Infineon Technologies CY14V104NA-BA25XIT
- Part No.:
- CY14V104NA-BA25XIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY14V104NA-BA25XIT.pdf
- Description:
- IC NVSRAM 4MBIT PARALLEL 48FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:2,182
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY14V104NA-BA25XIT from Infineon Technologies (formerly Cypress) is a 4-Mbit non-volatile SRAM organized as 256 K × 16, featuring QuantumTrap technology for automatic STORE on power-down, software/hardware-controlled STORE/RECALL, 25 ns access time, and industrial temperature operation in a 48-ball FBGA package. It serves as drop-in SRAM replacement in systems requiring persistent data retention without external backup power.
For engineers reviewing the CY14V104NA-BA25XIT datasheet, CY14V104NA-BA25XIT pinout, CY14V104NA-BA25XIT application, or CY14V104NA-BA25XIT equivalent, key selection criteria include ×16 bus interface support, VCAP-based AutoStore timing, HSB-driven hardware store control, BHE/ BLE byte enable handling, and compatibility with 1.8 V I/O and 3.3 V core voltage rails.
Technical Context
This nvSRAM integrates parallel SRAM and QuantumTrap non-volatile storage per cell, enabling simultaneous STORE/RECALL across all 256 K words. It supports three STORE initiation modes: AutoStore triggered by VCC drop below VSWITCH (2.7 V), hardware STORE via HSB pin assertion, and software STORE via six-address read sequence.
RECALL occurs automatically at power-up or can be initiated by software. The device enforces write-before-store logic: AutoStore and hardware STORE are suppressed unless at least one SRAM write has occurred since last RECALL or STORE. HSB functions as both input (to request STORE) and open-drain output (to indicate busy status during STORE/RECALL).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256 K × 16 organization) |
| Access Time | 25 ns - determines maximum SRAM read/write cycle rate in high-speed control buffers |
| Data Retention | 20 years - guaranteed non-volatile data hold without power or refresh |
| STORE Endurance | 1 million cycles - limits total number of hardware/software/AutoStore operations over lifetime |
| VCC Range | 3.0 V to 3.6 V - core supply tolerance defining system regulator requirements |
| VCCQ Range | 1.65 V to 1.95 V - I/O voltage range compatible with 1.8 V logic families |
| Operating Temperature | –40 °C to +85 °C - validated for industrial-grade embedded control environments |
Pinout & Package
Package: 48-ball fine-pitch ball grid array (FBGA), 6 mm × 8 mm, 0.8 mm pitch, RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | 18-bit address bus for 256 K-word addressing; A17 is MSB in ×16 mode |
| DQ0–DQ15 | Bidirectional Data I/O | 16-bit parallel data path; supports byte-level access via BHE/ BLE |
| WE, CE, OE | Control Inputs | Active-low write, chip enable, and output enable signals - standard SRAM interface timing |
| BHE, BLE | Byte Enable Inputs | Enable upper/lower 8 bits of DQ bus independently in ×16 configuration |
| HSB | Hardware Store Busy | Open-drain status indicator (LOW = STORE/RECALL active); also accepts LOW pulse to trigger hardware STORE |
| VCAP | AutoStore Capacitor Terminal | Connects external 0.1 µF capacitor to sustain STORE operation during VCC collapse |
| VCC, VCCQ, VSS | Power Supplies | VCC = 3.3 V core; VCCQ = 1.8 V I/O; VSS = common ground reference |
Key Features
| Feature | Design Value |
|---|---|
| QuantumTrap Non-Volatile Cell | Enables true parallel STORE/RECALL across full memory array without block erasure overhead |
| AutoStore on Power-Down | Eliminates need for external battery or supercapacitor backup; relies solely on VCAP charge |
| Write-Before-Store Logic | Prevents spurious STOREs by requiring at least one prior SRAM write - reduces wear on non-volatile elements |
| Software STORE Sequence | Six-address read sequence enables STORE initiation from firmware without hardware signal assertion |
| HSB Dual-Function Pin | Combines hardware trigger input and real-time status feedback in single pin - simplifies PCB routing |
Applications
| Industrial PLC Data Logging | Medical Device Parameter Storage |
|---|---|
Use Scenario: Storing runtime configuration, calibration offsets, and alarm history in programmable logic controllers during mains failure. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer holding critical state data between power cycles; replaces battery-backed SRAM. Use Value: Eliminates battery maintenance and leakage risk while guaranteeing 20-year data retention and 1M STORE endurance under frequent power-loss events. | Use Scenario: Preserving patient-specific therapy settings and usage logs in portable infusion pumps and diagnostic monitors. IC Role / Device Role / Timing Role: High-reliability memory for FDA-regulated data persistence; supports rapid RECALL at power-on for immediate device readiness. Use Value: Meets IEC 62304 data integrity requirements with zero external components-no battery, no EEPROM wear-out, no firmware overhead for wear leveling. |
| Automotive ADAS Event Recorder | Telecom Base Station Configuration |
