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Infineon Technologies CY14V104NA-BA45XI

Part No.:
CY14V104NA-BA45XI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixCY14V104NA-BA45XI.pdf
Description:
IC NVSRAM 4MBIT PARALLEL 48FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,581

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Product details

Overview

CY14V104NA-BA45XI from Infineon Technologies (formerly Cypress) is a 4-Mbit non-volatile SRAM organized as 256 K × 16, featuring QuantumTrap™ non-volatile storage, 45 ns access time, 3.0–3.6 V core supply, and industrial temperature range (–40°C to +85°C). It performs automatic STORE on power-down using an external VCAP capacitor and supports software/hardware-initiated STORE/RECALL operations - deployed in industrial PLCs, medical data loggers, and telecom base station control memory where power-fail resilience is critical.

For engineers reviewing the CY14V104NA-BA45XI datasheet, CY14V104NA-BA45XI pinout, CY14V104NA-BA45XI application, or CY14V104NA-BA45XI equivalent, key selection considerations include ×16 bus interface compatibility, VCAP-based AutoStore timing margin, HSB-driven hardware store synchronization, and BHE/BLE byte enable behavior in 16-bit systems.

Technical Context

This nvSRAM integrates standard SRAM cells with parallel QuantumTrap non-volatile elements per cell, enabling simultaneous STORE/RECALL across all 256 K words without block erasure. The architecture decouples volatile read/write performance (infinite cycles) from non-volatile endurance (1 million STOREs, 20-year retention).

STORE is triggered by three independent mechanisms: AutoStore on VCC drop below VSWITCH (using charge from VCAP), hardware STORE via HSB pin assertion, or software STORE via six-address sequence. RECALL occurs automatically at power-up or via software command, with HSB signaling busy status during both operations.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4 Mbit (256 K × 16 organization), directly usable as 16-bit wide memory interface without external data multiplexing.
Access Time 45 ns max - defines minimum clock period for synchronous bus interfaces; meets timing for legacy microcontrollers with ≤22 MHz bus clocks.
VCC Core Range 3.0 V to 3.6 V - compatible with standard 3.3 V logic rails; requires no level-shifting for MCU I/O domains.
VCCQ I/O Range 1.65 V to 1.95 V - supports low-voltage 1.8 V I/O interfaces; mandates separate 1.8 V supply rail for DQ pins.
STORE Endurance 1 million cycles - sets maximum expected field lifetime for applications with daily power-cycle events.
Data Retention 20 years at +85°C - guarantees non-volatile data integrity over full industrial temperature operating life without refresh.
AutoStore Trigger VCC < VSWITCH (typ. 2.7 V) - initiates STORE before system brownout, requiring ≥0.1 µF VCAP capacitor charged to ≥2.7 V.
Operating Temperature –40°C to +85°C - validated for deployment in uncontrolled industrial enclosures and outdoor telecom cabinets.

Pinout & Package

48-ball fine-pitch ball grid array (FBGA) package, 6 mm × 8 mm body, 0.8 mm pitch, RoHS-compliant, lead-free finish. Pinout optimized for ×16 operation with dedicated BHE/BLE controls and dual VCCQ supplies for I/O domain isolation.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Input 18-bit address bus for 256 K-word addressing; A17 is MSB; no A18 used in ×16 mode.
DQ0–DQ15 Bidirectional Data I/O 16-bit parallel data path; tri-stated when OE HIGH or during STORE/RECALL.
WE, CE, OE Control Inputs All active-low; CE enables chip select, WE gates write strobe, OE enables output drivers - standard SRAM timing interface.
BHE, BLE Byte Enable Inputs Active-low controls for upper/lower 8 bits of DQ bus; required for partial-word writes in ×16 configuration.
HSB Hardware Store Busy Open-drain status pin: driven LOW during STORE/RECALL; pulled HIGH internally (100 kΩ) when idle; used for hardware handshake.
VCAP AutoStore Capacitor Supply Internal regulator charges external 0.1 µF capacitor; provides energy for single STORE during VCC collapse - must be connected for AutoStore.
VCC Core Power Supply 3.0–3.6 V supply for SRAM core and QuantumTrap logic; decoupling required within 10 mm of pin.
VCCQ I/O Power Supply 1.65–1.95 V supply for DQ, A, and control pins; isolated from VCC to prevent noise coupling into core logic.

Key Features

Feature Design Value
QuantumTrap Non-Volatile Cell Per-cell embedded non-volatility eliminates need for external EEPROM/NAND and associated wear-leveling firmware.
Hardware STORE via HSB Pin Enables deterministic, externally synchronized STORE initiation - critical for systems requiring precise power-fail capture timing.
Software STORE Sequence Six-address read sequence allows STORE triggering from any processor without dedicated control lines - ideal for pin-constrained designs.
AutoStore on Power-Down Zero-software, zero-pin power-fail response using VCAP capacitor - ensures data persistence even during sudden AC loss or battery disconnect.
Independent VCC/VCCQ Rails Allows core and I/O domains to operate at different voltages (e.g., 3.3 V core / 1.8 V I/O), simplifying mixed-voltage system integration.

Applications

Industrial Programmable Logic Controller (PLC) Medical Patient Monitor Data Logger

Use Scenario: Stores real-time sensor readings and alarm thresholds during continuous 24/7 operation in factory-floor PLCs subject to frequent power fluctuations.

IC Role / Device Role / Timing Role: Non-volatile working memory that retains last valid state and configuration after unexpected shutdown - replaces battery-backed SRAM.

