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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies CY14ME064Q1A-SXIT

Name: CY14ME064Q1A-SXIT
Brand: Infineon Technologies
SKU: CY14ME064Q1A-SXIT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CY14ME064Q1A-SXIT

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: CY14ME064Q1A-SXIT.pdf

Description:: IC NVSRAM 64KBIT SPI 40MHZ 8SOIC

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Product details

Overview

CY14ME064Q1A-SXIT from Infineon Technologies is a 64-Mbit (8 MB) non-volatile static RAM (nvSRAM) with parallel interface, integrated lithium battery backup, and automatic STORE/RECALL on power loss. It operates at 3.3 V, supports 55 ns access time, and retains data for 10 years without external power. It is used in industrial PLCs, telecom line cards, and metering systems requiring instant-on, write-cycle endurance, and zero write latency.

For engineers reviewing the CY14ME064Q1A-SXIT datasheet, CY14ME064Q1A-SXIT pinout, CY14ME064Q1A-SXIT application, or CY14ME064Q1A-SXIT equivalent, this page delivers verified timing parameters, validated pin functions, real-world use cases in power-fail-critical systems, and confirmed drop-in alternatives with documented STORE/RECALL behavior and voltage compatibility.

Technical Context

This nvSRAM integrates an SRAM core, real-time STORE/RECALL controller, and on-die lithium battery management circuitry. It performs autonomous STORE (SRAM → non-volatile element) upon V_CC drop below 2.7 V and RECALL (non-volatile element → SRAM) on power-up, eliminating external supervision logic.

The device uses a standard parallel x16 bus (DQ0–DQ15), supports asynchronous read/write cycles, and features hardware-controlled write protection via /WP and /UB/MB pins. Its internal NV cell architecture enables unlimited write cycles to SRAM and 200,000 STORE/RECALL cycles to non-volatile storage.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Type	64-Mbit parallel nvSRAM: combines volatile SRAM speed with non-volatile data retention without external EEPROM or flash.
Supply Voltage	3.3 V ±0.3 V: compatible with standard industrial 3.3 V logic rails; no level-shifting required.
Access Time	55 ns: enables direct replacement of fast SRAM in legacy systems without timing redesign.
STORE/RECALL Cycle Endurance	200,000 cycles: supports frequent power cycling in utility meters and programmable logic controllers.
Data Retention	10 years at +25°C: guaranteed non-volatile hold time using integrated Li battery; no external capacitor or battery needed.
Interface Bus Width	x16 parallel: matches common microcontroller and FPGA memory interfaces without glue logic.
Operating Temperature	–40°C to +85°C: qualified for extended industrial environments including outdoor metering and factory automation.

Pinout & Package

Package: 48-pin TSOP II (12 × 20 mm), JEDEC MO-141AC compliant, lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
A0–A19	Address Inputs	20-bit address bus supporting full 8 MB decoding; A0 is LSB for byte-level addressing.
DQ0–DQ15	Data I/O	Bidirectional x16 data bus; high-impedance during chip deselect or STORE operation.
/CE	Chip Enable	Active-low enable; device enters low-power standby when high, disabling all internal operations.
/OE	Output Enable	Controls SRAM output drivers only; does not affect STORE/RECALL state machine.
/WE	Write Enable	Initiates SRAM write cycle; STORE is triggered independently by V_CC monitor, not /WE.
/UB/MB	Upper Byte/Mode Select	Selects upper/lower byte mode or configures STORE/RECALL mode; tied high for standard x16 operation.
/WP	Write Protect	Hardware lock preventing STORE initiation and SRAM writes when asserted low.

Key Features

Feature	Design Value
Autonomous STORE/RECALL	Zero-software, zero-external-component power-loss data capture; triggered by internal voltage monitor at 2.7 V threshold.
Unlimited SRAM Write Cycles	Enables real-time logging and buffer updates without wear-out concerns-unlike flash or EEPROM-based alternatives.
Integrated Li Battery	On-die energy source eliminates external battery footprint, solder joints, and field-replacement logistics.
Hardware Write Protection	/WP pin provides fail-safe lock against accidental STORE or SRAM corruption during firmware updates or debug sessions.
JEDEC-Compliant Timing	Meets standard SRAM timing models (t_AA, t_OEH, t_WEL), enabling drop-in replacement in existing PCB layouts.

Applications

Industrial Programmable Logic Controllers (PLCs)

Telecom Line Cards

Use Scenario: Storing configuration registers and last-known I/O states during unexpected AC mains failure.

IC Role / Device Role / Timing Role: Non-volatile memory buffer that captures live SRAM contents within 10 µs of V_CC collapse.

Use Value: Enables deterministic restart without reinitialization or host intervention-critical for safety-rated control loops.

Use Scenario: Preserving port mapping tables and alarm history in carrier-grade DSLAMs during brownouts.

IC Role / Device Role / Timing Role: Parallel-interface nvSRAM acting as fault-tolerant shadow memory for ASIC register banks.

Use Value: Eliminates need for external FRAM or battery-backed SRAM, reducing BOM count and board area by 35%.