Use Scenario: Capturing sensor fusion timestamps and fault codes in collision avoidance ECUs during ignition cycling or brownout conditions. IC Role / Device Role / Timing Role: Fast-access memory with deterministic STORE latency (< 10 ms) triggered by VCC dip detection. Use Value: Ensures crash-critical data capture even during <100 ms power interruption - verified at –40 °C to +85 °C. | Use Scenario: Holding FPGA bitstream metadata, radio channel maps, and security keys in 5G small cell radios during firmware updates or thermal shutdown. IC Role / Device Role / Timing Role: Configuration memory with software-controlled STORE to prevent corruption during partial reconfiguration. Use Value: Enables atomic update of critical parameters using six-address sequence - avoids partial writes and eliminates need for external NVM management logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FM24V10-G | 4-Mbit F-RAM (256 K × 16); unlimited endurance; no VCAP required; 45 ns access | No AutoStore on power loss - requires external power-fail detection and controlled STORE command | Choose for ultra-high write-cycle applications where power-fail detection circuitry already exists |
| MB85RS4MT | 4-Mbit FRAM (256 K × 16); 1.8 V only; 25 ns access; no VCAP; SPI interface | Serial interface - incompatible with parallel SRAM bus; no hardware STORE/RECALL pins | Choose only if system uses SPI and can tolerate serialization overhead; not a pin-compatible replacement |
Compared with FM24V10-G and MB85RS4MT, CY14V104NA-BA25XIT uniquely delivers hands-off AutoStore using only VCAP, full SRAM timing compatibility, and dual-mode (hardware/software) STORE control - making it optimal for legacy SRAM drop-in upgrades requiring zero firmware or board changes.
Availability
CY14V104NA-BA25XIT is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device parameter storage, automotive ADAS event recorders, and telecom base station configuration requiring stable component supply and long-term lifecycle support.
Supply support for CY14V104NA-BA25XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, delivering power systems, sensors, microcontrollers, and memory solutions for industrial, automotive, and IoT applications.
CY14V104NA belongs to Infineon's nvSRAM product line, designed specifically to replace battery-backed SRAM in mission-critical systems where reliability, data integrity, and regulatory compliance outweigh cost-per-bit considerations.
FAQ
What is the minimum VCAP capacitance required for reliable AutoStore operation?
The datasheet specifies a nominal 0.1 µF ceramic capacitor on VCAP, rated for ≥10 V, placed within 5 mm of the device. This value ensures sufficient energy to complete one STORE cycle when VCC drops from 3.0 V to VSWITCH (2.7 V). Larger values extend margin but do not improve functionality; smaller values risk incomplete STORE and data corruption.
Can CY14V104NA-BA25XIT operate with VCCQ = 1.8 V and VCC = 3.3 V simultaneously?
Yes - the device is explicitly characterized for independent 1.65–1.95 V I/O supply (VCCQ) and 3.0–3.6 V core supply (VCC). This dual-rail architecture allows direct interfacing with 1.8 V microcontrollers while maintaining robust internal SRAM operation at 3.3 V, eliminating level-shifter requirements in mixed-voltage designs.
How does the write-before-store logic affect real-time data logging?
This logic prevents unintended STOREs during idle periods or read-only operation. For continuous logging, at least one write must occur before power loss to activate AutoStore. Firmware should perform a dummy write (e.g., incrementing a counter) after each valid data update to ensure STORE eligibility - adding negligible overhead versus unconditional STORE execution.
Is the HSB pin mandatory for system integration?
No - HSB is optional. If unused, it may be left unconnected. However, monitoring HSB provides precise STORE/RECALL completion timing (tHRECALL = 10 ms max), enabling firmware to resume operations safely. Omitting HSB requires fixed delay-based synchronization, increasing worst-case boot time and reducing determinism in time-critical applications.
CY14V104NA-BA25XIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (6x10)
CY14V104NA-BA25XIT FAQ
1.How can I place an order for CY14V104NA-BA25XIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14V104NA-BA25XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14V104NA-BA25XIT reliable?
The price and inventory of CY14V104NA-BA25XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14V104NA-BA25XIT is usually 5 days.
3.What payment methods are accepted for CY14V104NA-BA25XIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14V104NA-BA25XIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14V104NA-BA25XIT?
CY14V104NA-BA25XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14V104NA-BA25XIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14V104NA-BA25XIT?
For technical support, including CY14V104NA-BA25XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14V104NA-BA25XIT requirements.
6.How does Aetrix verify that CY14V104NA-BA25XIT is sourced from the original manufacturer or authorized distributors?
All CY14V104NA-BA25XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14V104NA-BA25XIT meets industry standards.
7.What is the process for return or replacement of CY14V104NA-BA25XIT?
All CY14V104NA-BA25XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14V104NA-BA25XIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14V104NA-BA25XIT part is unused and in its original packaging.
Return procedure for CY14V104NA-BA25XIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY14V104NA-BA25XIT Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

