Infineon Technologies CY14E256L-SZ45XC

Overview

CY14E256L-SZ45XC from Cypress Semiconductor is a 256 Kbit (32K × 8) nonvolatile SRAM with QuantumTrap technology, operating at 45 ns access time, 5V ±10% supply, and supporting AutoStore on power loss using an external 68 µF capacitor. It performs STORE/RECALL between volatile SRAM and nonvolatile cells, enabling data retention for 100 years and 1M STORE cycles - used in industrial control logging and battery-free backup memory systems.

For engineers reviewing the CY14E256L-SZ45XC datasheet, CY14E256L-SZ45XC pinout, CY14E256L-SZ45XC application, or CY14E256L-SZ45XC equivalent, key selection criteria include AutoStore timing behavior, HSB-controlled hardware store latency, VCAP capacitor sizing requirements, and software STORE/RECALL address sequence compliance.

Technical Context

The CY14E256L-SZ45XC integrates parallel SRAM and QuantumTrap nonvolatile storage per cell, enabling simultaneous STORE/RECALL across all 32,768 bytes. Its architecture uses internal charge pump to drive VCAP to 5V and supports three STORE triggers: AutoStore (power-down), HSB-driven hardware store, and six-address software sequence.

It features dual-mode operation: normal SRAM mode with unlimited reads/writes, and nonvolatile mode with 1,000,000 STORE endurance and 100-year data retention. RECALL occurs automatically on power-up or via software, with tHRECALL = 10 ms and tRECALL = 15 ms, while STORE requires ≥10 ms and inhibits SRAM access during execution.

Key Specifications

Pinout & Package

Package: 32-pin SOIC (Small Outline Integrated Circuit), RoHS-compliant, 0.3-inch body width, standard JEDEC MS-012AC footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with STK14C88-45I, CY14E256L-SZ45XC adds HSB signaling and software STORE control, improving debuggability and deterministic store initiation; compared with FM24V02-G, it trades unlimited endurance for higher speed and proven 100-year retention, better suited for archival over frequent update scenarios.

Availability

CY14E256L-SZ45XC is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device parameter backup, and avionics black box buffer applications requiring stable component supply and long-term lifecycle support.

Supply support for CY14E256L-SZ45XC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor, now part of Infineon Technologies, designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY14E series targets applications needing deterministic, battery-free nonvolatile memory with SRAM-like performance - specifically engineered for systems where power loss events demand guaranteed data preservation without external energy storage.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14E256L-SZ45XC requires a minimum 68 µF capacitor rated at 6V with ±20% tolerance on the VCAP pin. Capacitance below this value risks incomplete STORE execution during rapid VCC collapse, resulting in partial or corrupted nonvolatile data save. The internal charge pump drives VCAP to 5V, and the capacitor must sustain ≥10 ms at ≥3.6V to complete the STORE cycle.

Can CY14E256L-SZ45XC operate without the VCAP capacitor?

Yes, but only in AutoStore Inhibit mode: tie VCC to ground and apply +5V directly to VCAP. In this configuration, AutoStore is disabled and STORE operations require explicit software or HSB initiation. Normal operation - including AutoStore on power loss - mandates the external 68 µF capacitor connected to VCAP per Figure 2 in the datasheet.

How does the CY14E256L-SZ45XC handle concurrent SRAM access during STORE initiation?

When HSB is pulled LOW or VCC drops below VSWITCH, the CY14E256L-SZ45XC completes any in-progress SRAM READ/WRITE cycle within tDELAY (≤100 ns), then inhibits further access until STORE completes. During STORE, DQ pins tri-state, and CE/WE/OE are ignored - ensuring atomic nonvolatile transfer without data corruption.

Is the software STORE address sequence case-sensitive or dependent on bus width?

No - the six-address software STORE sequence (0x0E38, 0x31C7, 0x03E0, 0x3C1F, 0x303F, 0x0FC0) is decoded internally as byte-aligned CE-controlled READs regardless of data bus width. Address bits A0–A14 must match exactly; OE state is irrelevant, and intervening WRITEs or address glitches abort the sequence. No case sensitivity applies - addresses are fixed hexadecimal values.