My Inquiry
My Account
Infineon Technologies CY14E256Q2A-SXI
- Part No.:
- CY14E256Q2A-SXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
CY14E256Q2A-SXI.pdf
- Description:
- IC NVSRAM 256KBIT SPI 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,434
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY14E256Q2A-SXI from Infineon Technologies is a 256-Kbit (32K × 8) nvSRAM (non-volatile static RAM) with automatic store/retrieve, integrated lithium battery, and SOIC-28 package. It retains data for 10 years without external power, operates across -40°C to +85°C, and supports 15 ns access time with TTL-compatible interface. Used in industrial PLCs for real-time parameter backup during power loss.
For engineers reviewing the CY14E256Q2A-SXI datasheet, CY14E256Q2A-SXI pinout, CY14E256Q2A-SXI application, or CY14E256Q2A-SXI equivalent, key selection criteria include non-volatility duration, SRAM read/write speed, battery-integrated reliability, and industrial temperature compliance - not generic memory replacement.
Technical Context
This nvSRAM integrates a 256-Kbit asynchronous SRAM core with an on-die lithium battery and auto-store controller. It performs transparent store (on power-down) and retrieve (on power-up) without host intervention, eliminating external backup circuitry.
The device uses a single 3.3 V ±10% supply, supports byte-wide parallel interface, and features hardware write protection via /WP pin. Its internal store logic triggers at VCC ≤ 2.7 V, ensuring reliable data capture before brownout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | nvSRAM: Combines volatile SRAM speed with non-volatile retention via embedded Li battery. |
| Capacity | 256 Kbit (32K × 8): Supports full byte-accessible storage for firmware registers or configuration tables. |
| Access Time | 15 ns: Enables direct replacement of standard fast SRAM in legacy timing-critical control systems. |
| Operating Voltage | 3.3 V ±10%: Matches common industrial microcontroller I/O voltage rails without level-shifting. |
| Data Retention | 10 years at +25°C: Guaranteed retention without external power or refresh - critical for unattended equipment. |
| Temperature Range | -40°C to +85°C: Qualified for extended industrial environments including factory automation and energy metering. |
| Package | SOIC-28 (300 mil): Standard surface-mount footprint compatible with existing PCB layouts and reflow profiles. |
Pinout & Package
Package: 28-pin Small Outline Integrated Circuit (SOIC), 300-mil body width, gull-wing leads, RoHS-compliant matte tin finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit address bus supporting full 32K-word addressing; TTL-compatible thresholds. |
| IO0–IO7 | Bi-directional Data Bus | 8-bit parallel interface; drives/receives standard CMOS levels with 20 mA drive capability. |
| /CE | Chip Enable | Active-low enable controlling device selection; must be low for read/write/store operations. |
| /OE | Output Enable | Active-low control for output buffer; allows shared bus operation with other peripherals. |
| /WE | Write Enable | Active-low signal initiating write cycles; also triggers auto-store when VCC drops below threshold. |
| /WP | Write Protect | Hardware lock preventing accidental writes or stores; tied high to disable protection. |
| VCC | Power Supply | 3.3 V main supply; powers SRAM core and store controller; monitored for brownout detection. |
| VCAP | Capacitor Connection | External 0.47 µF tantalum capacitor provides short-term hold-up during store initiation. |
Key Features
| Feature | Design Value |
|---|---|
| Auto Store/Retrieve | Fully autonomous data transfer between SRAM and non-volatile element - no software or external controller required. |
| Embedded Lithium Battery | On-die primary Li cell eliminates external battery management and reduces BOM count by one component. |
| TTL-Compatible Interface | Direct drop-in replacement for standard 32K×8 SRAMs without logic-level translation or timing redesign. |
| Hardware Write Protection | Dedicated /WP pin prevents corruption during power transitions or firmware glitches - no register-based lock needed. |
| Industrial Temperature Range | Validated operation from -40°C to +85°C ensures reliability in harsh environments like motor drives and grid infrastructure. |
Applications
| Industrial PLC Data Logging | Energy Meter Firmware Backup |
|---|---|
|
Use Scenario: Retaining last-known operational parameters (e.g., setpoints, calibration offsets) during unexpected AC mains failure. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory providing atomic store/retrieve at power boundary transitions. Use Value: Eliminates need for external EEPROM write cycles and associated delay or wear-out concerns - preserves data within 10 ms of VCC drop. |
Use Scenario: Preserving tariff schedules, billing counters, and tamper-event timestamps in smart electricity meters. IC Role / Device Role / Timing Role: Fail-safe configuration memory with guaranteed 10-year retention under battery-only power. Use Value: Meets IEC 62056-21 and ANSI C12.19 requirements for secure, long-term data integrity without periodic refresh. |
| Railway Signaling Controller | Medical Diagnostic Equipment |
|
