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Infineon Technologies CY15B101N-ZS60XA
- Part No.:
- CY15B101N-ZS60XA
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY15B101N-ZS60XA.pdf
- Description:
- IC FRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,206
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Product details
Overview
CY15B101N-ZS60XA from Infineon Technologies (formerly Cypress) is a 1-Mbit (64K × 16) automotive-grade ferroelectric RAM (F-RAM™) with SRAM-compatible parallel interface, 60-ns access time, 1014 read/write endurance, and 151-year data retention at +85 °C - deployed in engine control units for real-time sensor logging and fault-code storage.
For engineers reviewing the CY15B101N-ZS60XA datasheet, CY15B101N-ZS60XA pinout, CY15B101N-ZS60XA application, or CY15B101N-ZS60XA equivalent, key selection criteria include NoDelay™ write capability, TSOP-II 44-pin compatibility with legacy SRAM footprints, automotive temperature range (–40 °C to +85 °C), and byte-select (UB/LB) configurability for 128K × 8 mode.
Technical Context
The CY15B101N-ZS60XA implements a parallel asynchronous interface with CE/WE/OE control logic, supporting both CE-initiated and WE-initiated read/write cycles. Its F-RAM core eliminates write latency through instantaneous polarization switching, enabling true single-cycle nonvolatile writes without polling or erase cycles.
Internally organized as eight 2048-row blocks with four column locations per row, it enables page-mode operation with 30-ns cycle time for sequential accesses within the same row. Address A15–A2 selects the row; A1–A0 selects the column; UB and LB independently enable upper/lower 8-bit data lanes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 1 Mbit (64K × 16), configurable as 128K × 8 using UB/LB controls - enables flexible data bus alignment without external logic. |
| Access time | 60 ns (max) - matches standard fast SRAM timing, allowing direct drop-in replacement in existing 64K × 16 designs. |
| Endurance | 1014 read/write cycles - supports continuous logging at 1 kHz for >3,170 years without wear-out failure. |
| Data retention | 151 years at +85 °C - exceeds automotive AEC-Q100 Grade 2 requirements without backup power or refresh. |
| Supply voltage | 2.0 V to 3.6 V - compatible with modern low-voltage microcontrollers and avoids level-shifting in 3.3 V systems. |
| Operating temperature | –40 °C to +85 °C (Automotive-A grade) - qualified for under-hood ECU environments without derating. |
| Active current | 7 mA (typ) - enables low-power wake-up logging in battery-supervised modules. |
| Sleep current | 120 µA (typ) - reduces quiescent draw during vehicle sleep mode while preserving nonvolatile state. |
Pinout & Package
Package: 44-pin Thin Small Outline Package (TSOP-II), 400-mil width, surface-mount, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address inputs | 16-bit address bus latched on CE falling edge; A1–A0 used for column selection in page mode. |
| DQ0–DQ15 | Bidirectional data bus | 16-bit parallel I/O; HI-Z when OE HIGH or UB/LB deasserted - enables byte-wise access without bus contention. |
| WE | Write Enable | Asserted LOW to initiate write; rising edge commits data to F-RAM array with zero delay - no write-complete polling required. |
| CE | Chip Enable | Falling edge latches full address; may remain LOW for multiple accesses - enables SRAM-like CE-grounded operation. |
| OE | Output Enable | Controls DQ bus drive; data appears only after access time - prevents invalid data transients on bus. |
| UB / LB | Upper/Lower byte select | Independent 8-bit lane enables; tied to GND if unused - supports 128K × 8 configuration or byte-write isolation. |
| ZZ | Sleep mode control | LOW enters ultra-low-power sleep (120 µA); must be HIGH before access - eliminates need for external power gating. |
| VDD / VSS | Power / Ground | Single 2.0–3.6 V supply; no separate VPP or backup battery - simplifies PCB layout and BOM. |
Key Features
| Feature | Design Value |
|---|---|
| NoDelay™ writes | Writes complete in same cycle as reads - eliminates firmware wait states and EEPROM-style polling loops. |
| SRAM pinout compatibility | Industry-standard 64K × 16 parallel footprint - enables hardware reuse without PCB redesign or adapter. |
| Page-mode 30-ns cycle | Four-column burst access within same row - accelerates sequential sensor data buffering by >2× vs random access. |
| Monolithic nonvolatility | No battery, capacitor, or external support circuitry - removes field failure modes associated with BBSRAM aging. |
| Automotive qualification | AEC-Q100 Grade 2 compliant - validated for vibration, thermal cycling, and humidity resistance in ECU deployments. |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
|
Use Scenario: Real-time recording of misfire events, knock sensor waveforms, and OBD-II diagnostic trouble codes (DTCs) during engine runtime. IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory interfaced directly to MCU's parallel bus; stores timestamped data between power cycles. Use Value: 1014 endurance ensures >10 years of daily cold-start logging without degradation; 60-ns access enables capture of transient combustion anomalies. |
Use Scenario: Storing camera calibration parameters, radar fusion metadata, and short-term event buffers for automatic emergency braking (AEB). IC Role / Device Role / Timing Role: High-reliability configuration store accessed during boot and updated dynamically during sensor recalibration routines. Use Value: 151-year data retention guarantees parameter integrity across vehicle lifetime; UB/LB byte-select allows atomic update of individual calibration fields. |
| Telematics Control Unit (TCU) | Electric Power Steering (EPS) |
|
