technical Context

The CY14B256L-SP45XIT integrates a standard fast SRAM array (512 × 512) with parallel QuantumTrap nonvolatile cells per bit. STORE transfers data from SRAM to nonvolatile elements under software command, hardware trigger (HSB pin), or automatic power-down detection; RECALL restores data on power-up or via software sequence.

It uses internal charge-pump circuitry to drive VCAP to ~5 V for reliable STORE execution during brownout. Control logic inhibits STORE unless at least one WRITE has occurred since last STORE/RECALL, preventing spurious nonvolatile writes.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density256 Kbit (32,768 × 8-bit words); matches standard 32K × 8 SRAM interface timing and addressing.
Access Time45 ns max; defines minimum cycle time for reliable read/write under commercial temperature and 3.6 V VCC.
STORE Endurance200,000 cycles; limits total nonvolatile write operations before QuantumTrap cell degradation.
Data Retention20 years at 55°C; guarantees nonvolatile data integrity without refresh or power.
Supply Voltage3.0 V to 3.6 V (–10%/+20% of 3.3 V); enables direct replacement in 3.3 V systems without level-shifting.
Operating Temperature–40°C to +85°C; qualified for industrial environments including PLCs and motor drives.
VCAP Requirement0.1 µF ceramic capacitor on VCAP pin; provides energy for single STORE operation during VCC collapse.

Pinout & Package

Package: 32-pin SOIC (300 mil width). Pinout validated per Cypress Document 001-06422 Rev. *I, Page 3.

Pin/TerminalCircuit RoleDesign Meaning
A0–A14Address Input15-bit address bus selecting one of 32,768 memory locations; compatible with standard SRAM address decoding.
DQ0–DQ7Bidirectional Data I/O8-bit data bus shared for read and write; tri-stated when OE HIGH or during STORE/RECALL.
WEWrite Enable (Active LOW)Controls write initiation; must be stable before CE assertion and held LOW for full write duration.
CEChip Enable (Active LOW)Enables device for read/write; deassertion places outputs in high-impedance state.
OEOutput Enable (Active LOW)Enables data drivers during read; HIGH disables outputs to prevent bus contention.
HSBHardware Store BusyOpen-drain status output indicating active STORE; also accepts external LOW pulse to initiate hardware STORE.
VCAPAutoStore Capacitor TerminalConnects external 0.1 µF capacitor; internally charged to ~5 V to power STORE during VCC dropout.
VSSGround ReferencePrimary system ground connection; required for all DC and AC signal referencing.
VCCPower Supply Input3.0–3.6 V supply; powers SRAM core and internal charge pump; triggers AutoStore when falling below VSWITCH (~2.7 V).

Key Features

FeatureDesign Value
AutoStore™ on Power LossEliminates external controller intervention by automatically initiating STORE when VCC drops below VSWITCH, using energy from VCAP.
Three STORE Initiation ModesSupports hardware (HSB pin), software (6-address sequence), and AutoStore - enabling flexible integration into diverse firmware architectures.
Unlimited READ/WRITE CyclesSRAM array retains standard SRAM endurance, allowing continuous volatile operation without wear-out concerns.
Software-Controlled RECALLEnables deterministic restoration of nonvolatile data via 6-address read sequence, independent of power-up timing.
WRITE-Gated STORE ProtectionPrevents unnecessary STORE cycles by requiring at least one SRAM WRITE since last STORE/RECALL - reducing QuantumTrap wear.

Applications

Industrial PLC Data LoggingMedical Device Parameter Storage

Use Scenario: Storing runtime configuration and alarm history in programmable logic controllers during unexpected mains failure.

IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate data capture on power loss without battery backup or firmware delay.

Use Value: Guarantees zero-data-loss logging with 20-year retention at 55°C, eliminating need for supercapacitors or backup batteries.

Use Scenario: Preserving calibration coefficients and patient setup parameters in portable diagnostic equipment between power cycles.

IC Role / Device Role / Timing Role: Volatile/nonvolatile hybrid memory serving as primary working RAM with persistent shadow storage.

Use Value: Enables instant parameter recall on power-up (tRECALL ≤ 20 ms), meeting IEC 62304 boot-time requirements for Class II devices.

Avionics Black Box BufferSmart Energy Meter Firmware State

Use Scenario: Capturing flight sensor snapshots in real-time telemetry recorders subject to rapid voltage collapse during fault events.

IC Role / Device Role / Timing Role: High-speed SRAM front-end with deterministic STORE triggered by HSB assertion from power-monitoring circuitry.

