Infineon Technologies CY15B016J-SXET

Overview

CY15B016J-SXET from Infineon Technologies (formerly Cypress) is a 16-Kbit (2K × 8) serial I²C ferroelectric RAM (F-RAM) with automotive-grade reliability. It delivers NoDelay™ writes, 10¹³ read/write endurance, 121-year data retention at +125°C, and operates across –40°C to +125°C. It serves as a hardware-compatible drop-in replacement for I²C EEPROM in automotive black-box logging and real-time sensor data buffering.

For engineers reviewing the CY15B016J-SXET datasheet, CY15B016J-SXET pinout, CY15B016J-SXET application, or CY15B016J-SXET equivalent, key selection criteria include guaranteed AEC-Q100 Grade 1 compliance, zero-write-delay operation, 1-MHz I²C interface support, and SOIC-8 packaging with write-protect functionality.

Technical Context

The CY15B016J-SXET implements a true nonvolatile memory architecture using lead zirconate titanate (PZT) ferroelectric capacitors, enabling RAM-like random access with EEPROM-level persistence. Its I²C slave interface supports standard-mode (100 kHz), fast-mode (400 kHz), and fast-mode plus (1 MHz) timing without protocol modification.

Internal address management uses an 11-bit address latch (3-bit page + 8-bit word), eliminating external address overhead. The device lacks internal charge pumps or write-cycle timers-write completion is synchronous with the final I²C clock edge, removing polling requirements and enabling deterministic latency under 1 μs per byte.

Key Specifications

Pinout & Package

Package: 8-pin Small Outline Integrated Circuit (SOIC), 150 mil width, RoHS-compliant, moisture sensitivity level (MSL) 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Compared with AT24C16D-SSHM-T, CY15B016J-SXET provides 10 million× greater endurance and guaranteed +125°C operation, making it suitable for under-hood use; versus MR25H10MDF, it retains I²C compatibility and lower density for minimal firmware impact in legacy EEPROM-replacement scenarios.

Availability

CY15B016J-SXET is available at Aetrix Electronics and suitable for automotive event data recorders, engine control units, ADAS fault loggers, and electric power steering calibration storage requiring stable component supply across extended product lifecycles.

Supply support for CY15B016J-SXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and reliable memory solutions.

The CY15B016J-SXET belongs to Infineon's automotive-qualified F-RAM portfolio, designed specifically to replace EEPROM in safety-critical, high-write-frequency automotive subsystems where data integrity and longevity are non-negotiable.

FAQ

Is CY15B016J-SXET pin-compatible with standard I²C EEPROMs in SOIC-8 packages?

Yes. CY15B016J-SXET uses identical SOIC-8 pinout (WP, SCL, SDA, VSS, VDD) and matches standard I²C EEPROM timing for 100 kHz and 400 kHz modes. No PCB redesign is needed-only firmware verification of write completion behavior (no polling required) is advised.

Does CY15B016J-SXET require external pull-up resistors on SDA and SCL lines?

Yes. SDA and SCL are open-drain outputs requiring external pull-up resistors. Recommended values are 2.2 kΩ for 100 kHz, 1 kΩ for 400 kHz, and 470 Ω for 1 MHz operation-calculated per I²C bus capacitance and rise-time requirements specified in the datasheet.

How does the WP pin function during power-up sequences?

The WP pin has an internal pull-down resistor. When left unconnected or grounded, full memory access is enabled. When tied to VDD, all addresses are write-protected. This state is sampled at power-on reset and remains latched until next power cycle-no dynamic reconfiguration is supported.

What failure modes are mitigated by using F-RAM instead of EEPROM in automotive applications?

F-RAM eliminates EEPROM-specific failure modes: write-cycle interruption causing partial writes or data corruption, endurance exhaustion leading to silent bit errors, and elevated temperature-induced retention loss. Its zero-delay writes also prevent data loss during unexpected power drops common in vehicle cranking events.