Infineon Technologies CY14V116N-BZ30XIT

Overview

CY14V116N-BZ30XIT from Infineon Technologies (formerly Cypress) is a 16-Mbit nonvolatile SRAM organized as 1024K × 16, featuring QuantumTrap nonvolatile storage, 30-ns access time, dual-supply operation (VCC = 2.7–3.6 V, VCCQ = 1.65–1.95 V), and industrial temperature range (–40 °C to +85 °C). It enables deterministic data retention in power-loss scenarios for mission-critical industrial control and metering systems.

For engineers reviewing the CY14V116N-BZ30XIT datasheet, CY14V116N-BZ30XIT pinout, CY14V116N-BZ30XIT application, or CY14V116N-BZ30XIT equivalent, key selection criteria include AutoStore timing under voltage droop, HSB-controlled STORE latency, software RECALL compatibility with legacy firmware, and FBGA-165 thermal performance in high-density PCB layouts.

Technical Context

The CY14V116N-BZ30XIT integrates parallel SRAM and QuantumTrap nonvolatile cells per memory location, enabling simultaneous STORE/RECALL across all 1024K words. Its STORE operation is triggered by power-down (via VCAP discharge), hardware signal (HSB pin), or software address sequence - each initiating full-array transfer without CPU intervention.

It supports three distinct STORE initiation modes with shared completion signaling via open-drain HSB, and implements write-latch gating to prevent spurious STOREs. RECALL occurs automatically on VCC rise above VSWITCH (≈2.0 V), with tHRECALL ≤ 20 ms, and is also software-initiable independent of power state.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch BGA (FBGA), 13 mm × 11 mm, 0.8 mm pitch, RoHS-compliant. Thermal pad exposed on bottom for enhanced heat dissipation in high-duty-cycle applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with STK14C88-3AJ5F and FM22L16-55-TG, CY14V116N-BZ30XIT uniquely delivers 16-Mbit density with hardware-gated STORE/RECALL, dual-supply flexibility, and 20-year data retention - making it optimal for high-reliability, high-throughput industrial memory buffering where power resilience is non-negotiable.

Availability

CY14V116N-BZ30XIT is available at Aetrix Electronics and suitable for smart metering, industrial PLCs, railway signaling, and medical diagnostics requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for CY14V116N-BZ30XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with emphasis on reliability and industrial longevity.

CY14V116N belongs to Infineon's nvSRAM product line, designed specifically for applications demanding zero-battery, zero-capacitor-dependent nonvolatile data retention during unpredictable power interruptions in harsh environments.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14V116N-BZ30XIT requires a minimum 0.1 µF ceramic capacitor rated for ≥10 V on the VCAP pin. This value ensures sufficient charge to complete a full 16-Mbit STORE within the specified tSTORE max of 25 ms when VCC drops below VSWITCH (≈2.0 V). Lower capacitance risks incomplete STORE and data corruption.

Can the HSB pin be left unconnected if hardware STORE is not used?

Yes - the HSB pin may be left floating if hardware-initiated STORE is unused. The device defaults to AutoStore on power-down and software STORE only. No pull-up or pull-down is required, as HSB has an internal 100 kΩ weak pull-up that maintains HIGH state during normal operation and after STORE completion.

Does the CY14V116N-BZ30XIT support partial-byte writes using BHE/BLE?

Yes - BHE (active-low) enables upper byte DQ15–DQ8, and BLE (active-low) enables lower byte DQ7–DQ0. When both are HIGH, all 16 bits are disabled; when only one is LOW, corresponding byte is written while the other remains unchanged, enabling true 8-bit granularity without read-modify-write overhead.

How does the write-latch mechanism prevent unintended STORE operations?

The internal write-latch is set only after at least one successful SRAM write cycle since the last STORE or RECALL. AutoStore and Hardware STORE are ignored unless this latch is asserted - preventing spurious nonvolatile writes during idle periods or noise-induced control glitches, thereby extending QuantumTrap endurance to its rated 1 million cycles.