Infineon Technologies CY14MB064Q2A-SXIT

Overview

CY14MB064Q2A-SXIT from Infineon Technologies is a 64-Mbit (8 MB) non-volatile static RAM (nvSRAM) with parallel interface, 3.3 V supply, and industrial temperature range (–40°C to +85°C). It integrates a lithium battery for automatic data retention during power loss and supports SRAM-compatible read/write timing without external backup circuitry. Used in industrial control PLCs, network routers, and metering systems requiring instant-on, zero-write-cycle data persistence.

For engineers reviewing the CY14MB064Q2A-SXIT datasheet, CY14MB064Q2A-SXIT pinout, CY14MB064Q2A-SXIT application, or CY14MB064Q2A-SXIT equivalent, this device delivers deterministic non-volatility with no delay on power-up, eliminates EEPROM wear-out concerns, and maintains full SRAM speed (15/20 ns access) while preserving data for >10 years without external power.

Technical Context

The CY14MB064Q2A-SXIT implements an integrated nvSRAM architecture combining standard asynchronous SRAM cells with on-die non-volatile storage via ferroelectric capacitor-assisted store/retrieve logic. It uses a single V_CC supply (3.0–3.6 V) and requires no external voltage supervisor or backup controller.

Store operation is triggered automatically on V_CC drop below V_POR (~2.7 V), completing within 10 µs using internal charge pump and capacitor energy. Retrieve occurs transparently at power-up before first valid address access, with no software intervention or latency penalty to user reads.

Key Specifications

Pinout & Package

Package: 48-pin TSOP-II (12 mm × 20 mm, 0.5 mm pitch), RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with CY14B108M2A-BAI, the CY14MB064Q2A-SXIT offers superior thermal robustness and integrated V_CAP simplification; versus FM22L16-55-TG, it provides 4× capacity and 10-year retention at 85°C-critical for firmware and regulatory data archiving.

Availability

CY14MB064Q2A-SXIT is available at Aetrix Electronics and suitable for industrial PLCs, telecom routers, smart electricity meters, and medical diagnostic equipment requiring stable component supply with guaranteed 10-year data retention and zero-power-loss data integrity.

Supply support for CY14MB064Q2A-SXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, security solutions, and memory technologies, with global R&D and manufacturing infrastructure.

This part belongs to Infineon's nvSRAM product line, engineered specifically for mission-critical industrial and infrastructure applications where data persistence must survive unpredictable power failures without firmware overhead or external components.

FAQ

What happens during a rapid power interruption lasting less than 10 µs?

The CY14MB064Q2A-SXIT monitors V_CC continuously; if voltage drops below 2.7 V for ≥100 ns, the store sequence initiates. Interruptions shorter than the detection threshold do not trigger store, preserving SRAM functionality and avoiding false triggers from transient noise.

Can the device operate without an external V_CAP capacitor?

No. The V_CAP pin must be connected to a minimum 0.47 F tantalum capacitor (rated ≥5.5 V) to supply energy for the store operation. Omitting it disables non-volatility - the device functions only as volatile SRAM with no data retention on power loss.

Is software intervention required to initiate store or retrieve operations?

No. Store is fully hardware-triggered on V_CC dropout; retrieve occurs automatically before the first valid read access at power-up. No register writes, commands, or polling are needed - behavior is transparent to the host processor.

Does the device support partial-store or selective-store modes?

No. Store always saves the entire 8 MB SRAM array. There is no provision for selective or byte-addressable store; the architecture treats the memory as a single atomic non-volatile unit to ensure data consistency and eliminate software complexity.