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Infineon Technologies CY15B016J-SXAT
- Part No.:
- CY15B016J-SXAT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
CY15B016J-SXAT.pdf
- Description:
- IC FRAM 16KBIT I2C 1MHZ 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,190
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Product details
Overview
CY15B016J-SXAT from Cypress Semiconductor is a 16-Kbit (2K × 8) automotive-grade serial F-RAM with I²C interface, operating from 2.7 V to 3.65 V over –40 °C to +85 °C. It delivers NoDelay™ writes, 10¹⁴ read/write endurance, and 151-year data retention-enabling reliable nonvolatile logging in automotive control units, battery management systems, and ADAS event recorders.
For engineers reviewing the CY15B016J-SXAT datasheet, CY15B016J-SXAT pinout, CY15B016J-SXAT application, or CY15B016J-SXAT equivalent, key selection criteria include write-speed-critical nonvolatile storage, I²C bus compatibility at 1 MHz, automotive temperature compliance, and hardware drop-in replacement capability for legacy serial EEPROMs without firmware changes.
Technical Context
The CY15B016J-SXAT implements a ferroelectric memory array organized as 2,048 × 8 bits, accessed via standard I²C protocol with slave address format 1010xxxR/W. It uses no internal charge pump-eliminating write delays and reducing power versus EEPROM.
Its 11-bit addressing combines 3-bit page select (bits 10:8) and 8-bit word address (bits 7:0), supporting both sequential and random access. The device operates as a pure slave with no internal timing overhead: write completion is synchronous with the final I²C clock edge, requiring no polling or wait states.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16 Kbit (2,048 × 8), enabling compact storage of configuration registers or fault logs without external address latching |
| I²C Speed | Up to 1 MHz-supports high-throughput parameter updates in real-time control loops |
| Write Endurance | 100 trillion (10¹⁴) cycles-allows continuous logging at 100 Hz for >31 years without wear-out |
| Data Retention | 151 years at +85 °C-guarantees integrity across full automotive lifecycle without refresh |
| Supply Voltage | 2.7 V to 3.65 V-matches typical 3.3 V automotive domain controller rails with margin for transients |
| Operating Temp | –40 °C to +85 °C (Automotive-A grade)-qualified for under-hood and cabin ECUs per AEC-Q100 |
| Active Current | 100 µA at 100 kHz-minimizes system-level power budget impact during frequent status writes |
Pinout & Package
8-pin SOIC (Small Outline Integrated Circuit) package, RoHS-compliant, surface-mountable with standard reflow profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: WP | Write Protect input | Hardware-enables full-memory lock when pulled to VDD; internally pulled down for default write-enable |
| 2: SCL | I²C clock input | Master-generated clock synchronizing all data transfers; rising edge samples SDA, falling edge outputs data |
| 3: SDA | I²C bidirectional data line | Open-drain, Schmitt-triggered, slope-controlled-ensures noise immunity and bus arbitration compatibility |
| 4: NC | No Connect | Die pad unconnected; must be left floating or tied to ground per layout best practice |
| 5: VSS | Ground reference | System return path; requires low-impedance connection to minimize I²C signal ground bounce |
| 6: NC | No Connect | Die pad unconnected; no routing or termination required |
| 7: VDD | Power supply input | Supplies core logic and F-RAM array; decoupling capacitor (100 nF) required within 5 mm |
| 8: NC | No Connect | Die pad unconnected; electrically isolated from internal circuitry |
Key Features
| Feature | Design Value |
|---|---|
| NoDelay™ Write Architecture | Zero-latency byte writes-data committed at bus speed without polling, eliminating timeout handling in firmware |
| Ferroelectric Memory Core | 10¹⁴ endurance and 151-year retention achieved without oxide degradation mechanisms inherent to flash/EEPROM |
| I²C Bus Compatibility | Direct hardware replacement for 2K×8 EEPROMs (e.g., AT24C16) using identical address map and timing envelopes |
| Automotive-A Qualification | Guaranteed operation across –40 °C to +85 °C with full electrical specs validated per AEC-Q100 stress test conditions |
| Low-Power Write Operation | 3 µA standby current and no elevated voltage generation-reduces thermal load and eliminates charge pump noise coupling |
Applications
| Automotive Body Control Module (BCM) | EV Battery Management System (BMS) |
|---|---|
|
Use Scenario: Storing door lock actuation history, window position calibration, and lighting configuration across ignition cycles. IC Role / Device Role / Timing Role: Nonvolatile parameter store interfaced directly to MCU's I²C peripheral; updated on every user action. Use Value: Enables 100% lossless logging of 50+ daily events over 15-year vehicle life-no wear leveling or block management required. |
Use Scenario: Recording cell voltage imbalance events, thermal fault timestamps, and SOC calibration offsets during charging/discharging cycles. IC Role / Device Role / Timing Role: High-frequency fault logger synchronized to BMS microsecond-level sampling intervals via I²C burst writes. Use Value: Supports 10 kHz logging bursts without data loss-achievable only with sub-microsecond write commit versus EEPROM's 5–20 ms delays. |
| ADAS Event Data Recorder | Industrial PLC Configuration Storage |
|
