Infineon Technologies CY14V101NA-BA45XI

Overview

CY14V101NA-BA45XI from Infineon Technologies (formerly Cypress) is a 1-Mbit non-volatile SRAM organized as 64 K × 16, featuring QuantumTrap technology for autonomous STORE/RECALL operations. It delivers 45 ns access time, supports dual V_CC (3.0–3.6 V core / 1.65–1.95 V I/O), and operates across industrial temperature range (–40 °C to +85 °C). Used in mission-critical data logging systems where power loss resilience is mandatory.

For engineers reviewing the CY14V101NA-BA45XI datasheet, CY14V101NA-BA45XI pinout, CY14V101NA-BA45XI application, or CY14V101NA-BA45XI equivalent, key selection criteria include AutoStore capacitor sizing (0.1 µF), HSB-controlled hardware STORE timing (tDELAY = 100 ns min), ×16 bus interface compatibility, and 1 million STORE endurance with 20-year data retention.

Technical Context

This nvSRAM integrates standard SRAM cells with parallel-connected QuantumTrap non-volatile elements per cell, enabling simultaneous STORE/RECALL across all 65,536 words. The architecture decouples volatile read/write performance (infinite cycles) from non-volatile endurance (1M STOREs), with no external controller required for power-loss data preservation.

STORE is triggered automatically on V_CC drop below V_SWITCH (2.7 V typ.) using charge stored on VCAP, or via software address sequence or HSB pin assertion. RECALL occurs at power-up or via software, with HSB signaling busy status during both operations. Byte enables BHE/ BLE support 16-bit word-level access control.

Key Specifications

Pinout & Package

48-ball fine-pitch ball grid array (FBGA), 6 mm × 8 mm, 0.8 mm pitch, RoHS-compliant, with exposed thermal pad (not electrically connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile SRAM applications.

Compared with CY14V101LA-BA45XI, the ×8 variant trades bus efficiency for legacy compatibility; versus FM24V10-G, CY14V101NA offers longer retention and deterministic STORE timing at the cost of capacitor management and finite STORE cycles.

Availability

CY14V101NA-BA45XI is available at Aetrix Electronics and suitable for industrial PLC data loggers, medical device parameter recorders, avionics health monitors, and smart grid metering modules requiring stable component supply with guaranteed long-term availability.

Supply support for CY14V101NA-BA45XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with emphasis on reliability and industrial-grade qualification.

CY14V101NA belongs to Infineon's nvSRAM product line, designed specifically for systems demanding instant, autonomous, and deterministic non-volatile data capture without external power-fail circuitry or firmware intervention.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The datasheet specifies a 0.1 µF X7R ceramic capacitor on the VCAP pin as the minimum for guaranteed STORE completion during a 10 ms V_CC dropout event. Using smaller values risks incomplete STORE and data corruption; larger values (up to 1 µF) improve margin but increase board area and cost without functional benefit.

Can CY14V101NA-BA45XI operate with VCCQ = 1.8 V while VCC = 3.3 V?

Yes - the device supports independent VCC (3.0–3.6 V) and VCCQ (1.65–1.95 V) supplies. At VCCQ = 1.8 V, all I/O pins meet 1.8 V logic thresholds, allowing direct connection to 1.8 V FPGAs or microcontrollers without level shifters, while the 3.3 V core ensures stable SRAM cell operation.

How does the HSB pin behave during a Software STORE cycle?

During Software STORE, HSB is driven LOW by the device immediately after the address sequence is recognized and remains LOW until STORE completion (tSTORE ≤ 15 ms). It returns HIGH for tHHHD (100 ns min), then stays HIGH via internal 100 kΩ pull-up. Host must monitor HSB to avoid initiating concurrent operations.

Is BHE/ BLE functionality active in ×8 configuration?

No - BHE and BLE pins are reserved (NC) in ×8 mode (CY14V101LA). For CY14V101NA-BA45XI (×16), both pins are functional inputs controlling upper and lower byte lanes. Using them incorrectly in ×16 mode causes partial writes or bus contention; they must be pulled HIGH or driven per byte-enable logic.