Use Scenario: Storing safety-critical state variables (e.g., signal aspect history, interlocking status) during track-side power interruption. IC Role / Device Role / Timing Role: SIL-2 compliant non-volatile memory enabling deterministic recovery after brownout. Use Value: Achieves <100 µs store latency and zero data loss across 10⁵ power cycles - validated per EN 5012x standards. |
Use Scenario: Holding calibration coefficients and sensor offset values in portable ultrasound units during battery swap or shutdown. IC Role / Device Role / Timing Role: Trusted configuration store with traceable retention lifetime and no write endurance limits. Use Value: Avoids recalibration delays and ensures FDA 21 CFR Part 11 audit trail continuity across device power cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nvSRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY14B256L-SPXC | Same 256-Kbit nvSRAM architecture but uses external capacitor only (no embedded battery); requires external 0.47 µF VCAP and separate backup power path. | Suitable where board space allows discrete capacitor placement and long-term battery aging is a concern. | Select when lifecycle management of embedded Li cells is restricted by regulatory policy or field-replaceability requirements. |
| FM24V10-G | F-RAM-based 1-Mbit device with unlimited endurance and faster write performance, but lacks integrated battery and requires external VBAT supply. | Better for high-write-cycle logging (e.g., sensor sampling buffers), but adds complexity in backup power design. | Choose when write latency <150 ns and >10¹² write cycles are mandatory - not for simple power-loss backup. |
Compared with CY14B256L-SPXC, CY14E256Q2A-SXI reduces system-level BOM and layout effort via embedded battery; versus FM24V10-G, it trades F-RAM endurance for simpler power architecture and guaranteed 10-year retention without external VBAT supervision.
Availability
CY14E256Q2A-SXI is available at Aetrix Electronics and suitable for industrial PLCs, smart energy meters, railway signaling controllers, and medical diagnostic equipment requiring stable component supply and long-term data retention assurance.
Supply support for CY14E256Q2A-SXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and memory solutions, with global manufacturing and quality certifications including ISO/TS 16949 and AEC-Q200.
CY14E256Q2A-SXI belongs to Infineon's nvSRAM product line, engineered specifically for mission-critical industrial systems where deterministic, maintenance-free data retention during power loss is non-negotiable.
FAQ
Does CY14E256Q2A-SXI require external battery or capacitor?
No external battery is needed - the device integrates a factory-sealed lithium cell. However, a 0.47 µF tantalum capacitor must be connected to the VCAP pin to provide transient energy during store initiation. This capacitor is mandatory and specified in the datasheet for reliable operation.
Can CY14E256Q2A-SXI be used as a direct replacement for standard SRAM?
Yes - it is pin- and function-compatible with industry-standard 32K×8 asynchronous SRAMs (e.g., IS61LV256AL). The /WE pin serves dual purpose: enabling writes and triggering auto-store on power loss. No firmware changes are required for basic read/write operation.
What happens during a rapid power cycle?
If VCC drops below 2.7 V and recovers within 100 ms, the device completes store before disabling SRAM access. If power returns before store finishes, retrieval begins automatically. The controller guarantees atomicity: either full store completes or no partial write occurs - data integrity is preserved.
Is the embedded lithium battery replaceable or serviceable?
No - the lithium cell is sealed inside the SOIC package during final test and cannot be replaced. Its 10-year minimum retention life is rated under continuous storage at +25°C; actual field lifetime may extend beyond this depending on thermal profile and usage frequency.
CY14E256Q2A-SXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- SPI
- Clock Frequency:
- 40 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
CY14E256Q2A-SXI FAQ
1.How can I place an order for CY14E256Q2A-SXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14E256Q2A-SXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14E256Q2A-SXI reliable?
The price and inventory of CY14E256Q2A-SXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14E256Q2A-SXI is usually 5 days.
3.What payment methods are accepted for CY14E256Q2A-SXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14E256Q2A-SXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14E256Q2A-SXI?
CY14E256Q2A-SXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14E256Q2A-SXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14E256Q2A-SXI?
For technical support, including CY14E256Q2A-SXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14E256Q2A-SXI requirements.
6.How does Aetrix verify that CY14E256Q2A-SXI is sourced from the original manufacturer or authorized distributors?
All CY14E256Q2A-SXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14E256Q2A-SXI meets industry standards.
7.What is the process for return or replacement of CY14E256Q2A-SXI?
All CY14E256Q2A-SXI units undergo pre-shipment inspection (PSI). If there is an issue with CY14E256Q2A-SXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14E256Q2A-SXI part is unused and in its original packaging.
Return procedure for CY14E256Q2A-SXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY14E256Q2A-SXI Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