Use Scenario: Capturing pre-crash sensor fusion data (radar, camera, IMU) triggered by collision detection algorithms. IC Role / Device Role / Timing Role: Ring-buffer memory storing last 5 seconds of raw sensor metadata before and after trigger event. Use Value: Guarantees deterministic 100 ns write latency-critical for capturing time-critical diagnostics where EEPROM would miss frames. |
Use Scenario: Holding ladder logic runtime parameters, I/O mapping tables, and firmware update staging flags in factory automation controllers. IC Role / Device Role / Timing Role: Persistent configuration register bank accessed during boot and runtime via industrial MCU I²C master. Use Value: Eliminates 200+ ms boot delay caused by EEPROM initialization-reducing machine downtime during cold starts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial nonvolatile memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT24C16D-SSHM-T (Microchip) | 16-Kbit I²C EEPROM; 1M write cycles, 100-year retention at +25°C, 5 ms typical write time | Lacks automotive-A temp rating; requires firmware polling and wear-leveling for high-write scenarios | Select only if cost sensitivity outweighs write endurance and automotive qualification requirements |
| FM24V10-G (Cypress) | 1-Mbit F-RAM, same architecture but larger density; 2.7–3.6 V, –40°C to +85°C, 1 MHz I²C | Higher pin count (8-lead TSSOP), different memory map-requires PCB and firmware redesign | Choose when >16 Kbit capacity is needed and board space allows TSSOP footprint |
Compared with AT24C16D-SSHM-T, CY15B016J-SXAT eliminates write latency and extends endurance by 100 million×; versus FM24V10-G, it offers pin-compatible SOIC packaging and lower BOM cost for 16-Kbit use cases without sacrificing automotive reliability.
Availability
CY15B016J-SXAT is available at Aetrix Electronics and suitable for automotive body control modules, EV battery management systems, and ADAS event recorders requiring stable component supply with guaranteed long-term availability and AEC-Q100 compliance.
Supply support for CY15B016J-SXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability semiconductor solutions for automotive, industrial, and IoT applications, with expertise in nonvolatile memory and programmable systems.
CY15B016J belongs to Cypress's automotive-qualified F-RAM product line, engineered specifically to replace EEPROM in write-intensive automotive subsystems where speed, endurance, and temperature robustness are critical.
FAQ
Is CY15B016J-SXAT pin-compatible with standard 2K×8 I²C EEPROMs like AT24C16?
Yes-CY15B016J-SXAT uses an identical 8-pin SOIC footprint and I²C slave address structure (1010xxxR/W). It supports legacy 100 kHz and 400 kHz timings, enabling direct PCB-level replacement without layout changes or firmware modifications beyond disabling EEPROM polling routines.
Does CY15B016J-SXAT require external high-voltage circuitry for write operations?
No-unlike EEPROM, CY15B016J-SXAT performs writes using standard VDD (2.7–3.65 V) without internal charge pumps or elevated voltage generators. This eliminates associated power supply noise, reduces EMI, and simplifies power domain design in noise-sensitive automotive environments.
How does the 151-year data retention specification apply under real automotive conditions?
The 151-year retention is specified at +85 °C ambient and verified per JEDEC JESD22-A117 accelerated testing. At lower temperatures (e.g., +25 °C cabin modules), retention exceeds 1,000 years-ensuring data integrity throughout vehicle service life without periodic refresh or backup power.
Can CY15B016J-SXAT operate reliably during cold-cranking voltage drops?
Yes-its 2.7 V minimum VDD allows uninterrupted operation during automotive cold-crank events (typically 6–9 V system, but local 3.3 V rail may dip to ~2.8 V). Internal power-on reset ensures deterministic state recovery without data corruption when voltage recovers.
CY15B016J-SXAT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- F-RAM™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FRAM
- Technology:
- FRAM (Ferroelectric RAM)
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- I2C
- Clock Frequency:
- 1 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 2.7V ~ 3.65V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
CY15B016J-SXAT FAQ
1.How can I place an order for CY15B016J-SXAT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY15B016J-SXAT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY15B016J-SXAT reliable?
The price and inventory of CY15B016J-SXAT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY15B016J-SXAT is usually 5 days.
3.What payment methods are accepted for CY15B016J-SXAT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY15B016J-SXAT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY15B016J-SXAT?
CY15B016J-SXAT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY15B016J-SXAT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY15B016J-SXAT?
For technical support, including CY15B016J-SXAT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY15B016J-SXAT requirements.
6.How does Aetrix verify that CY15B016J-SXAT is sourced from the original manufacturer or authorized distributors?
All CY15B016J-SXAT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY15B016J-SXAT meets industry standards.
7.What is the process for return or replacement of CY15B016J-SXAT?
All CY15B016J-SXAT units undergo pre-shipment inspection (PSI). If there is an issue with CY15B016J-SXAT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY15B016J-SXAT part is unused and in its original packaging.
Return procedure for CY15B016J-SXAT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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