Infineon Technologies CY14V101LA-BA25XIT

Overview

CY14V101LA-BA25XIT from Infineon Technologies (formerly Cypress) is a 1-Mbit non-volatile SRAM with QuantumTrap technology, organized as 128 K × 8, offering 25 ns access time, industrial temperature range (–40°C to +85°C), and dual-supply operation (VCC = 3.0–3.6 V, VCCQ = 1.65–1.95 V). It enables seamless data retention in power-loss scenarios for mission-critical embedded control and data logging systems.

For engineers reviewing the CY14V101LA-BA25XIT datasheet, CY14V101LA-BA25XIT pinout, CY14V101LA-BA25XIT application, or CY14V101LA-BA25XIT equivalent, key selection considerations include AutoStore capacitor sizing (0.1 µF), HSB-driven hardware STORE timing (tDELAY = 100 ns), software STORE address sequence compliance, and FBGA-48 package layout constraints for high-reliability industrial PCBs.

Technical Context

This nvSRAM integrates standard fast SRAM with parallel-connected QuantumTrap non-volatile storage cells per bit. STORE and RECALL operations occur at the full memory array level-no block or page addressing-enabling atomic data persistence without firmware overhead.

It supports three STORE initiation modes: automatic on VCC drop below VSWITCH (2.7 V), hardware-triggered via HSB pin assertion, and software-controlled via six-address read sequence. RECALL occurs automatically on power-up or can be initiated by software, with both operations inhibiting SRAM access until completion.

Key Specifications

Pinout & Package

48-ball fine-pitch ball grid array (FBGA), 6 mm × 8 mm, 0.8 mm pitch, RoHS-compliant, with exposed thermal pad (not electrically connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile SRAM applications.

Compared with FM24V10-G and MB85RS1MT, CY14V101LA-BA25XIT uniquely delivers 20-year retention at +85°C with deterministic 25 ns SRAM timing and flexible dual-supply operation-making it optimal for legacy 3.3 V industrial platforms requiring certified long-term data integrity.

Availability

CY14V101LA-BA25XIT is available at Aetrix Electronics and suitable for industrial PLC data loggers, automotive body control modules, medical infusion pump controllers, and railway signaling interface units requiring stable component supply and long-term lifecycle support.

Supply support for CY14V101LA-BA25XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and security solutions for automotive, industrial, and IoT markets.

This device belongs to Infineon's nvSRAM product line-designed specifically for applications demanding instant, reliable, and maintenance-free non-volatility without battery or supercapacitor dependencies.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The datasheet specifies a 0.1 µF X7R ceramic capacitor rated for ≥10 V at the VCAP pin. Using less capacitance risks incomplete STORE during rapid VCC collapse; larger values (e.g., 0.22 µF) extend hold-up time but do not improve reliability beyond specification. Placement must be within 5 mm of the VCAP pin with low-inductance routing.

Can CY14V101LA-BA25XIT operate in a purely software-controlled STORE mode without AutoStore enabled?

Yes. AutoStore can be disabled via the software sequence defined in the datasheet (page 6). Once disabled, STORE only occurs via HSB assertion or the six-address software sequence. This is essential in systems where uncontrolled power-loss events are rare but deterministic save points are required-such as firmware updates or calibration commits.

Is the HSB pin mandatory for system integration?

No. HSB may be left unconnected if hardware STORE triggering and busy indication are not needed. However, leaving it floating is prohibited-either tie to VCCQ via 10 kΩ pull-up or connect to an MCU GPIO. When unused, the internal weak pull-up maintains HIGH state, but external pull-up ensures noise immunity during board-level ESD events.

How does the device handle simultaneous SRAM write and AutoStore initiation?

The nvSRAM completes any ongoing SRAM write before starting AutoStore (tDELAY = 100 ns). If a write is in progress when VCC drops, the device waits for write latch stabilization, then executes STORE. No data corruption occurs-but the total STORE latency increases by up to one write cycle duration (max 25 ns), confirmed in AC switching characteristics table.