Infineon Technologies CY14V256LA-BA35XI

Overview

CY14V256LA-BA35XI from Cypress Semiconductor is a 256-Kbit (32K × 8) nonvolatile static RAM with QuantumTrap technology, functioning as a drop-in SRAM replacement with autonomous power-loss data retention. It delivers 35 ns access time, supports dual-supply operation (VCC = 3.0–3.6 V, VCCQ = 1.65–1.95 V), and enables STORE/RECALL via AutoStore (capacitor-backed), hardware pin (HSB), or software sequence - deployed in industrial control modules requiring deterministic data persistence across uncontrolled power cycles.

For engineers reviewing the CY14V256LA-BA35XI datasheet, CY14V256LA-BA35XI pinout, CY14V256LA-BA35XI application, or CY14V256LA-BA35XI equivalent, key selection criteria include AutoStore capacitor sizing (0.1 µF), HSB timing constraints (tDELAY, tHHHD, tLZHSB), VCAP regulation behavior, and software STORE/RECALL address sequence integrity (six exact addresses, no intervening accesses).

Technical Context

The CY14V256LA-BA35XI integrates parallel SRAM and QuantumTrap nonvolatile cells per bit, enabling simultaneous STORE/RECALL across all 32K locations. Its architecture decouples volatile read/write (infinite cycles) from nonvolatile endurance (1 million STOREs, 20-year retention), with STORE triggered by VCC drop below VSWITCH, HSB assertion, or six-address software sequence.

It uses dual voltage domains: core logic and SRAM array powered by VCC (3.0–3.6 V), while I/O buffers operate from VCCQ (1.65–1.95 V) for compatibility with 1.8 V microcontrollers. The HSB pin serves both as input (to initiate STORE) and open-drain output (to signal STORE busy), with internal 100 kΩ weak pull-up and active-HIGH release after completion.

Key Specifications

Pinout & Package

48-ball fine-pitch BGA (6 × 10 mm, 1.2 mm height), RoHS-compliant, with 0.5 mm ball pitch. Pin layout optimized for compact industrial PCB layouts and thermal dissipation under continuous operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with STK14CA8-35F1I and FM24V256-G, the CY14V256LA-BA35XI uniquely combines capacitor-backed autonomy, industrial temperature rating, and software/hardware STORE flexibility - making it optimal for cost-sensitive, space-constrained, and maintenance-averse embedded systems where deterministic data capture at power loss is non-negotiable.

Availability

CY14V256LA-BA35XI is available at Aetrix Electronics and suitable for industrial control systems, smart metering platforms, and railway signaling equipment requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY14V256LA-BA35XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications, with global manufacturing and quality certifications.

The CY14V series targets mission-critical data retention in harsh environments, specifically engineered to replace battery-backed SRAM and extend product service life in infrastructure-grade electronics.

FAQ

What capacitor value and type is required for reliable AutoStore operation?

A 0.1 µF X7R ceramic capacitor must be placed between VCAP and VSS, located within 5 mm of the CY14V256LA-BA35XI package. This value is validated for 35 ns access time and 3.3 V operation; using smaller capacitance risks incomplete STORE and data corruption, while larger values delay power-down response without benefit.

Can the CY14V256LA-BA35XI be used with a 3.3 V-only system without VCCQ separation?

No - VCCQ must be supplied independently at 1.65–1.95 V. Connecting VCCQ to 3.3 V violates absolute maximum ratings and damages I/O buffers. Systems with 3.3 V logic require a dedicated 1.8 V LDO or DC-DC converter for VCCQ, even if VCC is also 3.3 V.

How does the device prevent unintended STORE during normal operation?

The CY14V256LA-BA35XI implements write-latch gating: AutoStore and Hardware STORE are ignored unless at least one SRAM write has occurred since the last STORE or RECALL. This prevents spurious writes due to noise on HSB or transient VCC dips that don't cross VSWITCH threshold.

Is the software STORE sequence compatible with memory-mapped I/O and cache coherency protocols?

Yes - the six-address sequence uses standard CE/OE-controlled reads and requires no special bus protocol. However, caches must be disabled or flushed before and after the sequence, and memory barriers must ensure strict ordering; interrupt masking is recommended during execution to prevent sequence interruption.