Infineon Technologies CY14V116G7-BZ30XI

Overview

CY14V116G7-BZ30XI from Infineon Technologies (formerly Cypress) is a 16-Mbit nonvolatile SRAM with asynchronous NAND interface, designed for persistent data storage in power-loss-prone systems. It delivers 33 MT/s I/O performance, supports ×8/×16 bus widths (528 Mbps max throughput), uses QuantumTrap SONOS nonvolatile elements, and operates across –40 °C to +85 °C with core VCC = 2.7–3.6 V and I/O VCCQ = 1.70–1.95 V.

For engineers reviewing the CY14V116G7-BZ30XI datasheet, CY14V116G7-BZ30XI pinout, CY14V116G7-BZ30XI application, or CY14V116G7-BZ30XI equivalent, key selection criteria include AutoStore on power-down via VCAP, software/hardware STORE/RECALL control, NAND-compatible command set (e.g., 80h/10h burst write, FCh software RECALL), and industrial-grade data retention (20 years at 85 °C).

Technical Context

This nvSRAM implements a monolithic architecture integrating SRAM cells with embedded Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) nonvolatile elements. It uses a highly multiplexed DQ bus: all commands and addresses are latched via DQ[7:0], while DQ[15:0] carries data in ×16 mode - upper bits DQ[15:8] are don't-care during address/command cycles.

Control logic relies on five dedicated pins (CLE, ALE, CE, RE, WE) plus auxiliary signals (WP, R/B, HSB) to manage NAND-style bus states - including Command Latch, Address Input, Read, and Write cycles - aligned with ONFI 1.0 timing conventions and supporting tRECALL ≤ 25 ms and tSTORE ≤ 20 ms.

Key Specifications

Pinout & Package

165-ball fine-pitch ball grid array (FBGA) package with 0.8 mm pitch, optimized for high-density PCB layouts and thermal dissipation in industrial modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile memory applications.

Compared with FM16W08 and AT25SF128A, CY14V116G7-BZ30XI uniquely combines true SRAM speed, NAND interface compatibility, and autonomous STORE/RECALL - making it irreplaceable in systems requiring deterministic, battery-free nonvolatility with zero software overhead during power failure.

Availability

CY14V116G7-BZ30XI is available at Aetrix Electronics and suitable for industrial data loggers, automotive telematics control units, factory automation PLCs, and medical imaging systems requiring stable component supply across extended product lifecycles.

Supply support for CY14V116G7-BZ30XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with emphasis on reliability and industrial longevity.

This device belongs to Infineon's nvSRAM product line - engineered specifically for mission-critical applications where data integrity must survive uncontrolled power loss without external energy storage or complex firmware intervention.

FAQ

What is the role of the VCAP pin and what capacitor value is required?

The VCAP pin connects an external capacitor that supplies hold-up energy during VCC collapse to complete the STORE operation. A 100 µF tantalum or polymer capacitor rated ≥6.3 V is specified in the datasheet; values below 47 µF risk incomplete STORE under worst-case voltage droop profiles. The capacitor must be placed within 5 mm of VCAP and VSS pins with low-inductance routing.

How does the ×16 interface affect pin usage compared to ×8 mode?

In ×16 mode, DQ[15:0] carry data during read/write, but DQ[15:8] are ignored during command and address cycles - only DQ[7:0] are used for those functions. The FBGA pinout physically supports both modes; no hardware change is needed. Software must configure bus width via status register bit S[1] and ensure host controller asserts correct DQ width during data phases.

Can CY14V116G7-BZ30XI replace standard NAND Flash in existing designs?

No - it is not a NAND Flash replacement. While it shares the NAND interface protocol and pinout conventions, it functions as a nonvolatile SRAM: it offers random-access read/write with no block erasure, wear leveling, or bad-block management. It targets applications needing SRAM speed + nonvolatility, not high-density sequential storage.

What happens during power-up if the VCAP capacitor is undersized or missing?

If VCAP is missing or too small, AutoStore will fail during power-down, resulting in loss of the latest SRAM data. During power-up, RECALL still executes normally from previously successful STORE operations. The R/B pin remains LOW for tRECALL (≤25 ms) regardless - but corrupted or incomplete STOREs leave stale data in SONOS, which RECALL then loads into SRAM.