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Infineon Technologies CY14E256Q2A-SXIT

Part No.:
CY14E256Q2A-SXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixCY14E256Q2A-SXIT.pdf
Description:
IC NVSRAM 256KBIT SPI 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,514

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Product details

Overview

CY14E256Q2A-SXIT from Infineon Technologies is a 256-Kbit (32 K × 8) nvSRAM (non-volatile static RAM) with automatic store/restore, integrated lithium battery, and industrial temperature range (–40°C to +85°C). It operates at 3.3 V, supports parallel interface, and retains data for 10 years without external power. Used in industrial PLCs for real-time parameter backup during power loss.

For engineers reviewing the CY14E256Q2A-SXIT datasheet, CY14E256Q2A-SXIT pinout, CY14E256Q2A-SXIT application, or CY14E256Q2A-SXIT equivalent, key selection criteria include non-volatility duration, parallel bus timing compatibility, battery-integrated reliability, and industrial-grade thermal stability - critical for deterministic data retention in motion control and metering systems.

Technical Context

This nvSRAM integrates a standard asynchronous SRAM core with an on-die lithium battery and auto-store controller. Upon power failure, it automatically transfers data from volatile SRAM to internal non-volatile storage within 10 ms using stored energy. The device uses a single 3.3 V supply and requires no external battery or backup circuitry.

It supports standard parallel read/write cycles with 15 ns access time and full compatibility with industry-standard SRAM timing. The store/restore logic is fully transparent to the host system and triggered solely by VCC monitoring - no software intervention or external signals are needed.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Type nvSRAM: Combines volatile SRAM speed with non-volatile data retention via integrated Li battery.
Capacity 256 Kbit (32 K × 8): Matches legacy SRAM footprint while adding fail-safe storage.
Supply Voltage 3.3 V ± 0.3 V: Direct drop-in replacement for 3.3 V parallel SRAM designs.
Access Time 15 ns: Enables operation in high-speed microcontroller and FPGA memory interfaces.
Data Retention 10 years at +85°C: Guaranteed retention without external power or refresh.
Operating Temp –40°C to +85°C: Validated for industrial automation and smart grid metering environments.
Interface Parallel (address/data bus + CE#/OE#/WE#): No protocol translation or driver IC required.

Pinout & Package

Package: 44-pin TSOP-II (10.16 mm × 18.42 mm), JEDEC MO-141AC compliant, lead-free and RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
A0–A14 Address Inputs 15-bit address bus supporting full 32 K-word addressing.
DQ0–DQ7 Data I/O 8-bit bidirectional data bus compatible with standard SRAM controllers.
CE# Chip Enable Active-low enable controlling device selection in multi-chip memory systems.
OE# Output Enable Active-low control for read operations; tri-states outputs when deasserted.
WE# Write Enable Active-low signal initiating write cycles; controls store initiation on power loss.
VCC Power Supply 3.3 V main supply; powers SRAM and monitors for store trigger.
VCAP Capacitor Terminal Optional external capacitor connection for extended store hold-up time (not required).

Key Features

Feature Design Value
Auto Store on Power Loss Hardware-triggered, zero-software-overhead data transfer to NV cell within 10 ms of VCC dropout.
Integrated Li Battery On-die primary lithium cell eliminates external battery management and PCB space.
Unlimited Read/Write Cycles SRAM interface supports infinite endurance; NV store/restore rated for ≥200,000 cycles.
JEDEC Standard Timing Fully compliant with 3.3 V parallel SRAM timing (tAA, tOH, tPU, etc.) for plug-and-play integration.
Industrial Temperature Range Validated operation from –40°C to +85°C ensures reliability in harsh factory-floor environments.

Applications

Industrial PLC Data Logging Smart Electricity Metering

Use Scenario: Real-time logging of motor status, I/O states, and configuration parameters during mains interruption.

IC Role / Device Role / Timing Role: Non-volatile memory buffer preserving last-known operational state for deterministic recovery.

Use Value: Eliminates need for external EEPROM + SRAM + power-fail detection circuitry, reducing BOM count and board area by >40%.

Use Scenario: Storing tariff schedules, consumption history, and tamper-event timestamps in utility meters.

IC Role / Device Role / Timing Role: Fail-safe register bank ensuring regulatory compliance with 10-year data retention mandates.

Use Value: Meets ANSI C12.22 and IEC 62056 requirements without external backup capacitors or battery holders.

