Infineon Technologies CY14V101QS-SF108XQT

Overview

CY14V101QS-SF108XQT from Cypress Semiconductor is a 1-Mbit (128K × 8) Quad SPI nvSRAM integrating SRAM and SONOS FLASH Quantum Trap nonvolatile storage in a single die. It delivers 108-MHz interface bandwidth, supports SPI/DPI/QPI modes, and enables infinite SRAM write cycles with 1M STORE endurance to nonvolatile cells. Used in industrial controllers for power-fail-safe data logging where persistent memory retention at 105 °C is required.

For engineers reviewing the CY14V101QS-SF108XQT datasheet, CY14V101QS-SF108XQT pinout, CY14V101QS-SF108XQT application, or CY14V101QS-SF108XQT equivalent, key selection criteria include AutoStore timing via VCAP, HSB-driven hardware STORE/RECALL control, QPI burst wrap read/write support, and dual-voltage I/O (VCCQ = 1.71–2.0 V) compatibility with low-power microcontrollers.

Technical Context

The CY14V101QS operates as an SPI slave supporting modes 0 and 3 (CPOL/CPHA = [0,0] and [1,1]), with configurable I/O width (1-/2-/4-bit) via opcodes. Its dual-voltage architecture separates core logic (VCC = 2.7–3.6 V) from I/O buffers (VCCQ = 1.71–2.0 V), enabling interoperability with 1.8 V host interfaces while maintaining robust internal operation.

STORE and RECALL are implemented through three independent paths: AutoStore (triggered by VCAP discharge at power-down), Software STORE/RECALL (SPI instructions), and Hardware STORE/RECALL (HSB pin assertion). All operations transfer full 128KB between SRAM and SONOS cells with guaranteed 20-year data retention at 85 °C.

Key Specifications

Pinout & Package

Package: 16-pin SOIC (standard pinout per Figure 1, Document 001-85257 Rev. *M, Page 4).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with FM25V01-G and MB85RS1MT, CY14V101QS-SF108XQT uniquely combines 108-MHz QPI, VCAP-based AutoStore, HSB-triggered hardware control, and –40 °C to 105 °C qualification-making it the only option for deterministic, high-throughput, extended-temperature nvSRAM deployment.

Availability

CY14V101QS-SF108XQT is available at Aetrix Electronics and suitable for industrial PLC data logging, automotive ECU firmware storage, and medical infusion pump memory requiring stable component supply across long-lifecycle programs.

Supply support for CY14V101QS-SF108XQT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and IoT applications.

The CY14V101QS belongs to Cypress's nvSRAM product line, engineered specifically for systems demanding instantaneous nonvolatility, zero-write-endurance limits, and deterministic power-loss recovery without external support circuitry.

FAQ

What is the role of the VCAP pin, and what capacitor value is required?

The VCAP pin supplies hold-up energy to complete AutoStore during power loss. A 4.7 µF ±20% tantalum or ceramic capacitor rated ≥6.3 V must be placed within 5 mm of the pin with low-ESR (<1 Ω). No connection is allowed if AutoStore is disabled-VCAP must never be tied to ground.

How does the HSB pin function during STORE and RECALL operations?

HSB acts as an open-drain status indicator: driven LOW during active STORE/RECALL, then pulled HIGH after completion. When used as input, pulling HSB LOW triggers immediate hardware STORE. During power-up RECALL, HSB remains HIGH until SRAM reload completes-providing visible synchronization for host firmware.

Can CY14V101QS-SF108XQT operate with a 1.8 V microcontroller without level shifters?

Yes. VCCQ (1.71–2.0 V) powers all I/O pins, matching standard 1.8 V logic levels. VCC (2.7–3.6 V) supplies the core independently. This dual-rail design allows direct connection to 1.8 V MCUs while maintaining internal timing margins for 108 MHz QPI operation.

What happens if the AutoStore capacitor fails or is undersized?

If VCAP is missing, undersized, or degraded, AutoStore will fail silently during power loss-data in SRAM is lost. The device continues normal operation, but RECALL at next power-up restores only last successfully stored image. Designers must validate VCAP ESR and capacitance decay over temperature and lifetime per JEDEC JESD22-A114.