Infineon Technologies CY14V101NA-BA25XIT

Overview

CY14V101NA-BA25XIT from Infineon Technologies (formerly Cypress) is a 1-Mbit non-volatile SRAM organized as 64 K × 16, featuring QuantumTrap technology for automatic STORE on power loss, 25 ns access time, 3.0–3.6 V core supply, and industrial temperature operation. It serves as a drop-in SRAM replacement in systems requiring persistent data retention without external backup power-e.g., industrial PLCs, medical data loggers, and telecom base station control memory.

For engineers reviewing the CY14V101NA-BA25XIT datasheet, CY14V101NA-BA25XIT pinout, CY14V101NA-BA25XIT application, or CY14V101NA-BA25XIT equivalent, key selection criteria include ×16 bus interface support, hardware STORE via HSB pin, VCAP capacitor-based AutoStore timing, and compatibility with 1.65–1.95 V I/O voltage domains in mixed-voltage embedded systems.

Technical Context

The CY14V101NA integrates parallel SRAM and QuantumTrap non-volatile cells per bit, enabling simultaneous infinite SRAM read/write cycles and up to 1 million STORE operations. Its architecture supports three STORE initiation modes: AutoStore (triggered by VCC drop below VSWITCH), Hardware STORE (via HSB pin assertion), and Software STORE (via six-address sequence).

RECALL occurs automatically at power-up or via software command, restoring data from QuantumTrap to SRAM in tHRECALL ≤ 20 ms. The device enforces write-latch gating: STORE operations (except software-initiated) require at least one prior SRAM write since last RECALL/STORE, preventing spurious non-volatile writes during idle periods.

Key Specifications

Pinout & Package

48-ball fine-pitch ball grid array (FBGA) package with 0.5 mm pitch, RoHS-compliant, moisture sensitivity level 3 (MSL3). Pin layout optimized for high-density PCB routing and thermal dissipation in industrial modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile SRAM applications.

Compared with STK14CA8-3LF35I and FM24V10-G, CY14V101NA-BA25XIT uniquely delivers ×16 interface, dual-supply flexibility, and hands-off AutoStore-making it optimal for space-constrained, mixed-voltage industrial controllers needing guaranteed power-loss resilience.

Availability

CY14V101NA-BA25XIT is available at Aetrix Electronics and suitable for industrial data loggers, telecom base station controllers, medical imaging buffers, and programmable logic controller configuration memory requiring stable component supply across extended product lifecycles.

Supply support for CY14V101NA-BA25XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with emphasis on reliability and industrial-grade qualification.

CY14V101NA belongs to Infineon's nvSRAM product line, designed specifically for mission-critical embedded systems where data integrity must survive uncontrolled power interruptions without batteries or external supervision.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The datasheet specifies a 0.1 µF ceramic capacitor on the VCAP pin, rated for ≥10 V and placed within 5 mm of the device. This value ensures sufficient charge to complete one STORE cycle when VCC drops below VSWITCH (typically 2.7 V). Using smaller capacitance risks incomplete STORE and data corruption; larger values do not improve reliability but may slow VCAP recharge time between power events.

Can CY14V101NA-BA25XIT operate with VCC = 3.0 V and VCCQ = 1.65 V simultaneously?

Yes-the device is fully specified to operate across the entire range: VCC from 3.0 V to 3.6 V and VCCQ from 1.65 V to 1.95 V concurrently. This dual-supply independence allows direct interfacing with 3.3 V microcontrollers driving 1.8 V FPGA I/O banks, eliminating level shifters in mixed-voltage designs.

How does the write-latch mechanism prevent unintended STORE operations?

The nvSRAM internally sets a write-latch flag upon any SRAM write. AutoStore and Hardware STORE are only executed if this flag is set; it clears after each successful STORE or RECALL. This prevents spurious stores during idle periods or noise-induced HSB glitches-software STORE bypasses the latch, enabling forced save regardless of prior writes.

Is the HSB pin mandatory for system design?

No-HSB is optional. If unused, it must be left floating (not tied HIGH or LOW). When implemented, it provides hardware handshake for STORE completion or generates an interrupt to the host processor. Its open-drain structure with internal 100 kΩ pull-up allows direct connection to 3.3 V or 1.8 V interrupt inputs without external resistors.