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Infineon Technologies CY14V104LA-BA45XIT

Part No.:
CY14V104LA-BA45XIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixCY14V104LA-BA45XIT.pdf
Description:
IC NVSRAM 4MBIT PARALLEL 48FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,093

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Product details

Overview

CY14V104LA-BA45XIT from Infineon Technologies (formerly Cypress) is a 4-Mbit non-volatile SRAM organized as 512 K × 8, featuring QuantumTrap™ non-volatile storage, 45 ns access time, 3.0–3.6 V core supply (VCC), and 1.65–1.95 V I/O supply (VCCQ). It performs automatic STORE on power-down using an external VCAP capacitor and supports software/hardware-initiated STORE/RECALL in industrial temperature range (–40°C to +85°C).

For engineers reviewing the CY14V104LA-BA45XIT datasheet, CY14V104LA-BA45XIT pinout, CY14V104LA-BA45XIT application, or CY14V104LA-BA45XIT equivalent, key selection criteria include AutoStore timing under voltage droop, HSB-driven hardware store control, VCAP sizing for reliable 1-million STORE endurance, and FBGA-48 pin compatibility with legacy Cypress nvSRAM designs.

Technical Context

This nvSRAM integrates standard SRAM cells with parallel QuantumTrap non-volatile elements per cell, enabling simultaneous STORE/RECALL across all 524,288 bytes without block erasure. The architecture decouples volatile read/write (infinite cycles) from non-volatile STORE (1 million cycles) and RECALL (infinite cycles), with data retention guaranteed for 20 years at 85°C.

STORE is triggered by three independent mechanisms: AutoStore on VCC drop below VSWITCH (using charge from VCAP), hardware STORE via HSB pin assertion, or software STORE via six-address sequence. RECALL occurs automatically on power-up or via software command, with HSB signaling busy status during both operations.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4 Mbit (512 K × 8 organization); enables direct replacement of standard 512 KB SRAM in legacy systems without address/data bus redesign.
Access Time 45 ns max; ensures compatibility with 22 MHz system clocks and meets timing margins for industrial microcontroller interfaces.
STORE Endurance 1 million cycles to QuantumTrap; defines maximum field-replaceable event count before wear-out, critical for logging or configuration backup applications.
Data Retention 20 years at +85°C; guarantees long-term data integrity in unpowered storage without battery or external NVM.
VCC Operating Range 3.0 V to 3.6 V; matches standard 3.3 V rail tolerances and avoids level-shifting in mixed-voltage systems.
VCCQ Range 1.65 V to 1.95 V; supports low-voltage I/O interfacing with modern SoCs and FPGAs while maintaining signal integrity.
Temperature Range –40°C to +85°C; qualified for industrial control, motor drives, and factory automation environments.

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), 6 mm × 8 mm, 0.8 mm pitch, RoHS-compliant, lead-free.

Pin/Terminal Circuit Role Design Meaning
A0–A18 Address Input 19-bit address bus for 512 K × 8 mode; A18 used only in ×8 configuration; no A18 in ×16 mode.
DQ0–DQ7 Bidirectional Data I/O 8-bit data bus; tri-stated when OE HIGH or during STORE/RECALL; shared for read/write in standard SRAM protocol.
WE, CE, OE Control Inputs Active-low write enable, chip enable, output enable; compatible with standard SRAM timing and MPU bus protocols.
HSB Hardware Store Busy Open-drain status pin: driven LOW during STORE/RECALL; pulled HIGH internally (100 kΩ) post-operation; used to trigger or monitor store events.
VCAP AutoStore Capacitor Supply Connects to external 0.1 µF capacitor; provides energy for single STORE operation during VCC dropout; must be present if AutoStore enabled.
VCC / VCCQ / VSS Power Terminals VCC = core logic (3.0–3.6 V); VCCQ = I/O buffers (1.65–1.95 V); VSS = common ground reference for both domains.

Key Features

Feature Design Value
Hands-off AutoStore Automatic STORE initiated on VCC drop below VSWITCH using charge from external VCAP capacitor-no firmware intervention required.
Parallel STORE/RECALL All 524,288 memory cells transfer data simultaneously, eliminating block erase delays and ensuring deterministic <10 ms STORE time.
Three-Mode STORE Control Supports hardware (HSB pin), software (6-address sequence), and AutoStore-enables flexible integration into safety-critical or resource-constrained systems.
Independent Endurance Ratings Infinite SRAM reads/writes + infinite RECALL cycles + 1 million STORE cycles-decouples volatile performance from non-volatile wear limits.
Industrial Voltage Tolerance VCCQ range (1.65–1.95 V) allows direct interface with 1.8 V FPGA I/O banks or low-power microcontrollers without level shifters.

Applications

Industrial PLC Data Logging Medical Device Configuration Backup

Use Scenario: Retaining real-time sensor calibration and operational history during unexpected AC power loss in programmable logic controllers.

IC Role / Device Role / Timing Role: Non-volatile SRAM providing immediate, byte-level write persistence without battery or EEPROM wear leveling.

Use Value: Eliminates need for external backup batteries or flash translation layers; guarantees 20-year retention of critical setup data even after 1M power-cycle events.

Use Scenario: Preserving patient-specific therapy parameters and device self-test results across repeated sterilization cycles and power interruptions in infusion pumps.

IC Role / Device Role / Timing Role: High-reliability nvSRAM serving as primary configuration store with deterministic STORE latency (<10 ms) and zero firmware overhead.

