Infineon Technologies CY14U256LA-BA35XI

Overview

CY14U256LA-BA35XI from Infineon Technologies (formerly Cypress) is a 256-Kbit (32 K × 8) nonvolatile static RAM with QuantumTrap technology, delivering 35 ns access time, 20-year data retention, and 1 million STORE cycles. It operates across industrial temperature range (–40°C to +85°C), supports dual-supply operation (VCC = 2.7–3.6 V, VCCQ = 1.65–1.95 V), and integrates AutoStore on power loss using an external VCAP capacitor - used in real-time data logging systems requiring zero-battery backup.

For engineers reviewing the CY14U256LA-BA35XI datasheet, CY14U256LA-BA35XI pinout, CY14U256LA-BA35XI application, or CY14U256LA-BA35XI equivalent, key selection criteria include STORE/RECALL control flexibility (hardware/software/AutoStore), FBGA-48 package compatibility, VCAP capacitor sizing (0.1 µF), HSB busy signaling, and dual-voltage I/O interface for mixed-signal SoC integration.

Technical Context

The CY14U256LA-BA35XI implements a parallel-architecture nvSRAM where each memory cell pairs a standard SRAM array with a QuantumTrap nonvolatile element. STORE and RECALL occur in full-array parallel mode, eliminating block-wise latency and enabling atomic data persistence without firmware intervention during brownout.

Its three STORE initiation methods - AutoStore (triggered by VCC drop below VSWITCH), Hardware STORE (via active-low HSB assertion), and Software STORE (six-address sequence) - operate under strict write-latch validation: STORE only executes if at least one SRAM write occurred since last STORE/RECALL, preventing spurious nonvolatile writes.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch BGA (6 × 10 mm, 1.2 mm height), RoHS-compliant, Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with FM24V01A-G and MB85RS2MT-FPN-GE1, the CY14U256LA-BA35XI uniquely delivers parallel-byte interface, deterministic AutoStore with VCAP energy harvesting, and hardware-level HSB synchronization - making it optimal for legacy SRAM drop-in replacements requiring zero-software-modification data persistence.

Availability

CY14U256LA-BA35XI is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device configuration storage, and automotive ADAS event recorders requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for CY14U256LA-BA35XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions - acquired Cypress Semiconductor in 2020 to expand its embedded systems portfolio.

The CY14U256LA belongs to Infineon's nvSRAM product line, designed specifically for mission-critical applications demanding instantaneous, battery-free nonvolatility with SRAM speed and interface compatibility.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The CY14U256LA-BA35XI requires a 0.1 µF ceramic capacitor on the VCAP pin, placed as close as possible to the device. This value is validated for full 32 Kbyte STORE completion under worst-case VCC dropout profiles down to 2.7 V. Larger values do not improve reliability and may increase power-up delay due to extended charging time.

Can the CY14U256LA-BA35XI be used with a 3.3 V-only system without VCCQ separation?

No - VCCQ must be supplied within 1.65–1.95 V for correct I/O buffer operation. Applying 3.3 V to VCCQ exceeds absolute maximum ratings and will damage the device. A dedicated 1.8 V LDO or regulator is required for VCCQ, even if VCC is 3.3 V. The dual-rail design is mandatory, not optional.

How does the write-latch validation mechanism affect STORE behavior after power-up?

After power-up RECALL completes, the write latch resets. A subsequent AutoStore or Hardware STORE will only execute if at least one valid SRAM write occurs before VCC drops again. This prevents spurious STOREs during initialization sequences and ensures nonvolatile writes reflect actual data changes - extending endurance and avoiding unnecessary power consumption.

Is the HSB pin required to be externally pulled up when unused?

No - the CY14U256LA-BA35XI includes an internal 100 kΩ weak pull-up on HSB. When unused, the pin may be left floating. External pull-up is only needed if faster rise time is required in noise-sensitive environments or when driving long PCB traces; otherwise, the internal pull-up ensures proper HIGH idle state and tHHHD timing compliance.