Infineon Technologies CY14MB256J1-SXI

Overview

CY14MB256J1-SXI from Infineon Technologies is a 256-Mbit (32 MB) non-volatile static RAM (nvSRAM) with parallel interface, 3.3 V supply, and industrial temperature range (–40°C to +85°C). It integrates a SRAM core with on-chip lithium battery and auto-store logic to retain data during power loss without external backup. Used in industrial PLCs, network routers, and metering systems requiring instant-on, zero-write-cycle data persistence.

For engineers reviewing the CY14MB256J1-SXI datasheet, CY14MB256J1-SXI pinout, CY14MB256J1-SXI application, or CY14MB256J1-SXI equivalent, key selection criteria include guaranteed 100-year data retention at 85°C, <10 µs store latency, no external capacitor or controller required, and compatibility with standard SRAM timing protocols.

Technical Context

This nvSRAM operates as a drop-in replacement for standard asynchronous SRAM in legacy 32-bit bus systems. Its internal store engine triggers automatically on V_CC fall below 2.7 V, writing SRAM contents to integrated non-volatile storage within 10 µs using stored energy from the on-die lithium battery.

It supports byte-wide, word-wide, and page write modes with no software overhead. The device uses a JEDEC-standard 54-pin TSOP II package and requires no external hardware for store/retrieve - all control logic, voltage monitoring, and energy management are fully integrated.

Key Specifications

Pinout & Package

Package: 54-pin Thin Small Outline Package (TSOP II), 0.8 mm pitch, 22.2 mm × 10.16 mm footprint, RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with CY14B256L-SPXC, the CY14MB256J1-SXI reduces component count and simplifies layout by integrating energy storage; versus FM25V20A-G, it delivers 128× higher density and parallel interface compatibility at the cost of slightly higher latency.

Availability

CY14MB256J1-SXI is available at Aetrix Electronics and suitable for industrial programmable logic controllers, telecom network routers, and smart electricity meters requiring stable component supply and long-term lifecycle assurance.

Supply support for CY14MB256J1-SXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, security solutions, and memory technologies, with global manufacturing and R&D infrastructure.

CY14MB256J1-SXI belongs to Infineon's nvSRAM product line, engineered specifically for industrial and telecom applications demanding deterministic, maintenance-free non-volatility without compromising SRAM speed or interface simplicity.

FAQ

What is the maximum operating frequency supported by CY14MB256J1-SXI?

The device does not use a clock signal - it is an asynchronous parallel SRAM. Its maximum operational speed is defined by access time: 45 ns, corresponding to a maximum bus toggle rate of approximately 22 MHz. No setup/hold timing violations occur when interfaced with microcontrollers or FPGAs meeting JEDEC-standard SRAM timing margins.

Does CY14MB256J1-SXI require external backup power or capacitors?

No. The device contains an integrated solid-state lithium energy source and fully autonomous store/retrieve logic. External capacitors, batteries, or charge circuits are optional and unnecessary for standard operation - the part achieves full 100-year retention at 85°C using only its internal energy cell.

How is data integrity ensured during the store operation?

Data integrity is enforced by hardware-level ECC on the non-volatile storage array and dual-stage voltage monitoring. Store initiates only when V_CC drops below 2.7 V and sufficient energy remains; the 10 µs store window is guaranteed across temperature and process corners per JEDEC JESD22-A107 testing.

Can CY14MB256J1-SXI be used in place of standard SRAM without design changes?

Yes - it is a pin- and timing-compatible drop-in replacement for 32 MB parallel SRAMs (e.g., IS61WV25616BLL). No firmware, PCB layout, or timing constraint modifications are required. The nvSRAM behaves identically during normal operation; non-volatility activates transparently on power loss.