Infineon Technologies CY14E256LA-SZ45XI

Overview

CY14E256LA-SZ45XI from Infineon Technologies (formerly Cypress) is a 256-Kbit (32 K × 8) nonvolatile static RAM with QuantumTrap technology, designed as a drop-in SRAM replacement requiring no firmware changes. It delivers 45 ns access time, single 5 V ±10% operation, and industrial temperature range (–40°C to +85°C), enabling reliable data retention during power loss in embedded controllers and industrial PLCs.

For engineers reviewing the CY14E256LA-SZ45XI datasheet, CY14E256LA-SZ45XI pinout, CY14E256LA-SZ45XI application, or CY14E256LA-SZ45XI equivalent, key selection criteria include AutoStore capacitor sizing (VCAP), HSB timing for hardware STORE acknowledgment, software STORE/RECALL address sequence compliance, and TSOP II vs. SOIC package compatibility with board layout constraints.

Technical Context

The CY14E256LA-SZ45XI integrates parallel SRAM and QuantumTrap nonvolatile storage per cell, enabling simultaneous STORE/RECALL across all 32,768 bytes. Its architecture supports three STORE initiation modes-AutoStore (power-down triggered), Hardware STORE (HSB pin assertion), and Software STORE (6-address read sequence)-with automatic inhibition of redundant STOREs unless SRAM writes occur since last STORE/RECALL.

RECALL is initiated on power-up or when VCC exceeds VSWITCH (4.25 V min), completing in tHRECALL ≤ 20 ms. During STORE or RECALL, SRAM access is inhibited, and HSB functions as both control input (active-low trigger) and open-drain status output (driven LOW during operation, weak 100 kΩ pull-up post-completion).

Key Specifications

Pinout & Package

Package: 44-pin Thin Small-Outline Package (TSOP II), 400 mil width, lead-free and RoHS compliant. Pin pitch: 0.8 mm. Mounting compatible with standard reflow profiles for industrial PCB assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with FM24V01A-G and MB85RS2MT-FPN-GE1, CY14E256LA-SZ45XI uniquely preserves 5 V parallel SRAM compatibility while delivering deterministic AutoStore without firmware dependency-critical for retrofitting legacy industrial hardware.

Availability

CY14E256LA-SZ45XI is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostic equipment, automotive body control units, and smart energy meters requiring stable component supply across extended product lifecycles.

Supply support for CY14E256LA-SZ45XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, and connectivity solutions for industrial, automotive, and IoT markets.

CY14E256LA belongs to Infineon's nvSRAM product line, engineered to replace battery-backed SRAM in mission-critical systems where maintenance-free, long-term data retention is mandatory under wide temperature and voltage stress.

FAQ

What capacitor value and type is required for reliable AutoStore operation?

A 0.1 µF X7R ceramic capacitor rated for ≥16 V must be placed between VCAP and VSS, as specified in the datasheet. Tantalum or electrolytic capacitors are not recommended due to higher ESR, which may cause AutoStore failure during rapid VCC collapse. The capacitor must be mounted within 5 mm of the VCAP pin to minimize inductance.

Can CY14E256LA-SZ45XI be used in place of a standard 32 K × 8 SRAM without design changes?

Yes-CY14E256LA-SZ45XI is pin-compatible and functionally identical to standard 5 V SRAMs during normal read/write operations. No firmware, timing, or bus interface modifications are needed. AutoStore and RECALL operate transparently in the background unless explicitly controlled via HSB or software sequence.

How does the device prevent unintended STORE operations during normal operation?

The CY14E256LA-SZ45XI implements a write-latch mechanism: AutoStore and Hardware STORE are ignored unless at least one SRAM write has occurred since the last STORE or RECALL cycle. This prevents spurious nonvolatile writes during idle periods while preserving deterministic behavior for software-initiated STOREs.

What happens if the VCAP capacitor is omitted or undersized?

Omitting or undersizing the VCAP capacitor causes AutoStore to fail during power loss, resulting in corrupted data in the nonvolatile array. The device attempts STORE but lacks sufficient energy to complete programming, leaving QuantumTrap cells in an undefined state. Datasheet mandates 0.1 µF minimum; derating to 0.15 µF is recommended for >10-year field reliability.