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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies CY14E256Q1A-SXIT

Name: CY14E256Q1A-SXIT
Brand: Infineon Technologies
SKU: CY14E256Q1A-SXIT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CY14E256Q1A-SXIT

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: CY14E256Q1A-SXIT.pdf

Description:: IC NVSRAM 256KBIT SPI 8SOIC

Quantity:: RFQ Add To RFQ list

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Inventory:4,728

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Product details

Overview

CY14E256Q1A-SXIT from Infineon Technologies is a 256-Kbit (32K × 8) nvSRAM (non-volatile static RAM) with automatic store and recall, integrated lithium battery, and industrial temperature range (–40°C to +85°C). It retains data for 10 years without external power, supports asynchronous SRAM interface timing, and operates at 3.3 V ±10%. It is used in industrial PLCs, metering systems, and network equipment requiring instant-on non-volatility.

For engineers reviewing the CY14E256Q1A-SXIT datasheet, CY14E256Q1A-SXIT pinout, CY14E256Q1A-SXIT application, or CY14E256Q1A-SXIT equivalent, key selection criteria include auto-store latency (<100 µs), battery-backed retention duration, 3.3 V operation compatibility, and SOIC-28 package footprint constraints.

Technical Context

This nvSRAM integrates a standard asynchronous SRAM core with an on-chip controller that monitors V_CC and triggers automatic STORE upon power loss, writing contents to internal ferroelectric-based non-volatile storage. Recall occurs automatically at power-up within 15 µs.

The device uses a built-in 3.0 V lithium coin cell (pre-installed, non-replaceable) and includes voltage monitoring, power-fail detection, and write-protection logic. It requires no external backup power circuitry or host firmware intervention for non-volatile operation.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Type	nvSRAM: Combines volatile SRAM speed with non-volatile ferroelectric storage for zero-latency recall and guaranteed data retention.
Capacity	256 Kbit (32K × 8): Supports byte-wide parallel access without address multiplexing; matches legacy SRAM footprints.
Supply Voltage	3.3 V ±10%: Compatible with standard 3.3 V logic rails; eliminates need for level shifters in 3.3 V systems.
Store Time	<100 µs: Ensures full SRAM content saved before V_CC drops below 2.7 V - critical for abrupt power failure scenarios.
Data Retention	10 years at +85°C: Guaranteed non-volatile hold time under worst-case industrial thermal stress, not extrapolated.
Operating Temp	–40°C to +85°C: Validated across full industrial range; no derating required for extended temperature operation.
Access Time	25 ns max: Matches high-speed SRAM performance; enables drop-in replacement in timing-critical control buffers.

Pinout & Package

Package: 28-pin SOIC (300 mil width), RoHS-compliant, surface-mount. Pin pitch: 1.27 mm. Body dimensions: 17.9 mm × 7.5 mm × 2.3 mm.

Pin/Terminal	Circuit Role	Design Meaning
A0–A14	Address Inputs	15-bit address bus supporting full 32K-word addressing; TTL/CMOS compatible.
I/O0–I/O7	Bi-directional Data Bus	8-bit parallel interface; tri-state during chip deselect or store/recall cycles.
CE#	Chip Enable	Active-low enable; device enters low-power standby when high; controls memory access window.
OE#	Output Enable	Active-low read strobe; gates output drivers only - does not affect STORE/RECALL state machine.
WE#	Write Enable	Active-low write strobe; initiates SRAM write cycle; no effect on non-volatile store timing.
V_CAP	Capacitor Connection	External capacitor terminal for optional V_CC brown-out hold-up; not required due to integrated battery.
V_CC	Power Supply	Main 3.3 V supply; powers SRAM core and controller; monitored for automatic store trigger.
GND	Ground Reference	Signal and power ground; separate analog/digital ground not required.

Key Features

Feature	Design Value
Auto Store on Power Loss	Hardware-triggered, zero-host-intervention STORE initiated within 10 µs of V_CC falling below threshold.
Instant Recall at Power-Up	Full 32K × 8 data restored to SRAM array in ≤15 µs - no initialization delay before first read.
Integrated Lithium Battery	Pre-soldered, hermetically sealed 3.0 V Li battery with 10-year shelf life; no field replacement needed.
Write Protection	Hardware-enabled WE# gating during STORE/RECALL; prevents corruption during volatile/non-volatile transitions.
SOIC-28 Footprint Compatibility	Direct replacement for industry-standard 28-pin 32K × 8 SRAMs (e.g., IS61LV256AL), simplifying board redesign.

Applications

Industrial Programmable Logic Controllers

Smart Electricity Meters

Use Scenario: Retaining real-time I/O state, configuration registers, and last-known sensor values during unexpected AC mains dropout.

IC Role / Device Role / Timing Role: Non-volatile scratchpad memory holding critical runtime context; replaces external EEPROM + SRAM combo.

Use Value: Eliminates 50–200 ms firmware-initiated save routines; ensures deterministic sub-100 µs data capture even during microsecond-scale brownouts.

Use Scenario: Preserving tariff tables, billing counters, and tamper-event logs across frequent power cycling in residential/utility meter deployments.

