Infineon Technologies CY14U256LA-BA35XIT

Overview

CY14U256LA-BA35XIT from Infineon Technologies (formerly Cypress) is a 256-Kbit (32 K × 8) nonvolatile static RAM with QuantumTrap technology, delivering 35 ns access time, industrial temperature operation (–40°C to +85°C), dual-supply architecture (VCC = 2.7–3.6 V, VCCQ = 1.65–1.95 V), and 48-ball FBGA packaging. It serves as a drop-in SRAM replacement in mission-critical data logging systems where power loss resilience is mandatory.

For engineers reviewing the CY14U256LA-BA35XIT datasheet, CY14U256LA-BA35XIT pinout, CY14U256LA-BA35XIT application, or CY14U256LA-BA35XIT equivalent, key selection criteria include AutoStore capacitor sizing (0.1 µF), HSB timing behavior during STORE/RECALL, VCAP regulation voltage (≈VCC), software STORE/RECALL address sequences, and compatibility with 1.8 V I/O interfaces in embedded controllers.

Technical Context

The CY14U256LA integrates parallel SRAM and QuantumTrap nonvolatile storage per cell, enabling simultaneous 32 K × 8 byte access and atomic STORE/RECALL operations. Its dual-voltage design isolates core logic (VCC) from I/O buffers (VCCQ), supporting mixed-voltage system interfacing while maintaining 35 ns SRAM read/write performance.

STORE is triggered automatically on VCC drop below VSWITCH using charge stored on the external VCAP capacitor, or manually via HSB assertion or six-step software address sequence (0x0E38 → 0x31C7 → 0x03E0 → 0x3C1F → 0x303F → 0x0FC0). RECALL occurs at power-up or via software sequence ending at 0x0C63, with HSB signaling active STORE/RECALL duration.

Key Specifications

Pinout & Package

48-ball fine-pitch ball grid array (FBGA), 6 × 10 array, 1.2 mm height, RoHS-compliant, Pb-free package (package code BA).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with CY14U256LA-BA35XIT, CY14V256L-BA35XIT trades STORE endurance and temperature grade for cost, while FM24V02-G eliminates VCAP dependency and offers infinite endurance but sacrifices industrial packaging, dual-supply flexibility, and hardware STORE signaling.

Availability

CY14U256LA-BA35XIT is available at Aetrix Electronics and suitable for industrial data loggers, smart electricity meters, railway signaling controllers, and programmable logic controllers requiring stable component supply across multi-year production lifecycles.

Supply support for CY14U256LA-BA35XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive MCUs, and memory solutions, with global R&D and manufacturing infrastructure.

The CY14U series belongs to Infineon's nvSRAM product line, engineered specifically for industrial and infrastructure applications demanding deterministic, capacitor-backed nonvolatile storage without battery reliance or complex firmware overhead.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The datasheet specifies a 0.1 µF ceramic capacitor on the VCAP pin. This value ensures sufficient charge to complete one STORE cycle (tSTORE ≤10 ms) when VCC drops below VSWITCH (typically 2.5 V). Using a smaller capacitor risks incomplete STORE and data corruption; larger values do not improve reliability but may slow VCAP recharge time between power cycles.

Can CY14U256LA-BA35XIT operate with VCC = 3.3 V and VCCQ = 1.8 V simultaneously?

Yes. The device is explicitly designed for dual-supply operation: VCC (2.7–3.6 V) powers the core logic and QuantumTrap cells, while VCCQ (1.65–1.95 V) powers only the I/O buffers. At 3.3 V core and 1.8 V I/O, all DC and AC specifications-including 35 ns access time and setup/hold timing-are fully guaranteed per the Rev. *B datasheet.

How does the CY14U256LA prevent unintended STORE during normal operation?

The device implements write-activity gating: AutoStore and Hardware STORE are ignored unless at least one SRAM write has occurred since the last STORE or RECALL cycle. This prevents spurious STOREs due to noise or floating control lines. Software STORE remains unconditional, allowing explicit control regardless of prior write activity.

Is the HSB pin required to be externally pulled up?

No external pull-up is required. The HSB pin features an internal 100 kΩ weak pull-up resistor. When inactive, it remains HIGH; when a STORE or RECALL is active, it is actively driven LOW. External pull-up is optional and only beneficial if faster release from LOW is needed after completion-but datasheet timing (tHHHD, tLZHSB) already accounts for internal pull-up behavior.