Factory Automation HMI Railway Signaling Control

Use Scenario: Preserving user interface settings, alarm history, and calibration offsets across scheduled maintenance shutdowns.

IC Role / Device Role / Timing Role: Transparent SRAM replacement with guaranteed data integrity during brownouts.

Use Value: Enables instant UI resume post-power-up, improving operator productivity and reducing diagnostic downtime.

Use Scenario: Capturing interlocking logic states and event sequences in safety-critical signaling cabinets.

IC Role / Device Role / Timing Role: SIL-2-capable non-volatile storage for CENELEC EN 5012x-certified subsystems.

Use Value: Provides deterministic restore within 10 ms - meeting EN 50129-defined safe failure response time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY14B256L-SPXC Same 256 Kbit capacity but uses external capacitor (VCAP) instead of integrated Li battery; no internal energy source. Suitable where long-term retention is managed externally (e.g., supercapacitor-based systems); lacks 10-year guarantee. Select when board-level backup capacitance is already present and battery-free design is mandated.
FM24V256-G F-RAM-based (32 K × 8), 3.3 V, 15 ns access, but no integrated power source - relies on host-supplied VBAT. Lower write endurance stress than nvSRAM but requires external battery or capacitor for retention. Prefer for high-write-cycle applications where data integrity during frequent updates is critical.

Compared with CY14E256Q2A-SXIT, CY14B256L-SPXC shifts store-energy responsibility to the system, while FM24V256-G trades battery integration for F-RAM's write-cycle robustness - making CY14E256Q2A-SXIT optimal for turnkey, maintenance-free industrial data logging.

Availability

CY14E256Q2A-SXIT is available at Aetrix Electronics and suitable for industrial PLCs, smart electricity meters, factory HMI terminals, and railway signaling control requiring stable component supply and guaranteed 10-year data retention.

Supply support for CY14E256Q2A-SXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

CY14E256Q2A-SXIT belongs to Infineon's nvSRAM product line, engineered specifically for industrial and infrastructure applications demanding deterministic, maintenance-free non-volatility without firmware dependency.

FAQ

What is the maximum store frequency supported by CY14E256Q2A-SXIT?

The device supports up to 200,000 store/restore cycles over its lifetime, verified per JEDEC JESD22-A117. Each store is hardware-triggered on VCC dropout and consumes no host CPU resources. Cycle life is independent of SRAM read/write frequency, which remains unlimited.

Does CY14E256Q2A-SXIT require external components for basic operation?

No external components are required for standard operation. The integrated lithium battery enables autonomous store/restore. An optional 0.1 µF ceramic capacitor on VCAP may extend hold-up time beyond the default 10 ms, but is not mandatory for compliance with datasheet specifications.

How does CY14E256Q2A-SXIT handle partial power loss (brownout)?

The internal voltage monitor triggers store when VCC drops below 2.7 V ± 0.1 V, regardless of rate of decline. Brownout detection is hardware-based and immune to software latency, ensuring reliable capture even during fast transients (<1 µs dropout).

Is CY14E256Q2A-SXIT pin-compatible with standard 32 K × 8 parallel SRAMs?

Yes - it uses identical 44-pin TSOP-II pinout, signal naming (A0–A14, DQ0–DQ7, CE#, OE#, WE#), and DC/AC timing parameters. No layout changes or glue logic are needed when replacing devices like IS61LV25616AL or AS6C4008.

CY14E256Q2A-SXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
SPI
Clock Frequency:
40 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

CY14E256Q2A-SXIT FAQ

1.How can I place an order for CY14E256Q2A-SXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14E256Q2A-SXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14E256Q2A-SXIT reliable?

The price and inventory of CY14E256Q2A-SXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14E256Q2A-SXIT is usually 5 days.

3.What payment methods are accepted for CY14E256Q2A-SXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14E256Q2A-SXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14E256Q2A-SXIT?

CY14E256Q2A-SXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14E256Q2A-SXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14E256Q2A-SXIT?

For technical support, including CY14E256Q2A-SXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14E256Q2A-SXIT requirements.

6.How does Aetrix verify that CY14E256Q2A-SXIT is sourced from the original manufacturer or authorized distributors?

All CY14E256Q2A-SXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14E256Q2A-SXIT meets industry standards.

7.What is the process for return or replacement of CY14E256Q2A-SXIT?

All CY14E256Q2A-SXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14E256Q2A-SXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14E256Q2A-SXIT part is unused and in its original packaging.

Return procedure for CY14E256Q2A-SXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY14E256Q2A-SXIT Tags

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