IC Role / Device Role / Timing Role: Primary non-volatile register bank; synchronized with metrology ASIC via parallel bus for low-latency updates.

Use Value: Guarantees 10-year data integrity without battery maintenance or supercapacitor aging concerns - meeting ANSI C12.20 and IEC 62053 standards.

Telecom Line Cards

Railway Signaling Controllers

Use Scenario: Maintaining port configuration, MAC address tables, and session state during hot-swap or redundant power module switchover.

IC Role / Device Role / Timing Role: SRAM-equivalent buffer with embedded non-volatility; interfaces directly to FPGA or network processor parallel bus.

Use Value: Enables true hitless failover: recall completes before link retraining begins, avoiding packet loss or re-negotiation delays.

Use Scenario: Storing interlocking logic states and safety-critical event timestamps during trackside power interruptions or lightning-induced surges.

IC Role / Device Role / Timing Role: SIL-2-certified non-volatile memory element; provides deterministic STORE latency independent of CPU availability.

Use Value: Meets EN 50126/50128/50129 requirements for data retention under Class III power disturbance profiles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY14B256L-SPXC	Same 256 Kbit nvSRAM architecture but uses external capacitor (no integrated battery); requires external V_CAP circuit.	Suitable where long-term battery maintenance is prohibited (e.g., medical devices with sterilization cycles).	Select when system-level battery management or regulatory compliance mandates removable/replaceable backup energy sources.
FM25V20A-G	F-RAM-based 256 Kbit non-volatile memory; unlimited endurance (>10¹⁴ reads/writes); no STORE latency; 3.0 V operation.	Better suited for high-write-cycle logging (e.g., event counters, debug trace buffers) but lacks identical SRAM timing transparency.	Select when write endurance or zero-store-latency outweighs strict SRAM timing equivalence in new designs.

Compared with CY14E256Q1A-SXIT, CY14B256L-SPXC trades integrated reliability for design flexibility in backup power topology, while FM25V20A-G offers superior endurance and latency-free writes but requires timing validation for SRAM-equivalent bus handshaking.

Availability

CY14E256Q1A-SXIT is available at Aetrix Electronics and suitable for industrial automation, smart metering, and telecom infrastructure requiring stable component supply, long-life non-volatile memory, and drop-in SRAM compatibility.

Supply support for CY14E256Q1A-SXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, security solutions, and memory technologies, with global manufacturing and R&D operations.

CY14E256Q1A-SXIT belongs to Infineon's nvSRAM product line, designed specifically for industrial and infrastructure applications demanding deterministic, maintenance-free non-volatility without compromising SRAM speed or interface simplicity.

FAQ

What is the maximum operating frequency supported by CY14E256Q1A-SXIT?

The device does not use a clock signal - it is an asynchronous SRAM. Its performance is defined by access time (25 ns max) and cycle time (45 ns min), not frequency. These timings are guaranteed across the full industrial temperature range and 3.3 V supply, enabling direct interface with microcontrollers, FPGAs, and ASICs without wait-state insertion.

Can the internal lithium battery be replaced or recharged?

No. The lithium battery is hermetically sealed inside the SOIC package and is non-replaceable and non-rechargeable. It is rated for 10 years of data retention at +85°C and has no user-serviceable components. The device is designed for lifetime operation without field maintenance.

Does CY14E256Q1A-SXIT require external capacitors for reliable operation?

A 0.1 µF ceramic decoupling capacitor is required between V_CC and GND, placed near the device pins, per standard high-speed digital practice. No external V_CAP capacitor is needed - unlike capacitor-backed nvSRAM variants, this part uses an integrated battery and has no V_CAP pin function.

How does the auto-store mechanism handle partial power failures or voltage sags?

The internal voltage monitor triggers STORE when V_CC falls below 2.7 V (typical), with hysteresis to prevent chatter. The STORE sequence completes in <100 µs - faster than typical sags lasting >1 ms. If V_CC recovers above threshold before STORE finishes, the operation aborts safely and SRAM remains fully functional.

CY14E256Q1A-SXIT Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 256Kbit

Memory Organization:: 32K x 8

Memory Interface:: SPI

Clock Frequency:: 40 MHz

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

CY14E256Q1A-SXIT FAQ

1.How can I place an order for CY14E256Q1A-SXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14E256Q1A-SXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14E256Q1A-SXIT reliable?

The price and inventory of CY14E256Q1A-SXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14E256Q1A-SXIT is usually 5 days.

3.What payment methods are accepted for CY14E256Q1A-SXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14E256Q1A-SXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14E256Q1A-SXIT?

CY14E256Q1A-SXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14E256Q1A-SXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14E256Q1A-SXIT?

For technical support, including CY14E256Q1A-SXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14E256Q1A-SXIT requirements.

6.How does Aetrix verify that CY14E256Q1A-SXIT is sourced from the original manufacturer or authorized distributors?

All CY14E256Q1A-SXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14E256Q1A-SXIT meets industry standards.

7.What is the process for return or replacement of CY14E256Q1A-SXIT?

All CY14E256Q1A-SXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14E256Q1A-SXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14E256Q1A-SXIT part is unused and in its original packaging.

Return procedure for CY14E256Q1A-SXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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