Infineon Technologies CY14V104NA-BA45XIT

Overview

CY14V104NA-BA45XIT from Infineon Technologies (formerly Cypress) is a 4-Mbit non-volatile SRAM organized as 256 K × 16, featuring QuantumTrap® technology for automatic STORE on power-down, software-controlled STORE/RECALL, and infinite SRAM read/write cycles. It operates with core V_CC = 3.0–3.6 V, I/O V_CCQ = 1.65–1.95 V, supports industrial temperature range (–40°C to +85°C), and uses a 48-ball FBGA package. It is deployed in industrial PLCs, medical data loggers, and telecom base station control modules requiring persistent memory without external backup.

For engineers reviewing the CY14V104NA-BA45XIT datasheet, CY14V104NA-BA45XIT pinout, CY14V104NA-BA45XIT application, or CY14V104NA-BA45XIT equivalent, key selection criteria include ×16 bus width support, hardware STORE via HSB pin, AutoStore capacitor interface (VCAP), 45 ns access time, and 1-million STORE endurance with 20-year data retention.

Technical Context

The CY14V104NA integrates a standard fast SRAM array (2048 × 2048) with parallel QuantumTrap non-volatile elements per cell, enabling simultaneous STORE/RECALL across all locations. Its dual-power architecture separates core logic (V_CC) from I/O buffers (V_CCQ), supporting mixed-voltage system interfacing.

STORE is triggered by three independent mechanisms: AutoStore (power-loss detection via V_CC monitoring and VCAP discharge), Hardware STORE (HSB pin assertion), or Software STORE (six-address sequence). RECALL occurs automatically at power-up or via software command, with HSB pin providing real-time busy status during both operations.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), 6 mm × 8 mm, 0.8 mm pitch, RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile SRAM applications.

Compared with STK14C88-3A50I and FM24V10-G, CY14V104NA-BA45XIT uniquely combines ×16 bus width, dedicated HSB pin for hardware-initiated STORE, dual-voltage I/O, and FBGA packaging - making it optimal for space-constrained, high-reliability industrial controllers requiring deterministic non-volatile save behavior.

Availability

CY14V104NA-BA45XIT is available at Aetrix Electronics and suitable for industrial programmable logic controllers, medical data loggers, and telecom base station control modules requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY14V104NA-BA45XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions, with strong heritage in industrial and mission-critical applications.

CY14V104NA belongs to Infineon's nvSRAM product line, designed specifically for systems needing SRAM speed with EEPROM-like non-volatility - eliminating batteries, simplifying board layout, and ensuring data integrity across power transitions.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The datasheet specifies a 0.1 µF ceramic capacitor rated for ≥10 V, placed within 10 mm of the VCAP pin with low-inductance routing. Using a smaller or higher-ESR capacitor may cause incomplete STORE during rapid V_CC collapse, risking data loss. The internal regulator charges VCAP to ~2.5 V during normal operation, and this stored energy must sustain the full STORE sequence (t_STORE ≤ 20 ms).

Can CY14V104NA-BA45XIT be used in a ×8 configuration?

No - CY14V104NA is factory-configured exclusively for 256 K × 16 organization. The CY14V104LA variant supports 512 K × 8. Address pins A0–A17 and data pins DQ0–DQ15 are hardwired for ×16 operation; attempting ×8 use results in undefined behavior and violates the device's pinout and timing specifications.

How does the HSB pin behave during a Software STORE cycle?

During Software STORE, HSB is driven LOW immediately upon initiation and remains LOW until the entire STORE completes (typically ≤20 ms). It returns HIGH only after non-volatile programming finishes and the device re-enables SRAM access. This provides unambiguous hardware-level status visibility without polling registers or relying on software timeouts.

Is BHE/ BLE functionality required when using only the lower byte (DQ0–DQ7) in ×16 mode?

Yes - even when accessing only DQ0–DQ7, BLE must be asserted LOW to enable the lower byte drivers; BHE should be held HIGH (inactive) to prevent contention. Leaving BLE floating or HIGH disables DQ0–DQ7 outputs, resulting in high-impedance states during reads and failed writes - a common cause of initialization failure in FPGA-based designs.