Infineon Technologies CY14V104NA-BA25XI

Overview

CY14V104NA-BA25XI from Infineon Technologies (formerly Cypress) is a 4-Mbit non-volatile SRAM organized as 256 K × 16, featuring QuantumTrap® technology for automatic STORE on power-down, software/hardware-controlled STORE/RECALL, and industrial-grade operation. It operates with core V_CC = 3.0–3.6 V, I/O V_CCQ = 1.65–1.95 V, supports 1-million STORE cycles, and delivers 20-year data retention in a 48-ball FBGA package.

For engineers reviewing the CY14V104NA-BA25XI datasheet, CY14V104NA-BA25XI pinout, CY14V104NA-BA25XI application, or CY14V104NA-BA25XI equivalent, key selection criteria include ×16 bus width support, HSB-driven hardware STORE timing, VCAP capacitor dependency for AutoStore, and BHE/BLE byte enable control in embedded systems requiring deterministic non-volatile write-back without external controllers.

Technical Context

The CY14V104NA implements a dual-cell architecture pairing standard SRAM with integrated QuantumTrap non-volatile elements per cell, enabling parallel STORE/RECALL across all 256 K words. It supports three STORE initiation modes: AutoStore (triggered by V_CC drop below V_SWITCH), hardware STORE (via HSB pin assertion), and software STORE (six-address read sequence).

RECALL occurs automatically on power-up or via software command, restoring full 256 K × 16 contents to SRAM in t_HRECALL ≤ 20 ms. The device uses separate V_CC (core) and V_CCQ (I/O) supplies, with BHE/BLE enabling selective 8-bit writes within 16-bit words - critical for MPU interfacing where partial-word updates are required.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), 6 mm × 8 mm, 0.8 mm pitch, RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile SRAM applications.

Compared with CY14V104LA-BA25XI and FM24V10-G, the CY14V104NA-BA25XI uniquely balances 4-Mbit density, 16-bit bus efficiency, and deterministic AutoStore - making it optimal for industrial MPUs needing byte-selectable writes and guaranteed power-loss resilience without firmware overhead.

Availability

CY14V104NA-BA25XI is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostic devices, avionics data recorders, and railway signaling controllers requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for CY14V104NA-BA25XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions - formed through the acquisition of Cypress Semiconductor in 2020.

This part belongs to Infineon's nvSRAM product line, designed specifically for mission-critical systems where data persistence must be guaranteed across uncontrolled power events without batteries, capacitors requiring active charging circuits, or external controllers.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The datasheet specifies a nominal 0.1 µF ceramic capacitor on the VCAP pin, rated for ≥10 V and placed within 5 mm of the device. This value ensures sufficient charge to complete one STORE cycle when V_CC drops from 3.3 V to V_SWITCH (2.7 V). Larger values extend margin but do not improve speed; undersized capacitors risk incomplete STORE and data corruption.

Can CY14V104NA-BA25XI operate with V_CCQ = 1.8 V while V_CC = 3.3 V?

Yes - the device is explicitly characterized for V_CCQ = 1.65–1.95 V and V_CC = 3.0–3.6 V simultaneously. This dual-supply design allows direct interfacing with 1.8-V FPGAs or application processors without level-shifting circuitry, reducing BOM count and signal integrity complexity in mixed-voltage systems.

How does the HSB pin behave during a software-initiated STORE?

During software STORE, HSB is driven LOW immediately after the six-address sequence completes and remains LOW for the full STORE duration (t_STORE ≤ 20 ms). It returns HIGH only after non-volatile programming finishes. This behavior matches hardware STORE, enabling consistent busy-wait polling or interrupt-driven handling regardless of initiation method.

Is BHE/BLE functionality active in ×8 configuration?

No - BHE and BLE are defined as "applicable for ×16 configuration only" per the official datasheet. In ×8 mode (e.g., CY14V104LA), these pins are NC. For CY14V104NA-BA25XI, BHE controls DQ15–DQ8 and BLE controls DQ7–DQ0, enabling true 8-bit sub-word writes within the 16-bit data bus - a key differentiator for efficient MPU register updates.