Use Value: Meets IEC 62304 Class C software requirements by avoiding flash write failures; supports infinite recall for rapid boot-time parameter restoration.

Automotive ADAS Sensor Fusion Buffer Telecom Base Station Timing Module

Use Scenario: Holding last-known vehicle state (yaw rate, wheel speed, steering angle) during engine cranking-induced 12 V rail dip in advanced driver assistance systems.

IC Role / Device Role / Timing Role: Fail-safe memory buffer that captures volatile sensor fusion outputs before power collapse, using VCAP-supplied STORE.

Use Value: Enables seamless reinitialization post-cranking without GPS reacquisition delay; withstands –40°C to +85°C ambient and 100,000+ STORE cycles over 15-year service life.

Use Scenario: Storing precise oscillator trim values and synchronization state in IEEE 1588 PTP grandmaster clocks during brief AC brownouts.

IC Role / Device Role / Timing Role: Low-jitter, low-latency nvSRAM preserving nanosecond-level timing metadata without clock domain crossing artifacts.

Use Value: Maintains sub-microsecond time accuracy across power interruptions; VCCQ=1.8 V compatibility simplifies integration with high-speed SerDes PHYs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY14V104NA-BA45XIT Same die, 256 K × 16 organization; requires 16-bit data bus and different address mapping (A0–A17 only). Used where 16-bit microprocessor or DSP interfaces dominate; not pin-compatible due to DQ15–DQ0 vs DQ7–DQ0 layout and BHE/BLE presence. Select only when system uses 16-bit bus width and can accommodate revised address/data routing.
FM24V10-G F-RAM-based 1 Mbit (128 K × 8); 130 ns access; single 2.7–3.6 V supply; no VCAP required; unlimited STORE endurance. Lacks AutoStore on power-loss; relies on host-controlled STORE; lower density and slower access than CY14V104LA. Choose for ultra-high endurance (>1014 cycles) in low-write-rate applications where deterministic STORE timing is less critical than endurance.

Compared with CY14V104NA-BA45XIT, the CY14V104LA-BA45XIT offers native 8-bit bus compatibility and simpler layout; versus FM24V10-G, it delivers faster access, integrated AutoStore, and higher density-but requires careful VCAP design and accepts lower STORE cycle count.

Availability

CY14V104LA-BA45XIT is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device configuration backup, automotive ADAS sensor fusion buffering, and telecom base station timing modules requiring stable component supply and long-term lifecycle support.

Supply support for CY14V104LA-BA45XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and security solutions for industrial, automotive, and IoT markets.

This part belongs to Infineon's nvSRAM product line-designed specifically to replace battery-backed SRAM and serial EEPROM in mission-critical systems demanding instant non-volatility, high write endurance, and zero maintenance.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The datasheet specifies a 0.1 µF ceramic capacitor rated for ≥10 V, placed within 10 mm of the VCAP pin and connected directly to VSS. Using undersized or high-ESR capacitors risks incomplete STORE execution and data corruption during VCC dropout. The internal regulator charges VCAP to ~2.5 V; actual required capacitance depends on system VCC droop profile and STORE current draw.

Can CY14V104LA-BA45XIT be used in a 16-bit data bus configuration?

No-it is strictly a 512 K × 8 device with DQ0–DQ7 only. Attempting to connect DQ8–DQ15 will result in floating pins and potential noise coupling. For 16-bit systems, use CY14V104NA-BA45XIT, which has full DQ0–DQ15, BHE/BLE controls, and 256 K × 16 organization-though pinout and address mapping differ significantly.

How does the HSB pin behave during a software-initiated STORE?

HSB is driven LOW immediately upon software STORE initiation and remains LOW until the operation completes (~10 ms). After completion, it is actively driven HIGH for tHHHD (≤100 ns), then held HIGH by the internal 100 kΩ pull-up. This behavior is identical for hardware and AutoStore, enabling unified busy-wait polling across all STORE modes.

Is there a risk of data corruption if AutoStore is enabled but no VCAP capacitor is installed?

Yes-enabling AutoStore without VCAP causes the device to attempt STORE using insufficient residual charge, resulting in partial or failed writes and potential memory cell corruption. The datasheet mandates disabling AutoStore via software sequence (page 6) if VCAP is omitted. Default factory setting enables AutoStore, so verification and configuration are mandatory during system bring-up.

CY14V104LA-BA45XIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
4Mbit
Memory Organization:
512K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-FBGA (6x10)

CY14V104LA-BA45XIT FAQ

1.How can I place an order for CY14V104LA-BA45XIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14V104LA-BA45XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14V104LA-BA45XIT reliable?

The price and inventory of CY14V104LA-BA45XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14V104LA-BA45XIT is usually 5 days.

3.What payment methods are accepted for CY14V104LA-BA45XIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14V104LA-BA45XIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14V104LA-BA45XIT?

CY14V104LA-BA45XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14V104LA-BA45XIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14V104LA-BA45XIT?

For technical support, including CY14V104LA-BA45XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14V104LA-BA45XIT requirements.

6.How does Aetrix verify that CY14V104LA-BA45XIT is sourced from the original manufacturer or authorized distributors?

All CY14V104LA-BA45XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14V104LA-BA45XIT meets industry standards.

7.What is the process for return or replacement of CY14V104LA-BA45XIT?

All CY14V104LA-BA45XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14V104LA-BA45XIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14V104LA-BA45XIT part is unused and in its original packaging.

Return procedure for CY14V104LA-BA45XIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY14V104LA-BA45XIT Tags

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