Infineon Technologies CY14V116N-BZ30XI

Overview

CY14V116N-BZ30XI from Infineon Technologies (formerly Cypress) is a 16-Mbit nonvolatile SRAM (nvSRAM) with QuantumTrap technology, organized as 1024K × 16, 30-ns access time, 2.7–3.6 V core supply, and industrial –40 °C to +85 °C operation. It performs automatic STORE on power-down using an external VCAP capacitor and supports software/hardware-controlled STORE/RECALL for mission-critical data retention in systems requiring zero-battery backup.

For engineers reviewing the CY14V116N-BZ30XI datasheet, CY14V116N-BZ30XI pinout, CY14V116N-BZ30XI application, or CY14V116N-BZ30XI equivalent, key selection considerations include AutoStore timing under voltage droop, HSB-driven hardware STORE latency, VCCQ I/O voltage compatibility (1.65–1.95 V), and FBGA-165 package thermal performance in high-reliability embedded control.

Technical Context

The CY14V116N-BZ30XI integrates parallel SRAM and QuantumTrap nonvolatile storage per cell, enabling simultaneous STORE/RECALL across all 1024K words. Its dual-power architecture separates core logic (VCC) from I/O buffers (VCCQ), supporting mixed-voltage system interfacing while maintaining 30-ns SRAM read/write timing.

AutoStore activation relies on internal VSWITCH detection (≈2.0 V) and regulated VCAP discharge (VVCAP ≈ 2.5 V), with STORE completion guaranteed only when ≥0.1 µF capacitor is connected. The HSB pin serves both as initiation trigger and open-drain busy indicator, with tHHHD (≤100 ns) high-pulse post-STORE and tLZHSB (≤150 ns) access inhibition window.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch BGA (FBGA), 11 mm × 13 mm, 0.8 mm pitch, RoHS-compliant. Thermal resistance θJA = 32 °C/W (JEDEC standard board).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with STK14C88-3A55I and FM24V10-G, CY14V116N-BZ30XI uniquely delivers 30-ns speed with integrated AutoStore, HSB-triggered STORE, and dual-supply flexibility-enabling simpler, more reliable fail-safe memory in safety-critical industrial controllers.

Availability

CY14V116N-BZ30XI is available at Aetrix Electronics and suitable for industrial PLC data loggers, medical infusion pump controllers, avionics flight recorder buffers, and railway signaling interlocking units requiring stable component supply with guaranteed 20-year data retention and zero-battery reliability.

Supply support for CY14V116N-BZ30XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-reliability memory solutions.

CY14V116N belongs to Infineon's nvSRAM product line, engineered specifically for deterministic, battery-free nonvolatile storage in safety-critical infrastructure where data integrity must survive uncontrolled power loss.

FAQ

What capacitor value is required on the VCAP pin for reliable AutoStore operation?

A minimum 0.1 µF X7R ceramic capacitor rated for ≥10 V must be placed between VCAP and VSS, located within 5 mm of the package. This value ensures sufficient charge to complete STORE within tHSTORE (≤15 ms) when VCC drops below VSWITCH (≈2.0 V). Larger capacitors (e.g., 1 µF) extend brownout immunity but do not reduce STORE time.

Can CY14V116N-BZ30XI operate with VCC = 3.3 V and VCCQ = 1.8 V simultaneously?

Yes. The device is fully specified for VCC = 2.7–3.6 V and VCCQ = 1.65–1.95 V concurrently. This allows direct connection to a 3.3-V system rail for core logic and a separate 1.8-V FPGA I/O bank for DQ lines, eliminating level-shifter components and associated signal integrity risks.

How does the write-latch mechanism prevent unintended STORE operations?

The internal write latch sets only after the first SRAM write since the last STORE or RECALL. AutoStore and HSB-triggered STORE are disabled until this latch is set, preventing spurious nonvolatile writes during power-up initialization or idle periods. Software STORE bypasses this latch, enabling forced save regardless of prior writes.

Is the HSB pin mandatory for system integration?

No. HSB may be left unconnected if hardware STORE triggering and busy indication are not required. In that case, STORE relies solely on AutoStore (power-down) or software sequence. However, omitting HSB forfeits deterministic, firmware-controlled STORE initiation and real-time STORE-in-progress visibility for system-level fault handling.