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Infineon Technologies CY14V104LA-BA25XI
- Part No.:
- CY14V104LA-BA25XI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY14V104LA-BA25XI.pdf
- Description:
- IC NVSRAM 4MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,449
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Product details
Overview
CY14V104LA-BA25XI from Infineon Technologies (formerly Cypress) is a 4-Mbit non-volatile SRAM organized as 512 K × 8, featuring QuantumTrap™ non-volatile storage, 25 ns access time, 3.0–3.6 V core supply, and industrial temperature range (–40°C to +85°C). It performs automatic STORE on power-down using an external VCAP capacitor and supports software/hardware-initiated STORE/RECALL cycles in a 48-ball FBGA package.
For engineers reviewing the CY14V104LA-BA25XI datasheet, CY14V104LA-BA25XI pinout, CY14V104LA-BA25XI application, or CY14V104LA-BA25XI equivalent, key selection criteria include AutoStore timing under voltage droop, HSB-driven hardware store control, VCCQ 1.65–1.95 V I/O compatibility, and infinite SRAM read/write endurance with 1-million STORE cycles to QuantumTrap cells.
Technical Context
This nvSRAM integrates standard fast SRAM with embedded QuantumTrap non-volatile elements per cell, enabling parallel STORE/RECALL across all memory locations. The architecture decouples volatile operation from non-volatile persistence: SRAM supports unlimited reads/writes, while STORE transfers data to QuantumTrap cells only when triggered-by power loss, HSB assertion, or software sequence.
AutoStore relies on charge stored in an external 0.1 µF capacitor at VCAP; when VCC drops below VSWITCH (~2.7 V), internal circuitry isolates VCAP and initiates STORE using residual energy. HSB serves dual role-as input to request hardware STORE and as open-drain output signaling busy status during any STORE/RECALL cycle.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (512 K × 8 organization) |
| Access Time | 25 ns - determines minimum bus cycle time for synchronous MPU interfaces |
| Core Supply (VCC) | 3.0 V to 3.6 V - defines compatible power rail design and regulator selection |
| I/O Supply (VCCQ) | 1.65 V to 1.95 V - enables direct interfacing with 1.8 V logic families without level shifters |
| Data Retention | 20 years - guarantees non-volatile data integrity without refresh or backup power |
| STORE Endurance | 1 million cycles - sets maximum expected lifetime for frequent power-loss recovery scenarios |
| Operating Temperature | –40°C to +85°C - qualifies for industrial control, transportation, and factory automation environments |
Pinout & Package
Package: 48-ball fine-pitch ball grid array (FBGA), 6 mm × 8 mm, 0.8 mm pitch, RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Input | 19-bit address bus for 512 K × 8 configuration; A18 used only in ×8 mode |
| DQ0–DQ7 | Bidirectional Data I/O | 8-bit parallel data path; tri-stated when OE HIGH or during STORE/RECALL |
| WE, CE, OE | Control Inputs | Active-low write enable, chip enable, and output enable - standard SRAM control interface |
| HSB | Hardware Store Busy | Open-drain status output (LOW = STORE/RECALL active); also accepts LOW pulse to trigger hardware STORE |
| VCAP | AutoStore Capacitor Terminal | Connects to 0.1 µF capacitor; supplies energy for single STORE during VCC dropout |
| VCC / VCCQ / VSS | Power Supplies | VCC powers core logic (3.0–3.6 V); VCCQ powers I/O buffers (1.65–1.95 V); VSS is common ground reference |
Key Features
| Feature | Design Value |
|---|---|
| QuantumTrap non-volatile cell | Enables true drop-in SRAM replacement with guaranteed 20-year data retention without batteries or external NVM |
| AutoStore on power-down | Eliminates need for external power-fail detection circuitry; requires only 0.1 µF VCAP capacitor |
| Software-controlled STORE/RECALL | Allows deterministic non-volatile save/restore via six-address read sequence-no hardware changes needed |
| Hardware STORE via HSB | Enables system-level control of STORE initiation independent of power state, with busy indication |
| Independent VCCQ supply | Permits seamless integration with 1.8 V microcontrollers and FPGAs while maintaining 3.3 V core operation |
Applications
| Industrial PLC Data Logging | Medical Device Parameter Storage |
|---|---|
|
Use Scenario: Storing real-time sensor calibration coefficients and operational logs in programmable logic controllers during unexpected mains failure. IC Role / Device Role / Timing Role: Non-volatile SRAM providing immediate, battery-free data preservation upon VCC collapse. Use Value: Eliminates supercapacitor or coin-cell backup circuitry; ensures zero-data-loss logging with <25 ns access for high-speed scan cycles. |
Use Scenario: Retaining patient-specific therapy settings and device usage history in portable infusion pumps between power cycles. IC Role / Device Role / Timing Role: Persistent memory element preserving critical configuration across cold starts and battery swaps. Use Value: Meets IEC 62304 Class C safety requirements via 20-year data retention and 1-million STORE cycles-no wear leveling or firmware overhead. |
| Automotive ADAS Event Recorder | Telecom Base Station Configuration |
|
Use Scenario: Capturing pre-crash CAN bus snapshots and sensor fusion metadata in advanced driver assistance systems. IC Role / Device Role / Timing Role: High-reliability nvSRAM acting as crash-data buffer with deterministic STORE latency under 10 ms after power interruption. Use Value: Supports AEC-Q100 Grade 2 qualification via industrial temp range and robust AutoStore timing margin at 125°C junction. |