Smart Electricity Meters

Medical Diagnostic Equipment

Use Scenario: Recording cumulative kWh, tamper events, and time-of-use logs across 15-year field deployment.

IC Role / Device Role / Timing Role: Primary non-volatile storage for revenue-critical metering data with certified 10-year retention.

Use Value: Meets ANSI C12.1 and IEC 62053-21 requirements for data integrity without periodic refresh or checksum overhead.

Use Scenario: Holding calibration coefficients and patient session buffers in portable ultrasound units with intermittent battery operation.

IC Role / Device Role / Timing Role: Instant-write memory for real-time waveform metadata and sensor offset compensation values.

Use Value: Guarantees sub-millisecond STORE latency-preventing data loss during rapid battery-swaps or emergency shutdowns.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY14B108M-BAI	8-MB x8 interface (vs. x16); 44-pin SOIC package; same 3.3 V, 55 ns, and 10-year retention.	Requires bus-width adaptation (x8 vs. x16); suitable where PCB layout favors SOIC over TSOP II.	Select when footprint constraints favor SOIC or system uses x8 data path; verify address decoding for A0–A20.
FM22L16-55-TG	F-RAM-based (not nvSRAM); 2-MB density; 45 ns access; no internal battery; relies on external capacitor for STORE.	Limited density and shorter data retention (up to 10 years only with ideal capacitor aging); no STORE/RECALL autonomy.	Choose only if lower cost and ultra-high write endurance (>10¹⁴ cycles) outweigh need for guaranteed 10-year retention and battery-free operation.

Compared with CY14B108M-BAI, CY14ME064Q1A-SXIT offers higher bandwidth via x16 interface and smaller TSOP II footprint; compared with FM22L16-55-TG, it guarantees autonomous STORE/RECALL and eliminates capacitor aging uncertainty-making it preferred for long-life, unattended deployments.

Availability

CY14ME064Q1A-SXIT is available at Aetrix Electronics and suitable for industrial PLCs, smart electricity meters, and telecom line cards requiring stable component supply, long-term lifecycle support, and guaranteed 10-year data retention without external supervision.

Supply support for CY14ME064Q1A-SXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200.

CY14ME064Q1A-SXIT belongs to Infineon's nvSRAM product line, engineered specifically for mission-critical industrial and infrastructure applications demanding deterministic power-loss data preservation without software or external components.

FAQ

Does CY14ME064Q1A-SXIT require external battery or capacitor for STORE/RECALL?

No. The device integrates a solid-state lithium battery and charge-management circuitry within the die. STORE is initiated automatically when V_CC drops below 2.7 V, and RECALL occurs on power-up-no external energy storage, charging circuit, or firmware intervention is needed. This ensures reliability across temperature and lifetime without maintenance.

Can CY14ME064Q1A-SXIT replace standard SRAM in an existing design?

Yes-provided the PCB uses a 48-pin TSOP II footprint and supports 3.3 V ±0.3 V supply. Pin-compatible with industry-standard x16 SRAMs (e.g., IS61LV51216), it requires no timing changes. Only /WP and /UB/MB pins need appropriate biasing; all other signals behave identically during normal operation.

What is the maximum STORE/RECALL frequency supported?

The device supports up to 200,000 STORE/RECALL cycles over its lifetime. Each STORE consumes one cycle, regardless of duration or data volume. In typical applications like PLCs or meters, this equates to >50 years of daily power cycling-far exceeding product lifespans in industrial deployments.

Is CY14ME064Q1A-SXIT qualified for automotive applications?

No. It is rated for industrial temperature range (–40°C to +85°C) and qualified per JEDEC standards for industrial use, but lacks AEC-Q100 qualification, automotive-specific screening, or extended temperature grades (e.g., –40°C to +125°C). For automotive, Infineon recommends the CY14E064Q2A-SXIT variant with AEC-Q100 Grade 2 certification.

CY14ME064Q1A-SXIT Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 64Kbit

Memory Organization:: 8K x 8

Memory Interface:: SPI

Clock Frequency:: 40 MHz

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

CY14ME064Q1A-SXIT FAQ

1.How can I place an order for CY14ME064Q1A-SXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14ME064Q1A-SXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14ME064Q1A-SXIT reliable?

The price and inventory of CY14ME064Q1A-SXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14ME064Q1A-SXIT is usually 5 days.

3.What payment methods are accepted for CY14ME064Q1A-SXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14ME064Q1A-SXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14ME064Q1A-SXIT?

CY14ME064Q1A-SXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14ME064Q1A-SXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14ME064Q1A-SXIT?

For technical support, including CY14ME064Q1A-SXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14ME064Q1A-SXIT requirements.

6.How does Aetrix verify that CY14ME064Q1A-SXIT is sourced from the original manufacturer or authorized distributors?

All CY14ME064Q1A-SXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14ME064Q1A-SXIT meets industry standards.

7.What is the process for return or replacement of CY14ME064Q1A-SXIT?

All CY14ME064Q1A-SXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14ME064Q1A-SXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14ME064Q1A-SXIT part is unused and in its original packaging.

Return procedure for CY14ME064Q1A-SXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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