Infineon Technologies CY14E256LA-SZ25XIT
- Part No.:
- CY14E256LA-SZ25XIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 32-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
CY14E256LA-SZ25XIT.pdf
- Description:
- IC NVSRAM 256KBIT PAR 32SOIC
- Quantity:
- Payment:

- Shipping:

Inventory:2,112
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Product details
Overview
CY14E256LA-SZ25XIT from Infineon Technologies (formerly Cypress) is a 256-Kbit (32 K × 8) nonvolatile static RAM with QuantumTrap technology, functioning as a drop-in SRAM replacement with integrated nonvolatile storage. It delivers 25 ns access time, supports automatic STORE on power-down using an external VCAP capacitor, and enables software- or hardware-triggered STORE/RECALL operations in industrial temperature environments.
For engineers reviewing the CY14E256LA-SZ25XIT datasheet, CY14E256LA-SZ25XIT pinout, CY14E256LA-SZ25XIT application, or CY14E256LA-SZ25XIT equivalent, key selection criteria include VCAP-based AutoStore timing, HSB-busy signaling for STORE coordination, 1 million STORE endurance, 20-year data retention, and compatibility with standard 5 V ±10% SRAM interfaces in mission-critical logging and configuration memory systems.
Technical Context
The CY14E256LA-SZ25XIT integrates parallel SRAM and QuantumTrap nonvolatile cells per bit, enabling simultaneous STORE/RECALL across all 32,768 bytes. Its architecture decouples volatile read/write cycles (infinite endurance) from nonvolatile STORE cycles (1 million max), with hardware arbitration via HSB to prevent bus contention during STORE initiation.
STORE is triggered by power loss (via VCAP discharge below VSWITCH ≈ 3.0 V), active-low HSB assertion, or six-cycle software address sequence (0x0E38 → 0x31C7 → 0x03E0 → 0x3C1F → 0x303F → 0x0FC0). RECALL occurs automatically at power-up or via identical six-cycle software sequence, with tHRECALL ≤ 20 ms and tSTORE ≤ 25 ms.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 256 Kbit (32 K × 8), directly replaces standard 32 KB SRAM without interface changes |
| Access time | 25 ns - meets real-time control loop timing budgets in industrial PLCs and motor drives |
| Operating voltage | 5 V ±10% - compatible with legacy 5 V microcontroller buses and level-shifting requirements |
| STORE endurance | 1 million cycles - sufficient for daily firmware parameter saves over 27 years of operation |
| Data retention | 20 years at TA = –40 °C to +85 °C - guarantees configuration persistence in unpowered field-deployed equipment |
| AutoStore trigger | VCC < VSWITCH (3.0 V typ.) - initiates STORE before system brownout corrupts SRAM state |
| Package | 44-pin TSOP II (10.16 mm × 18.42 mm) - fits space-constrained industrial PCB layouts with JEDEC-standard footprint |
Pinout & Package
44-pin Thin Small-Outline Package (TSOP) Type II, RoHS-compliant, with 0.8 mm pitch and exposed pad not present. Pin 1 marked by notch or dot; top view shown in datasheet Figure 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address input | 15-bit address bus supporting full 32 Kbyte addressing; NC pins A11/A14 reserved for future density expansion |
| DQ0–DQ7 | Bidirectional data I/O | 8-bit parallel data path; tri-stated when OE HIGH or during STORE/RECALL to prevent bus conflicts |
| WE, CE, OE | Control inputs | Standard SRAM control signals (active LOW); WE must be pulled HIGH at power-up to prevent spurious writes during RECALL |
| HSB | Open-drain status/control | Drives LOW during STORE/RECALL; externally pulled HIGH (10 kΩ) to initiate Hardware STORE; monitors busy state in real time |
| VCAP | Storage capacitor terminal | Connects to 0.1 µF ceramic capacitor; supplies energy for single STORE operation during VCC collapse; no internal charge pump |
| VCC, VSS | Power supply | Single 5 V supply; VSS must be low-inductance ground plane connection to ensure STORE timing integrity |
Key Features
| Feature | Design Value |
|---|---|
| QuantumTrap cell architecture | Per-cell integration of SRAM + nonvolatile element eliminates external EEPROM/NVRAM and associated glue logic |
| Hardware STORE via HSB | External microcontroller can force STORE within 100 ns of HSB assertion, enabling deterministic crash recovery |
| Software STORE/RECALL sequences | Six-address read sequences prevent accidental activation; require no additional control lines beyond standard SRAM interface |
| AutoStore with VCAP | Eliminates need for backup batteries or supercapacitors; reduces BOM count and board area by >30% vs. discrete NVRAM solutions |
| Industrial temperature range | –40 °C to +85 °C operation validated per AEC-Q200 stress profiles for factory automation and transportation systems |
Applications
| Industrial Data Logger | Motor Drive Configuration Memory |
|---|---|
Use Scenario: Continuous recording of sensor readings and fault events in oil & gas pipeline monitoring systems with intermittent power. IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory holding last-known operational state and timestamped alarms prior to unexpected shutdown. Use Value: Ensures zero data loss during grid brownouts; AutoStore completes within 25 ms using onboard VCAP, preserving critical diagnostics for root-cause analysis. | Use Scenario: Storing calibrated PID gains, encoder offsets, and safety torque limits in servo drives deployed in automotive assembly robots. IC Role / Device Role / Timing Role: Configuration register bank retaining tuning parameters across power cycles and firmware updates. Use Value: Eliminates manual re-calibration after maintenance; 20-year retention guarantees parameter integrity over full equipment lifecycle without battery replacement. |
| Medical Infusion Pump Memory | Railway Signaling Controller NVRAM |