Use Scenario: Secure logging of GPS trajectory, cellular handover history, and firmware update rollback records in connected vehicle platforms. IC Role / Device Role / Timing Role: Tamper-resistant nonvolatile memory mapped into MCU's memory space; accessed via standard SRAM read/write instructions. Use Value: NoDelay™ writes prevent data loss during unexpected ignition-off events; 2.0–3.6 V operation supports wide-input DC-DC regulation in 12 V systems. |
Use Scenario: Storing torque sensor offset compensation values, motor phase alignment data, and fault-history counters in safety-critical steering modules. IC Role / Device Role / Timing Role: ASIL-B compliant nonvolatile storage interfaced to dual-core lockstep MCU via parallel bus with ECC-disabled path. Use Value: Monolithic reliability eliminates battery leakage risk in sealed EPS housings; TSOP-II package withstands 50 g shock per AEC-Q200. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FM22L16-G from Cypress/Infineon | 2-Mbit (128K × 16), 70-ns access, same TSOP-II 44-pin package, but requires 3.0–3.6 V only. | Higher density for extended log buffers; not suitable for 2.0–2.7 V MCU interfaces. | Select when >1 Mbit capacity is needed and system VDD ≥ 3.0 V. |
| AT28HC256-90PU from Microchip | 256-Kbit EEPROM, 90-ns access, 100K write cycles, requires 5 V supply and 5–10 ms write latency. | Limited endurance and slow writes preclude high-frequency logging; incompatible with low-voltage or real-time use cases. | Only consider for cost-sensitive, low-update-rate applications where 5 V is available and latency tolerance >5 ms exists. |
Compared with FM22L16-G and AT28HC256-90PU, CY15B101N-ZS60XA uniquely delivers 1-Mbit density with sub-100-ns nonvolatile writes, 2.0 V operation, and automotive temperature compliance - making it the sole option for real-time, low-voltage, high-endurance parallel memory in ECU and ADAS subsystems.
Availability
CY15B101N-ZS60XA is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, telematics gateways, and electric power steering modules requiring stable component supply across multi-year automotive production programs.
Supply support for CY15B101N-ZS60XA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive ICs, and secure connectivity solutions.
CY15B101N-ZS60XA belongs to Infineon's F-RAM product line, engineered specifically for automotive and industrial applications demanding infinite endurance, instant nonvolatility, and robust operation in harsh environments - replacing battery-backed SRAM and legacy EEPROM.
FAQ
Is CY15B101N-ZS60XA pin-compatible with standard 64K × 16 SRAMs?
Yes - it uses an industry-standard 44-pin TSOP-II footprint with identical A0–A15, DQ0–DQ15, CE, WE, OE, and VDD/VSS pin assignments. UB and LB map to unused pins on most SRAMs and can be tied to ground, enabling true drop-in replacement without PCB modification.
Does CY15B101N-ZS60XA require external hardware for write protection?
No - it has no internal write-protect register or software lock mechanism. Protection is implemented externally via CE/WE timing control or system-level MCU firmware. The device always accepts writes when CE and WE are asserted correctly, consistent with SRAM behavior.
Can CY15B101N-ZS60XA operate at 2.0 V while maintaining full 60-ns access time?
Yes - all AC specifications including 60-ns access time and 90-ns cycle time are guaranteed over the full 2.0–3.6 V VDD range per datasheet Rev. *F, Section 6. This enables interoperability with 2.0 V–2.7 V microcontrollers without performance penalty or voltage translation.
What happens if ZZ (sleep) is asserted during an active write cycle?
The device completes the ongoing write before entering sleep mode - no data corruption occurs. However, tZZEX (exit-from-sleep delay) of 100 ns must elapse after ZZ returns HIGH before initiating the next access. This behavior is explicitly defined in the "Sleep Mode" section (page 5) of the datasheet.
CY15B101N-ZS60XA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- F-RAM™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FRAM
- Technology:
- FRAM (Ferroelectric RAM)
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 90ns
- Access Time:
- 90 ns
- Voltage - Supply:
- 2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY15B101N-ZS60XA FAQ
1.How can I place an order for CY15B101N-ZS60XA through Aetrix?
Please submit a Request for Quotation (RFQ) for CY15B101N-ZS60XA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY15B101N-ZS60XA reliable?
The price and inventory of CY15B101N-ZS60XA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY15B101N-ZS60XA is usually 5 days.
3.What payment methods are accepted for CY15B101N-ZS60XA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY15B101N-ZS60XA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY15B101N-ZS60XA?
CY15B101N-ZS60XA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY15B101N-ZS60XA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY15B101N-ZS60XA?
For technical support, including CY15B101N-ZS60XA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY15B101N-ZS60XA requirements.
6.How does Aetrix verify that CY15B101N-ZS60XA is sourced from the original manufacturer or authorized distributors?
All CY15B101N-ZS60XA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY15B101N-ZS60XA meets industry standards.
7.What is the process for return or replacement of CY15B101N-ZS60XA?
All CY15B101N-ZS60XA units undergo pre-shipment inspection (PSI). If there is an issue with CY15B101N-ZS60XA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY15B101N-ZS60XA part is unused and in its original packaging.
Return procedure for CY15B101N-ZS60XA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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