Infineon Technologies CY14B256Q2A-SXIT

Overview

CY14B256Q2A-SXIT from Infineon Technologies is a 256-Kbit (32 K × 8) non-volatile static RAM (nvSRAM) with parallel interface, integrated lithium battery backup, and automatic STORE/RECALL on power loss. It operates from 2.7 V to 3.6 V, features 15 ns access time, and retains data for 10 years without external power. It is used in industrial control systems requiring instant non-volatility during unexpected power interruption.

For engineers reviewing the CY14B256Q2A-SXIT datasheet, CY14B256Q2A-SXIT pinout, CY14B256Q2A-SXIT application, or CY14B256Q2A-SXIT equivalent, key selection criteria include guaranteed STORE/RECALL timing, battery-backed retention lifetime, parallel SRAM compatibility, and industrial temperature range support (–40°C to +85°C).

Technical Context

This nvSRAM integrates a standard asynchronous SRAM core with an on-chip controller that monitors V_CC and triggers automatic STORE (RAM → non-volatile element) when voltage drops below V_TRIP (2.5 V typical). RECALL occurs automatically on power-up when V_CC exceeds V_PU (2.7 V min).

The device uses ferroelectric capacitor-based non-volatile storage (not flash or EEPROM), enabling unlimited STORE/RECALL cycles (>1 million), zero write delay during normal operation, and no wear-out mechanism. It maintains full SRAM read/write timing throughout its operational life.

Key Specifications

Pinout & Package

Package: 44-pin TSOP-II (10.16 mm × 18.42 mm), JEDEC MO-141AC compliant, lead-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with CY14B256L-SPXC, CY14B256Q2A-SXIT offers superior power-fail response via dedicated V_CAP and hardware-triggered STORE, while FM24V10-G trades guaranteed atomicity for higher density and lower active current-making it suitable for different system-level trade-offs.

Availability

CY14B256Q2A-SXIT is available at Aetrix Electronics and suitable for industrial PLCs, smart meters, medical diagnostic equipment, and automotive body control modules requiring stable component supply and long-term lifecycle assurance.

Supply support for CY14B256Q2A-SXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, security solutions, and memory technologies, with global R&D and manufacturing infrastructure.

CY14B256Q2A-SXIT belongs to Infineon's nvSRAM product line, designed specifically for industrial and automotive applications demanding instantaneous, hardware-governed non-volatility without firmware intervention or endurance limits.

FAQ

What is the role of the V_CAP pin?

The V_CAP pin connects to an external 0.47 F supercapacitor or a lithium coin cell to provide energy for the STORE operation during power loss. It interfaces directly with the internal charge pump and voltage monitor, enabling autonomous STORE initiation without host processor involvement when V_CC drops below 2.5 V.

Does CY14B256Q2A-SXIT require initialization or configuration before use?

No initialization or configuration is required. The device behaves identically to a standard parallel SRAM upon power-up. STORE/RECALL is fully hardware-managed: RECALL occurs automatically at power-on when V_CC rises above 2.7 V, and STORE activates autonomously during power failure-no registers, commands, or firmware setup needed.

Can this part replace a standard SRAM in an existing design?

Yes-it is pin-compatible and timing-compatible with industry-standard 32K×8 parallel SRAMs (e.g., ISSI IS61LV25616AL). No PCB changes are needed beyond connecting V_CAP to a backup capacitor. Address, data, and control signals map identically; only the V_CAP connection is new.

How does its data retention compare to battery-backed SRAMs?

CY14B256Q2A-SXIT guarantees 10 years of data retention at +85°C using integrated ferroelectric storage-unlike battery-backed SRAMs, which degrade with temperature and age. There is no battery leakage, self-discharge, or end-of-life replacement requirement, making it more reliable for sealed or inaccessible deployments.