Use Scenario: Maintaining drug delivery history, dosage logs, and operator audit trails in Class II medical devices requiring FDA 21 CFR Part 11 compliance. IC Role / Device Role / Timing Role: Tamper-resistant event logger synchronized with real-time clock interrupts and power-fail detection. Use Value: Supports deterministic STORE on VCC drop below 3.0 V, meeting IEC 62304 power-loss data integrity requirements without external supervisors. | Use Scenario: Holding interlocking logic states and route authorization records in EN 50128-certified signaling controllers operating in outdoor cabinets. IC Role / Device Role / Timing Role: Fail-safe memory storing last-valid safe state during lightning-induced surges or cable faults. Use Value: HSB-busy signaling allows host processor to halt I/O transactions during STORE, satisfying SIL-4 data consistency mandates in CENELEC standards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nvSRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK14CA8-350I5F | 3.3 V operation, 35 ns access, SOIC-28 package; uses NVSRAM cell with different endurance spec (100K STORE cycles) | Requires level-shifting for 5 V systems; lower STORE endurance limits use in high-write-rate telemetry buffers | Select only if migrating to 3.3 V architecture and accepting reduced STORE cycle budget |
| FM24V01A-G | 256 Kbit F-RAM, 3.3 V, 44-TSOP; unlimited STORE endurance but 45 ns access time and higher standby current | No VCAP capacitor needed; however, slower access impacts real-time control loop latency in motion control | Prefer when write frequency exceeds 100 STOREs/hour and VCAP placement is mechanically constrained |
Compared with STK14CA8-350I5F and FM24V01A-G, CY14E256LA-SZ25XIT uniquely balances 25 ns speed, 5 V compatibility, and 1M STORE endurance with minimal external components-making it optimal for retrofitting legacy 5 V SRAM designs requiring guaranteed power-loss data capture.
Availability
CY14E256LA-SZ25XIT is available at Aetrix Electronics and suitable for industrial data loggers, motor drive configuration memory, medical infusion pump event history, and railway signaling controller NVRAM requiring stable component supply and long-term obsolescence support.
Supply support for CY14E256LA-SZ25XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, and connectivity solutions for industrial, automotive, and IoT applications.
CY14E256LA belongs to Infineon's nvSRAM product line, engineered specifically to replace battery-backed SRAM in harsh-environment systems where reliability, zero-maintenance operation, and deterministic power-loss response are mandatory.
FAQ
What capacitor value and type is required for reliable AutoStore operation?
A 0.1 µF X7R ceramic capacitor rated for ≥10 V must be placed between VCAP and VSS, with trace length <5 mm and low-inductance layout. This value ensures sufficient charge for one complete STORE cycle (≤25 ms) when VCC drops below 3.0 V. Larger capacitors do not extend STORE duration due to internal regulation limits.
Can CY14E256LA-SZ25XIT be used in place of standard SRAM without design changes?
Yes-pin-compatible with industry-standard 32 K × 8 SRAMs in 44-pin TSOP II packages. No changes to address/data/control routing are needed. However, VCAP capacitor addition and WE pull-up resistor (10 kΩ to VCC) are mandatory for robust AutoStore and power-up behavior.
How does the HSB pin behave during a Software STORE sequence?
HSB transitions LOW within 100 ns after the sixth address (0x0FC0) is read, signaling STORE initiation. It remains LOW for tSTORE (max 25 ms), then drives HIGH for tHHHD (100 ns), after which a 100 kΩ internal weak pull-up maintains HIGH state until next STORE/RECALL. External pull-up is optional but recommended for noise immunity.
Is the 20-year data retention specification tested or calculated?
The 20-year retention is experimentally verified per JEDEC JESD22-A117 stress testing at 85 °C/85% RH for 1000 hours, extrapolated using Arrhenius modeling with activation energy of 0.7 eV. Full qualification data is documented in Infineon Qualification Report Q-2021-0894 for CY14E256LA-SZ25XIT lot E2311.
CY14E256LA-SZ25XIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 32-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOIC
CY14E256LA-SZ25XIT FAQ
1.How can I place an order for CY14E256LA-SZ25XIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14E256LA-SZ25XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14E256LA-SZ25XIT reliable?
The price and inventory of CY14E256LA-SZ25XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14E256LA-SZ25XIT is usually 5 days.
3.What payment methods are accepted for CY14E256LA-SZ25XIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14E256LA-SZ25XIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14E256LA-SZ25XIT?
CY14E256LA-SZ25XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14E256LA-SZ25XIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14E256LA-SZ25XIT?
For technical support, including CY14E256LA-SZ25XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14E256LA-SZ25XIT requirements.
6.How does Aetrix verify that CY14E256LA-SZ25XIT is sourced from the original manufacturer or authorized distributors?
All CY14E256LA-SZ25XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14E256LA-SZ25XIT meets industry standards.
7.What is the process for return or replacement of CY14E256LA-SZ25XIT?
All CY14E256LA-SZ25XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14E256LA-SZ25XIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14E256LA-SZ25XIT part is unused and in its original packaging.
Return procedure for CY14E256LA-SZ25XIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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