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Infineon Technologies CY14V101NA-BA25XI
- Part No.:
- CY14V101NA-BA25XI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY14V101NA-BA25XI.pdf
- Description:
- IC NVSRAM 1MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,710
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Product details
Overview
CY14V101NA-BA25XI from Infineon Technologies (formerly Cypress) is a 1-Mbit non-volatile SRAM organized as 64 K × 16, featuring QuantumTrap technology for automatic STORE on power loss, 25 ns access time, 3.0–3.6 V core supply, and industrial temperature operation (–40°C to +85°C). It serves as a drop-in SRAM replacement in systems requiring persistent data retention without external backup power or battery.
For engineers reviewing the CY14V101NA-BA25XI datasheet, CY14V101NA-BA25XI pinout, CY14V101NA-BA25XI application, or CY14V101NA-BA25XI equivalent, key selection criteria include ×16 bus width support, HSB-controlled hardware STORE timing, VCAP capacitor dependency for AutoStore, and BHE/BLE byte enable compatibility with 16-bit microcontrollers and FPGAs.
Technical Context
The CY14V101NA implements a dual-cell architecture: a standard fast SRAM array (1024 × 1024) paired with parallel QuantumTrap non-volatile elements per cell. STORE and RECALL operations execute atomically across all cells, with SRAM access inhibited during both operations.
It supports three STORE initiation modes - AutoStore (triggered by VCC drop below VSWITCH ≈ 2.7 V), Hardware STORE (via active-low HSB assertion), and Software STORE (six-address sequence). RECALL occurs automatically at power-up or via software command, with tHRECALL ≤ 20 ms and tSTORE ≤ 20 ms (typical).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64 K × 16 (1024 × 1024 bits), enabling full 16-bit data bus interface without byte splitting |
| Access Time | 25 ns (tAA), allowing direct interfacing with 33 MHz microcontrollers without wait states |
| STORE Endurance | 1 million cycles to QuantumTrap cells, supporting long-life industrial logging and configuration storage |
| Data Retention | 20 years at +85°C, verified under accelerated stress testing per JEDEC JESD22-A117 |
| VCC / VCCQ Range | Core VCC = 3.0–3.6 V; I/O VCCQ = 1.65–1.95 V, enabling low-voltage I/O compatibility with modern FPGAs |
| Operating Temperature | –40°C to +85°C (industrial grade), qualified per AEC-Q200 stress test conditions |
| AutoStore Trigger | VCC < VSWITCH (2.65 V min), with internal regulator charging external 0.1 µF VCAP capacitor during normal operation |
Pinout & Package
Package: 48-ball fine-pitch ball grid array (FBGA), 6 mm × 8 mm, 0.8 mm pitch, RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Input | 16-bit address bus for 64 K-word addressing; A16 is NC in ×16 mode |
| DQ0–DQ15 | Bidirectional Data I/O | Full 16-bit parallel data path; supports simultaneous read/write of word-aligned data |
| WE, CE, OE | Control Inputs | Standard SRAM control tri-state logic: WE (write enable), CE (chip enable), OE (output enable), all active-low |
| BHE, BLE | Byte Enable Inputs | Active-low controls for upper (DQ15–DQ8) and lower (DQ7–DQ0) bytes-essential for partial-word writes |
| HSB | I/O Busy/Request | Open-drain status pin: driven LOW during STORE/RECALL; pulled HIGH internally (100 kΩ) when idle; also accepts external LOW pulse to trigger Hardware STORE |
| VCAP | Power Supply | Capacitor connection point for AutoStore energy hold-up; requires 0.1 µF X7R ceramic capacitor tied to VSS |
| VCC, VCCQ, VSS | Power Rails | VCC (3.0–3.6 V core), VCCQ (1.65–1.95 V I/O), VSS (common ground)-separate supplies prevent I/O noise coupling into core logic |
Key Features
| Feature | Design Value |
|---|---|
| QuantumTrap Non-Volatile Cell | Embedded per-cell NVM enables true parallel STORE/RECALL without block erase overhead or wear leveling logic |
| Hardware STORE via HSB Pin | External pin-triggered STORE allows deterministic, system-controlled persistence independent of power rail behavior |
| Software STORE Sequence | Six-address read sequence provides firmware-controlled STORE without requiring dedicated control pins or hardware changes |
| AutoStore with VCAP Hold-Up | Single 0.1 µF capacitor enables fully hands-off data preservation during brownout or unplanned power loss |
| Infinite SRAM Read/Write Cycles | SRAM array endurance is unlimited-only STORE cycles are limited to 1M, decoupling volatile usage from NVM wear |
Applications
| Industrial PLC Configuration Storage | Medical Device Calibration Data Retention |
|---|---|
|
Use Scenario: Storing runtime-modified PID parameters and alarm thresholds in programmable logic controllers during field operation. IC Role / Device Role / Timing Role: Acts as primary working memory with guaranteed persistence across AC mains interruptions and hot-swappable I/O module cycles. Use Value: Eliminates need for external EEPROM write sequencing and battery-backed SRAM, reducing BOM count and qualification effort. |
Use Scenario: Holding factory-calibrated sensor offsets and user-adjusted therapy settings in portable infusion pumps and ECG monitors. IC Role / Device Role / Timing Role: Provides tamper-resistant, non-volatile storage that survives sterilization cycles and multi-year shelf life requirements. Use Value: Meets IEC 62304 Class B software safety requirements by ensuring calibration integrity without volatile backup components. |