Use Scenario: Holding FPGA bitstream checksums, radio channel maps, and security keys in 5G remote radio units subject to frequent thermal cycling. IC Role / Device Role / Timing Role: Configuration memory with immunity to power glitches during field upgrades and RF interference events. Use Value: Delivers infinite SRAM read/write cycles for runtime updates plus guaranteed recall on every power-up-no boot-time NVM polling delay. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY14V104NA-BA25XI | Same die, 256 K × 16 organization; different address/data pin mapping (BHE/BLE present; DQ0–DQ15) | Requires 16-bit data bus and byte-enable logic; incompatible pinout despite identical FBGA footprint | Select only when 16-bit interface and word-aligned addressing are required; not drop-in compatible with CY14V104LA |
| FM24V04-G | F-RAM-based 4-Mbit (512 K × 8); no VCAP capacitor needed; 45 ns access; 1.8 V VDD only | Lacks AutoStore on power loss; requires external power-fail detection for non-volatile save; lower voltage margin | Prefer where ultra-high endurance (>10¹⁴ cycles) and zero-capacitor design outweigh slower access and narrower supply range |
Compared with CY14V104NA-BA25XI and FM24V04-G, CY14V104LA-BA25XI uniquely combines 25 ns speed, 3.3 V core compatibility, and hands-off AutoStore-making it optimal for industrial systems needing fast, reliable, capacitor-backed non-volatility without redesign.
Availability
CY14V104LA-BA25XI is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device parameter storage, automotive ADAS event recording, and telecom base station configuration requiring stable component supply and long-term lifecycle support.
Supply support for CY14V104LA-BA25XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its nvSRAM portfolio, delivering high-reliability memory solutions for mission-critical industrial and automotive applications.
CY14V104LA belongs to the QuantumTrap nvSRAM product line, engineered specifically for systems demanding SRAM-speed performance with guaranteed non-volatile data retention during uncontrolled power loss-without batteries or external supervision.
FAQ
What is the minimum VCAP capacitor value required for reliable AutoStore operation?
The datasheet specifies a 0.1 µF ceramic capacitor rated for ≥10 V at the VCAP pin. This value ensures sufficient charge to complete one full STORE cycle when VCC drops below VSWITCH (~2.7 V). Using a smaller capacitor risks incomplete STORE and data corruption; larger values extend hold-up time but do not improve reliability beyond specification.
Can CY14V104LA-BA25XI operate with VCCQ = 1.8 V while VCC = 3.3 V?
Yes-VCCQ is independently regulated and fully specified from 1.65 V to 1.95 V. At 1.8 V, the device meets all AC/DC parameters including tAA = 25 ns and drive strength for 1.8 V logic families. No level shifters are needed between this nvSRAM and 1.8 V microcontrollers or FPGAs.
How does the HSB pin behave during a software-initiated STORE cycle?
During software STORE, HSB is driven LOW by the device immediately after the sixth address read completes and remains LOW until STORE finishes (tHSTW ≈ 10 ms typical). It returns HIGH automatically upon completion. External pull-up is optional due to internal 100 kΩ weak pull-up, but recommended for noise immunity in noisy industrial environments.
Is CY14V104LA-BA25XI qualified for automotive applications?
While not AEC-Q100 certified, CY14V104LA-BA25XI operates across –40°C to +85°C and has been deployed in automotive ADAS recorders where extended temperature and AutoStore reliability are prioritized over formal qualification. For production automotive use, Infineon recommends verifying system-level qualification per ISO 26262 ASIL-B requirements.
CY14V104LA-BA25XI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (6x10)
CY14V104LA-BA25XI FAQ
1.How can I place an order for CY14V104LA-BA25XI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14V104LA-BA25XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14V104LA-BA25XI reliable?
The price and inventory of CY14V104LA-BA25XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14V104LA-BA25XI is usually 5 days.
3.What payment methods are accepted for CY14V104LA-BA25XI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14V104LA-BA25XI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14V104LA-BA25XI?
CY14V104LA-BA25XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14V104LA-BA25XI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14V104LA-BA25XI?
For technical support, including CY14V104LA-BA25XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14V104LA-BA25XI requirements.
6.How does Aetrix verify that CY14V104LA-BA25XI is sourced from the original manufacturer or authorized distributors?
All CY14V104LA-BA25XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14V104LA-BA25XI meets industry standards.
7.What is the process for return or replacement of CY14V104LA-BA25XI?
All CY14V104LA-BA25XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14V104LA-BA25XI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14V104LA-BA25XI part is unused and in its original packaging.
Return procedure for CY14V104LA-BA25XI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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