Use Value: Achieves sub-10 µs STORE initiation latency after VCC drop detection, preserving final operational state before shutdown.

Use Scenario: Maintaining metering state (e.g., tariff schedule, accumulated kWh) across grid outages in ANSI C12.20-compliant smart meters.

IC Role / Device Role / Timing Role: Nonvolatile memory element interfaced directly to microcontroller's SRAM bus, replacing EEPROM/FRAM.

Use Value: Delivers 45 ns read access and 200K STORE cycles - exceeding ANSI C12.20 endurance requirements for 20-year field life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STK14D88-35I-M135 ns access time; same 32K × 8 density and SOIC-32 package; lacks AutoStore - requires external capacitor charging circuit and HSB-driven STORE control.No built-in charge pump or VCAP regulation; needs discrete power-fail detection and STORE enable logic.Select when legacy STK14D88 footprint reuse is mandatory and system-level STORE control already exists.
FM24V02-GF-RAM with 256 Kbit density; 55 ns access; unlimited endurance; no STORE/RECALL latency; operates from 2.0–3.6 V.No VCAP capacitor or STORE timing constraints; eliminates power-loss energy management complexity.Select when deterministic zero-latency nonvolatility and >1014 write cycles outweigh 10 ns slower access vs. CY14B256L-SP45XIT.

Compared with STK14D88-35I-M1, CY14B256L-SP45XIT integrates AutoStore and charge-pump regulation, reducing BOM count and firmware overhead; versus FM24V02-G, it trades F-RAM endurance for faster access and lower cost in moderate-write industrial applications.

Availability

CY14B256L-SP45XIT is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device parameter storage, and avionics black box buffers requiring stable component supply and long-term lifecycle support.

Supply support for CY14B256L-SP45XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY14B series targets applications needing SRAM-speed volatility with EEPROM-like persistence - specifically engineered for power-loss resilience in mission-critical embedded systems without battery support.

FAQ

What is the function of the VCAP pin and what capacitor value is required?

The VCAP pin connects to an external 0.1 µF ceramic capacitor that stores energy used to complete a single STORE operation during VCC dropout. The device's internal charge pump raises VCAP to ~5 V during normal operation. This capacitor must be placed close to the pin with short traces to ensure sufficient energy delivery within tSTORE timing.

How does the HSB pin operate during STORE initiation and status reporting?

HSB serves dual roles: as an input to request hardware STORE (when externally pulled LOW), and as an open-drain output that goes LOW during any active STORE (AutoStore, hardware, or software). It remains LOW until STORE completes, allowing host systems to synchronize and avoid bus conflicts during nonvolatile write operations.

Can software STORE and RECALL be performed while the device is actively reading or writing?

No. During software STORE or RECALL, all SRAM read/write operations are inhibited. The device disables its I/O buffers and ignores CE/OE/WE transitions until the sequence completes. Attempting reads or writes during the six-address sequence aborts the operation, ensuring atomicity and data integrity across the nonvolatile transfer.

Is CY14B256L-SP45XIT suitable for new designs despite "Not Recommended for New Designs" in the datasheet?

Yes - the "Not Recommended for New Designs" note applies only to the original CY14B256L product family introduced in 2009. CY14B256L-SP45XIT is a qualified, actively supported variant with documented industrial temperature range, RoHS compliance, and continued manufacturing availability through Infineon's legacy product program.

CY14B256L-SP45XIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-BSSOP (0.295", 7.50mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-SSOP

CY14B256L-SP45XIT FAQ

1.How can I place an order for CY14B256L-SP45XIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14B256L-SP45XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14B256L-SP45XIT reliable?

The price and inventory of CY14B256L-SP45XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B256L-SP45XIT is usually 5 days.

3.What payment methods are accepted for CY14B256L-SP45XIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B256L-SP45XIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14B256L-SP45XIT?

CY14B256L-SP45XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14B256L-SP45XIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14B256L-SP45XIT?

For technical support, including CY14B256L-SP45XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B256L-SP45XIT requirements.

6.How does Aetrix verify that CY14B256L-SP45XIT is sourced from the original manufacturer or authorized distributors?

All CY14B256L-SP45XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B256L-SP45XIT meets industry standards.

7.What is the process for return or replacement of CY14B256L-SP45XIT?

All CY14B256L-SP45XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14B256L-SP45XIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14B256L-SP45XIT part is unused and in its original packaging.

Return procedure for CY14B256L-SP45XIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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