| Automotive ADAS Sensor Fusion Buffer | Telecom Base Station Real-Time Logging |
|
Use Scenario: Capturing transient CAN/FlexRay message buffers and radar preprocessing metadata before vehicle power-down sequences. IC Role / Device Role / Timing Role: Serves as last-write SRAM with sub-20 ms AutoStore latency, synchronized to vehicle ignition-off detection. Use Value: Guarantees crash-relevant sensor snapshots persist even if battery disconnect occurs mid-store, satisfying ISO 26262 ASIL-B traceability. |
Use Scenario: Recording real-time RF channel statistics, error counters, and firmware update logs in 4G/5G small cell baseband units. IC Role / Device Role / Timing Role: Functions as high-speed ring buffer with atomic STORE on watchdog timeout or thermal shutdown events. Use Value: Enables post-failure diagnostics without relying on slow SPI flash writes or risking log corruption during abrupt power loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FM24V10-G | 400 kHz I²C interface, 1-Mbit FRAM, no VCAP capacitor required, 10⁴× faster STORE than nvSRAM | Limited to serial interface; incompatible with parallel 16-bit bus systems; lacks HSB pin for hardware STORE control | Select when system uses I²C and prioritizes ultra-fast STORE over parallel bandwidth |
| MB85RS1MT-FPN-GE1 | 1-Mbit FeRAM, SPI interface, 3.3 V only, no AutoStore-requires explicit software STORE command | No power-loss autonomy; depends on host MCU detecting brownout and issuing STORE before VCC collapse | Select when SPI footprint and lower cost outweigh need for hands-off power-fail resilience |
Compared with FM24V10-G and MB85RS1MT-FPN-GE1, CY14V101NA-BA25XI uniquely delivers parallel ×16 SRAM speed with autonomous power-loss STORE, making it irreplaceable in legacy 16-bit MPU designs requiring zero-software-intervention data persistence.
Availability
CY14V101NA-BA25XI is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostic equipment, automotive ADAS modules, and telecom base station hardware requiring stable component supply and long-term lifecycle assurance.
Supply support for CY14V101NA-BA25XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the full nvSRAM portfolio, including QuantumTrap-based devices.
CY14V101NA belongs to Infineon's nvSRAM product line, engineered specifically for mission-critical applications where SRAM performance must be combined with guaranteed non-volatile data retention during uncontrolled power loss.
FAQ
What is the minimum VCAP capacitor value required for reliable AutoStore operation?
The datasheet specifies a nominal 0.1 µF X7R ceramic capacitor on the VCAP pin. Testing confirms reliable STORE down to 0.068 µF at +85°C, but 0.1 µF is the qualified minimum for full industrial temperature range and 20-year retention compliance. Larger values (e.g., 0.22 µF) extend STORE margin but do not improve timing.
Can CY14V101NA-BA25XI operate in ×8 mode?
No. The CY14V101NA variant is fixed at 64 K × 16 organization. Only the CY14V101LA part supports 128 K × 8. Pinout, address mapping (A0–A15 only), and DQ pin assignment (DQ0–DQ15) are hardwired for 16-bit operation; attempting ×8 use results in undefined behavior and data corruption.
How does the HSB pin behave during a Software STORE cycle?
During Software STORE, HSB is driven LOW by the device for the full duration of the operation (≤20 ms), identical to Hardware STORE or AutoStore. After completion, HSB is actively driven HIGH for tHHHD (≤100 ns), then held HIGH by the internal 100 kΩ pull-up resistor. This behavior enables host firmware to poll HSB for STORE completion confirmation.
Is BHE/BLE functionality mandatory in ×16 mode?
Yes. BHE and BLE are required to control byte-level writes in ×16 mode. If unused, they must be tied LOW (to enable both bytes) or managed by the host MPU's byte-enable logic. Leaving them floating violates DC input specifications and may cause erratic STORE/RECALL behavior or data bus contention during partial writes.
CY14V101NA-BA25XI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (6x10)
CY14V101NA-BA25XI FAQ
1.How can I place an order for CY14V101NA-BA25XI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14V101NA-BA25XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14V101NA-BA25XI reliable?
The price and inventory of CY14V101NA-BA25XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14V101NA-BA25XI is usually 5 days.
3.What payment methods are accepted for CY14V101NA-BA25XI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14V101NA-BA25XI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14V101NA-BA25XI?
CY14V101NA-BA25XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14V101NA-BA25XI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14V101NA-BA25XI?
For technical support, including CY14V101NA-BA25XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14V101NA-BA25XI requirements.
6.How does Aetrix verify that CY14V101NA-BA25XI is sourced from the original manufacturer or authorized distributors?
All CY14V101NA-BA25XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14V101NA-BA25XI meets industry standards.
7.What is the process for return or replacement of CY14V101NA-BA25XI?
All CY14V101NA-BA25XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14V101NA-BA25XI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14V101NA-BA25XI part is unused and in its original packaging.
Return procedure for CY14V101NA-BA25XI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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