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Infineon Technologies CY14V256LA-BA35XIT

Part No.:
CY14V256LA-BA35XIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixCY14V256LA-BA35XIT.pdf
Description:
IC NVSRAM 256KBIT PAR 48FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,450

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Product details

Overview

CY14V256LA-BA35XIT from Cypress Semiconductor is a 256-Kbit (32K × 8) nonvolatile static RAM with QuantumTrap technology, functioning as a drop-in SRAM replacement with integrated nonvolatile storage. It delivers 35 ns access time, supports automatic STORE on power loss via VCAP capacitor, and enables software- or hardware-triggered STORE/RECALL cycles. Used in industrial control modules where data persistence across power cycles is critical.

For engineers reviewing the CY14V256LA-BA35XIT datasheet, CY14V256LA-BA35XIT pinout, CY14V256LA-BA35XIT application, or CY14V256LA-BA35XIT equivalent, key selection factors include AutoStore timing behavior, VCAP capacitance requirement (0.1 µF), HSB pin handshake protocol, and dual-supply operation (VCC = 3.0–3.6 V, VCCQ = 1.65–1.95 V).

Technical Context

The CY14V256LA-BA35XIT integrates standard SRAM array (512 × 512) with parallel QuantumTrap nonvolatile elements per cell, enabling simultaneous STORE/RECALL across all 32K bytes. Its architecture decouples volatile read/write (infinite cycles) from nonvolatile STORE (1 million cycles) and RECALL (infinite cycles), with no external controller required.

STORE is initiated by power-down voltage threshold detection (VSWITCH), HSB pin assertion, or six-address software sequence; RECALL occurs automatically at power-up or via identical six-address sequence. All STORE/RECALL operations inhibit SRAM access and drive HSB low until completion, with tSTORE = 20 ms max and tRECALL = 15 ms max.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Size 256 Kbit (32K × 8) - provides byte-wide interface compatible with 8-bit microcontrollers and legacy bus systems.
Access Time 35 ns - ensures compatibility with high-speed 25 MHz+ SRAM interfaces without wait states.
VCC Supply Range 3.0 V to 3.6 V - matches standard 3.3 V industrial logic rails with ±10% tolerance margin.
VCCQ Supply Range 1.65 V to 1.95 V - supports low-voltage I/O interfacing with modern SoCs and FPGAs.
Data Retention 20 years - guarantees long-term data integrity without refresh or backup power.
STORE Endurance 1 million cycles - sufficient for daily firmware/data logging in industrial PLCs over 27 years.
Operating Temperature −40 °C to +85 °C - qualified for extended industrial environments including factory automation and transportation systems.

Pinout & Package

48-ball fine-pitch ball grid array (FBGA), 6 × 10 array, 1.2 mm height, RoHS-compliant, Pb-free package (package code BA).

Pin/Terminal Circuit Role Design Meaning
A0–A14 Input 15-bit address bus selecting one of 32,768 memory locations; A14 is MSB for full 32K addressing.
DQ0–DQ7 Input/Output Bidirectional 8-bit data bus; tri-stated when OE = HIGH or during STORE/RECALL to prevent bus contention.
WE Input Write enable active LOW; must be held HIGH during AutoStore initiation and Software STORE sequence.
CE Input Chip enable active LOW; controls device selection and initiates CE-controlled read/write and Software STORE/RECALL sequences.
OE Input Output enable active LOW; enables DQ outputs during reads; used alongside CE in Software STORE/RECALL address sequences.
HSB Input/Output Hardware STORE Busy open-drain signal; driven LOW during STORE/RECALL to indicate busy state; pulled HIGH internally (100 kΩ) post-cycle.
VCAP Power supply AutoStore capacitor connection point; requires 0.1 µF ceramic capacitor to sustain STORE during VCC dropout.
VCC Power supply Core supply (3.0–3.6 V); powers SRAM array and QuantumTrap control logic; disconnected from VCAP at VSWITCH (~2.5 V).
VCCQ Power supply I/O supply (1.65–1.95 V); powers input buffers and DQ drivers independently for mixed-voltage system interfacing.
VSS Ground Common ground reference for core and I/O; two dedicated VSS balls ensure low-noise return path for STORE/RECALL current spikes.

Key Features

Feature Design Value
Hands-off AutoStore Eliminates external power-fail detection circuitry; uses internal VCC monitoring and VCAP charge to autonomously trigger STORE below VSWITCH.
Software STORE/RECALL Enables deterministic, timed nonvolatile operations via six-address read sequence-no additional control lines or firmware drivers needed.
Hardware STORE via HSB Allows external microcontroller to initiate STORE on demand (e.g., after critical data update) with precise busy signaling via open-drain HSB.
QuantumTrap cell architecture Provides bit-level nonvolatility with zero write latency penalty during normal SRAM operation and no wear leveling overhead.

Applications

Industrial PLC Data Logging Medical Device Configuration Storage

Use Scenario: Storing runtime parameters, calibration coefficients, and alarm history in programmable logic controllers operating in unattended factory environments.

IC Role / Device Role / Timing Role: Nonvolatile SRAM acting as persistent work RAM-retains last valid state across unexpected power loss without battery or supercapacitor management.

Use Value: Eliminates need for external EEPROM write cycles or battery-backed RAM, reducing BOM count and field failure risk from battery leakage or end-of-life.

Use Scenario: Preserving user-configured therapy settings, sensor offsets, and audit logs in portable infusion pumps and diagnostic monitors.