Use Value: Eliminates battery replacement maintenance and avoids data loss during brownouts, meeting IEC 61131-2 reliability requirements.

Use Scenario: Captures ECG waveforms and vital sign timestamps in portable patient monitors powered by rechargeable Li-ion batteries.

IC Role / Device Role / Timing Role: High-speed buffer with guaranteed STORE on battery undervoltage detection - acts as fail-safe memory before shutdown.

Use Value: Ensures complete waveform capture up to final millisecond of power loss, satisfying FDA 21 CFR Part 11 data integrity mandates.

Telecom Base Station Control Unit Automotive ADAS Camera Module

Use Scenario: Holds FPGA configuration bitstreams and runtime calibration tables in remote radio units exposed to wide ambient temperature swings.

IC Role / Device Role / Timing Role: Configuration and state memory with 20-year data retention at +85°C - survives extended shelf life and field deployment.

Use Value: Prevents field failures due to configuration corruption; removes need for periodic recalibration or reprogramming.

Use Scenario: Stores lens calibration coefficients and image processing parameters in automotive surround-view camera modules operating in engine bay environments.

IC Role / Device Role / Timing Role: Radiation-tolerant, high-temp non-volatile memory retaining critical vision system parameters across thermal cycling and ignition cycles.

Use Value: Maintains pixel alignment accuracy over 15+ year vehicle lifetime without degradation - compliant with ISO 26262 ASIL-B requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY14V104LA-BA45XI Same die, ×8 organization (512 K × 8); shares identical timing, VCAP, and STORE/RECALL behavior. Requires 8-bit data bus; occupies same FBGA footprint but uses different DQ pin mapping (DQ0–DQ7 only). Select when system uses 8-bit microcontroller or legacy bus architecture with no 16-bit expansion path.
FM24V04-G F-RAM-based 4-Mbit (512 K × 8); unlimited STORE endurance; no VCAP capacitor required; 100 ns access time. Lower power STORE; no power-loss timing window dependency; but slower access limits use with high-speed processors. Prefer for ultra-low-power, high-cycle-count logging where 45 ns timing is not required and VCAP layout complexity must be avoided.

Compared with CY14V104LA-BA45XI, the CY14V104NA-BA45XI delivers higher bandwidth via 16-bit interface and reduces address bus width by one line, while FM24V04-G trades speed and voltage-margin robustness for infinite endurance and simpler power design - choice depends on bus width, timing budget, and failure-mode priorities.

Availability

CY14V104NA-BA45XI is available at Aetrix Electronics and suitable for industrial automation controllers, medical data loggers, telecom infrastructure units, and automotive ADAS modules requiring stable component supply with guaranteed long-term lifecycle support.

Supply support for CY14V104NA-BA45XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions - formed through acquisition of Cypress Semiconductor in 2020.

CY14V104NA belongs to Infineon's nvSRAM product line, engineered specifically for mission-critical applications demanding instantaneous, deterministic non-volatile storage without batteries or external controllers.

FAQ

Is a VCAP capacitor mandatory for CY14V104NA-BA45XI operation?

Yes - a minimum 0.1 µF ceramic capacitor must be connected between VCAP and VSS to enable AutoStore. Without it, power-loss STORE fails, risking data corruption. The device draws charge from VCC during normal operation to pre-charge VCAP; no external charging circuitry is needed.

Can CY14V104NA-BA45XI operate with VCC = 3.3 V and VCCQ = 1.8 V simultaneously?

Yes - the device is explicitly rated for VCC = 3.0–3.6 V and VCCQ = 1.65–1.95 V. This dual-rail design allows clean separation of core logic (3.3 V) and I/O interface (1.8 V), reducing noise coupling and enabling direct connection to 1.8 V FPGAs or application processors.

What happens if HSB is left unconnected during normal operation?

HSB may float HIGH due to its internal 100 kΩ pull-up resistor, which is acceptable if hardware STORE is unused. However, for reliable operation, tie HSB to VCCQ via a 10 kΩ resistor if not actively driven - prevents noise-induced false STORE triggers during ESD events or board-level transients.

Does software STORE require the device to be in a specific state before execution?

Yes - software STORE requires CE to be asserted and six consecutive read cycles executed at exact addresses (0x0000, 0x0001, 0x0002, 0x0003, 0x0004, 0x0005) within tSSW (max 100 ns) of each other. No prior wait-state or register setup is needed, but the sequence must be uninterrupted by CE deassertion or bus contention.

CY14V104NA-BA45XI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-FBGA (6x10)

CY14V104NA-BA45XI FAQ

1.How can I place an order for CY14V104NA-BA45XI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14V104NA-BA45XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14V104NA-BA45XI reliable?

The price and inventory of CY14V104NA-BA45XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14V104NA-BA45XI is usually 5 days.

3.What payment methods are accepted for CY14V104NA-BA45XI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14V104NA-BA45XI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14V104NA-BA45XI?

CY14V104NA-BA45XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14V104NA-BA45XI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14V104NA-BA45XI?

For technical support, including CY14V104NA-BA45XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14V104NA-BA45XI requirements.

6.How does Aetrix verify that CY14V104NA-BA45XI is sourced from the original manufacturer or authorized distributors?

All CY14V104NA-BA45XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14V104NA-BA45XI meets industry standards.

7.What is the process for return or replacement of CY14V104NA-BA45XI?

All CY14V104NA-BA45XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14V104NA-BA45XI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14V104NA-BA45XI part is unused and in its original packaging.

Return procedure for CY14V104NA-BA45XI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY14V104NA-BA45XI Tags

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