Infineon Technologies CY14V101LA-BA25XI

Overview

CY14V101LA-BA25XI from Infineon Technologies (formerly Cypress) is a 1-Mbit non-volatile SRAM organized as 128 K × 8, featuring 25 ns access time, QuantumTrap non-volatile storage, and automatic STORE/RECALL on power loss or reset. It operates with core V_CC = 3.0–3.6 V and I/O V_CCQ = 1.65–1.95 V in industrial temperature range (–40°C to +85°C), and is housed in a 48-ball FBGA package. It serves as drop-in SRAM replacement in mission-critical data logging and control systems where power interruption must not cause data loss.

For engineers reviewing the CY14V101LA-BA25XI datasheet, CY14V101LA-BA25XI pinout, CY14V101LA-BA25XI application, or CY14V101LA-BA25XI equivalent, key selection criteria include AutoStore capacitor sizing (0.1 µF), HSB timing constraints (tDELAY, tHHHD, tLZHSB), VCAP regulation behavior, and ×8 vs ×16 configuration compatibility - all critical for deterministic power-loss recovery in embedded controllers and industrial PLCs.

Technical Context

This nvSRAM integrates standard fast SRAM with parallel-connected QuantumTrap non-volatile elements per cell, enabling simultaneous STORE/RECALL across all 131,072 bytes without sequential addressing. The architecture decouples volatile read/write performance (25 ns t_AA) from non-volatile endurance (1 million STORE cycles, 20-year retention).

STORE is triggered by three independent mechanisms: AutoStore (V_CC dropout below V_SWITCH with VCAP discharge), Hardware STORE (HSB pin assertion), or Software STORE (6-cycle address sequence). RECALL occurs automatically at power-up or via software command, with HSB signaling busy status during both operations.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), 6 mm × 8 mm, 0.8 mm pitch, RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile SRAM applications.

Compared with FM24V10-G and MB85RS1MT-FPN-GE1, CY14V101LA-BA25XI uniquely delivers deterministic, capacitor-backed STORE on power loss - a requirement for industrial control, energy metering, and safety-critical systems where data persistence must be guaranteed without external supervision.

Availability

CY14V101LA-BA25XI is available at Aetrix Electronics and suitable for industrial programmable logic controllers, smart energy meters, railway signaling units, and medical diagnostic equipment requiring stable component supply across long product lifecycles.

Supply support for CY14V101LA-BA25XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and memory solutions.

CY14V101LA belongs to Infineon's nvSRAM product line, designed specifically for industrial and infrastructure applications demanding zero-data-loss memory resilience during unpredictable power events.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The datasheet specifies a 0.1 µF ceramic capacitor on the VCAP pin. This value ensures sufficient charge to complete one full STORE operation after V_CC drops below V_SWITCH (~2.7 V). Using a smaller capacitor risks incomplete STORE and data corruption; larger values do not improve reliability but may slow VCAP recharge time between events.

Can CY14V101LA-BA25XI operate with V_CCQ = 3.3 V?

No. V_CCQ must be strictly 1.65–1.95 V per the datasheet. Applying 3.3 V to V_CCQ exceeds absolute maximum ratings and will damage the I/O buffers. A dedicated 1.8 V regulator or LDO is required for the V_CCQ rail, independent of the 3.3 V V_CC supply.

Is the HSB pin mandatory for system design?

No - HSB is optional. If unused, it must be left floating (not tied HIGH or LOW). When connected, it provides critical feedback for synchronizing firmware STORE requests and detecting STORE completion. Leaving it unconnected disables Hardware STORE but preserves AutoStore and Software STORE functionality.

How does the CY14V101LA handle concurrent SRAM access during STORE?

During any STORE (Auto, Hardware, or Software), SRAM read/write operations are fully inhibited. The device asserts HSB LOW and ignores CE/OE/WE transitions until STORE completes. This prevents partial writes or corrupted reads - ensuring atomicity of non-volatile state capture without software locking overhead.