Infineon Technologies CY14V101QS-SE108XIT

Overview

CY14V101QS-SE108XIT from Cypress Semiconductor is a 1-Mbit (128K × 8) Quad SPI nvSRAM integrating SRAM and SONOS FLASH Quantum Trap nonvolatile storage in a single die. It delivers 108-MHz interface bandwidth, supports SPI/DPI/QPI modes with zero-cycle latency at ≤40 MHz, and operates across –40 °C to 105 °C for extended industrial use - deployed in real-time data logging systems requiring instant power-loss resilience.

For engineers reviewing the CY14V101QS-SE108XIT datasheet, CY14V101QS-SE108XIT pinout, CY14V101QS-SE108XIT application, or CY14V101QS-SE108XIT equivalent, key selection criteria include AutoStore timing via VCAP, HSB-driven hardware STORE/RECALL control, QPI burst wrap read/write support, and dual-voltage operation (VCC 2.7–3.6 V / VCCQ 1.71–2.0 V).

Technical Context

The CY14V101QS-SE108XIT implements a hybrid memory architecture where all read/write operations target the SRAM array, while STORE/RECALL transfers data between SRAM and interleaved SONOS Quantum Trap cells. Its SPI controller supports mode 0 and mode 3 (CPOL/CPHA = [0,0] and [1,1]) and enables instruction decoding for standard, fast, dual I/O, and quad I/O commands.

STORE execution occurs via three independent paths: AutoStore triggered by VCAP discharge at power-down (tSTORE ≤ 20 ms), Software STORE via SPI opcode 0x01, and Hardware STORE via active-low assertion on HSB. RECALL is automatic at power-up or initiated via opcode 0x02, restoring full 128KB of data to SRAM before CS deactivation.

Key Specifications

Pinout & Package

Package: 16-pin SOIC (standard pinout per Figure 1, Document 001-85257 Rev. *M). Pin assignments validated against official Cypress pin definition table and logic block diagram.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with FM25V01-G and MB85RS1MT, CY14V101QS-SE108XIT uniquely combines QPI speed, VCAP-based AutoStore, HSB-triggered hardware STORE, and 20-year/105 °C retention - making it the only option for ASIL-B or SIL-2 certified power-loss-resilient memory.

Availability

CY14V101QS-SE108XIT is available at Aetrix Electronics and suitable for industrial data loggers, programmable logic controllers, medical infusion pumps, and automotive ADAS event recorders requiring stable component supply across extended temperature and long product lifecycles.

Supply support for CY14V101QS-SE108XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable system-on-chip solutions for industrial, automotive, and medical applications.

The CY14V101QS belongs to Cypress's nvSRAM product line, engineered specifically for systems demanding instantaneous, wear-free, nonvolatile data retention without battery backup - targeting mission-critical infrastructure where data integrity cannot be compromised.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14V101QS-SE108XIT requires a minimum 4.7 µF tantalum or ceramic capacitor on VCAP to guarantee STORE completion within 20 ms during power loss at VCC = 2.7 V and T = 85 °C. Derating to 10 µF is recommended for margin across voltage and temperature extremes. The capacitor must be placed within 5 mm of the VCAP pin with low-ESR design.

Can the CY14V101QS-SE108XIT operate in standard SPI mode without enabling QPI or DPI?

Yes - the device defaults to standard SPI mode after power-up. QPI and DPI must be explicitly enabled using SPIEN, DPIEN, or QPIEN instructions. Standard SPI supports up to 40 MHz with zero-cycle latency for READ/WRITE, and uses only SI, SO, SCK, and CS pins - eliminating dependency on WP and NC (I/O3) pins.

How does the HSB pin function during a hardware STORE sequence?

When HSB is pulled LOW externally, the device initiates STORE immediately and drives HSB LOW until completion (tSTORE ≤ 20 ms). Upon finish, HSB transitions HIGH for tHHHD (≥100 ns), then remains HIGH via weak internal pull-up. No external pull-up is mandatory, but recommended for noise immunity in noisy industrial environments.

Is the 8-byte serial number truly one-time programmable and locked permanently?

Yes - the serial number register is implemented as OTP eFuses. Once written via WRSN instruction, the value cannot be altered or erased. Programming requires WREN followed by WRSN with valid checksum; subsequent RDSN reads return the committed value indefinitely, even after power cycles or STORE/RECALL operations.