IC Role / Device Role / Timing Role: Fail-safe configuration memory that recalls validated settings at power-on, ensuring regulatory compliance with IEC 62304 data integrity requirements.

Use Value: Guarantees 20-year data retention without periodic refresh, meeting medical device shelf-life and reusability mandates.

Telecom Base Station Control Memory Avionics Flight Recorder Buffer

Use Scenario: Caching real-time radio resource allocation tables and neighbor cell lists in LTE/5G remote radio units exposed to wide temperature swings.

IC Role / Device Role / Timing Role: High-reliability SRAM with deterministic STORE/RECALL-operates across −40 °C to +85 °C with no performance derating.

Use Value: Maintains network uptime during brownouts; 35 ns access time supports real-time MAC-layer processing without latency penalties.

Use Scenario: Acting as crash-survivable buffer between flight sensors and solid-state recorder in commercial aircraft black boxes.

IC Role / Device Role / Timing Role: Power-loss-resilient memory capturing final seconds of telemetry before impact-induced power loss.

Use Value: Completes STORE within 20 ms using VCAP hold-up, satisfying DO-160 Section 22 crash survivability voltage sag requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
STK14CA8-35F1I 3.3 V only VCC (no VCCQ separation); 44-pin SOJ package; 45 ns access time; uses conventional NV cell with 100K STORE cycles. Lacks independent I/O voltage rail-unsuitable for mixed-voltage SoC interfaces requiring 1.8 V I/O. Select if board layout constraints favor SOJ and system operates exclusively at 3.3 V with relaxed endurance needs.
FM24V10-G F-RAM-based (not nvSRAM); 1 MB density; single 2.7–3.6 V supply; unlimited STORE cycles; 55 ns access time. No AutoStore on power loss-requires external power-fail interrupt and controlled STORE command. Select when infinite endurance is mandatory and system firmware can guarantee STORE execution prior to power collapse.

Compared with STK14CA8-35F1I and FM24V10-G, the CY14V256LA-BA35XIT uniquely combines dual-supply I/O flexibility, hands-off AutoStore, and 1M/20yr reliability in a compact FBGA-making it optimal for space-constrained industrial edge nodes where power integrity is unpredictable.

Availability

CY14V256LA-BA35XIT is available at Aetrix Electronics and suitable for industrial PLCs, medical infusion pumps, telecom radio units, and avionics recorders requiring stable component supply with guaranteed 20-year data retention and power-loss resilience.

Supply support for CY14V256LA-BA35XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q100.

The CY14V series targets mission-critical embedded systems needing seamless SRAM drop-in replacement with guaranteed nonvolatile storage-designed specifically for applications where battery backup is prohibited or impractical.

FAQ

What capacitor value is required on the VCAP pin for reliable AutoStore operation?

A 0.1 µF X7R ceramic capacitor rated for ≥10 V must be placed directly between VCAP and VSS, with minimal trace length. This value is specified in the DC Electrical Characteristics table (page 7) and validated for tSTORE ≤ 20 ms under worst-case VCC dropout profiles. Larger values do not improve reliability and may delay power-up RECALL timing.

Can CY14V256LA-BA35XIT operate with VCCQ = 1.8 V while VCC = 3.3 V?

Yes-VCCQ (1.65–1.95 V) and VCC (3.0–3.6 V) are fully independent supplies. The device supports 1.8 V I/O interfacing with 3.3 V core logic, enabling direct connection to FPGA banks or application processors with mixed-voltage I/O standards without level shifters.

How does the HSB pin behave during a Software STORE cycle?

HSB is driven LOW by the device immediately after the sixth address (0x0FC0) in the Software STORE sequence is read, remains LOW for the full tSTORE duration (max 20 ms), then transitions HIGH for tHHHD (100 ns) with full drive strength before reverting to weak pull-up (100 kΩ). External logic must monitor HSB to avoid premature access.

Is the CY14V256LA-BA35XIT pin-compatible with earlier CY14V256L variants?

No-CY14V256LA uses a 48-ball FBGA (BA package), whereas CY14V256L uses a 44-pin SOJ (L package). Pin functions differ significantly: HSB is new to the 'A' revision, VCCQ is split from VCC, and NC pins are repositioned. Migration requires PCB redesign and firmware validation of HSB handling and VCAP initialization.

CY14V256LA-BA35XIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
35ns
Access Time:
35 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-FBGA (6x10)

CY14V256LA-BA35XIT FAQ

1.How can I place an order for CY14V256LA-BA35XIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14V256LA-BA35XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14V256LA-BA35XIT reliable?

The price and inventory of CY14V256LA-BA35XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14V256LA-BA35XIT is usually 5 days.

3.What payment methods are accepted for CY14V256LA-BA35XIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14V256LA-BA35XIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14V256LA-BA35XIT?

CY14V256LA-BA35XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14V256LA-BA35XIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14V256LA-BA35XIT?

For technical support, including CY14V256LA-BA35XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14V256LA-BA35XIT requirements.

6.How does Aetrix verify that CY14V256LA-BA35XIT is sourced from the original manufacturer or authorized distributors?

All CY14V256LA-BA35XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14V256LA-BA35XIT meets industry standards.

7.What is the process for return or replacement of CY14V256LA-BA35XIT?

All CY14V256LA-BA35XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14V256LA-BA35XIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14V256LA-BA35XIT part is unused and in its original packaging.

Return procedure for CY14V256LA-BA35XIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY14V256LA-BA35XIT Tags

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