Infineon Technologies CY14V116G7-BZ30XIT

Overview

CY14V116G7-BZ30XIT from Infineon Technologies (formerly Cypress) is a 16-Mbit nonvolatile static RAM with asynchronous NAND interface, designed for data logging and power-loss-critical storage in industrial controllers and network infrastructure. It delivers 33 MT/s per I/O, supports ×8/×16 bus widths (528 Mbps max throughput), features AutoStore on power-down via VCAP capacitor, and operates across –40 °C to +85 °C.

For engineers reviewing the CY14V116G7-BZ30XIT datasheet, CY14V116G7-BZ30XIT pinout, CY14V116G7-BZ30XIT application, or CY14V116G7-BZ30XIT equivalent, key selection criteria include NAND-compatible command set (ONFI 1.0 aligned), dual-voltage operation (VCC = 2.7–3.6 V, VCCQ = 1.70–1.95 V), hardware STORE trigger (HSB pin), software RECALL (FCh), and 20-year data retention at 85 °C.

Technical Context

The device implements a single-channel asynchronous NAND interface with five-cycle address input (DQ[7:0]), command latching via CLE, and address latching via ALE - all synchronized to WE edges. It uses multiplexed DQ[15:0] for ×16 mode (DQ[15:8] active only during data transfer), while DQ[7:0] handles all commands and addresses regardless of bus width.

Internal architecture integrates SRAM core with QuantumTrap nonvolatile elements based on SONOS technology, enabling infinite SRAM read/write cycles and 1 million STORE cycles. Power-loss protection relies on external VCAP capacitor, triggering hands-off STORE when VCC drops below threshold; RECALL occurs automatically on power-up or via FCh command.

Key Specifications

Pinout & Package

165-ball fine-pitch ball grid array (FBGA) package, 11 × 13 mm body, 0.8 mm pitch, RoHS-compliant. Pinout differs between ×8 and ×16 configurations; this part supports both modes with shared control pins and multiplexed DQ bus.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile RAM applications.

Compared with FM16W08 and AS1C16M16P-33BIN, CY14V116G7-BZ30XIT uniquely combines full NAND protocol compliance, ×16 throughput, and capacitor-only power-loss protection - making it the sole option for retrofitting legacy NAND-based systems with nonvolatile SRAM functionality without controller redesign.

Availability

CY14V116G7-BZ30XIT is available at Aetrix Electronics and suitable for industrial PLC data logging, telecom line card buffering, railway signaling state memory, and medical imaging boot loader caching requiring stable component supply and long-term lifecycle assurance.

Supply support for CY14V116G7-BZ30XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions - formed through the acquisition of Cypress Semiconductor in 2020.

CY14V116G7-BZ30XIT belongs to Infineon's nvSRAM product line, engineered specifically for mission-critical data retention in environments where power instability, extended temperature operation, and NAND-compatible integration are mandatory design constraints.

FAQ

What is the role of the VCAP capacitor, and what value is recommended?

The VCAP capacitor supplies hold-up energy during VCC collapse to complete the STORE operation from SRAM to QuantumTrap nonvolatile elements. Infineon specifies a 100–220 µF tantalum capacitor with ≤100 mΩ ESR, mounted within 5 mm of the VCAP pin. Typical STORE duration is 15–18 ms; undersized capacitors risk incomplete STORE and data corruption.

How does the ×16 interface affect address and command transmission?

In ×16 mode, DQ[15:8] carry data only; all commands and five-cycle addresses are transmitted exclusively on DQ[7:0], identical to ×8 mode. This preserves software compatibility across bus widths. The host must ignore DQ[15:8] during command/address cycles and enable them only during data read/write phases.

Can CY14V116G7-BZ30XIT be used as a direct replacement for standard NAND Flash?

No - it is not a drop-in NAND Flash replacement. While it shares the ONFI 1.0 command set and timing model, it lacks NAND-specific features like block erasure, bad block management, and wear leveling. It functions as a nonvolatile SRAM with NAND-style access, requiring host-side logic to manage STORE/RECALL rather than flash translation layer (FTL).

What is the function of the HSB pin, and how is it typically driven?

HSB (Hardware STORE) is an active-low input that triggers immediate nonvolatile STORE independent of software state or bus activity. It is typically driven by a discrete comparator monitoring VCC, or integrated into PMIC power-fail outputs. Pulling HSB LOW for ≥100 ns initiates STORE; the device asserts R/B LOW until completion (~15 ms).