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Infineon Technologies CY15B101N-ZS60XAT
- Part No.:
- CY15B101N-ZS60XAT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY15B101N-ZS60XAT.pdf
- Description:
- IC FRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:3,706
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Product details
Overview
CY15B101N-ZS60XAT from Infineon Technologies (formerly Cypress) is a 1-Mbit automotive-grade ferroelectric RAM (F-RAM™) logically organized as 64K × 16, with SRAM-compatible parallel interface, 60-ns access time, and true nonvolatility enabling immediate data retention without write delay. It operates across –40 °C to +85 °C and delivers 1014 read/write endurance for high-cycle logging in engine control units.
For engineers reviewing the CY15B101N-ZS60XAT datasheet, CY15B101N-ZS60XAT pinout, CY15B101N-ZS60XAT application, or CY15B101N-ZS60XAT equivalent, key selection criteria include NoDelay™ write timing, byte-selectable 16-bit bus operation, TSOP-II package compatibility, and drop-in replacement capability for 64K × 16 SRAMs in safety-critical automotive systems.
Technical Context
The CY15B101N-ZS60XAT implements a ferroelectric memory array with eight 2048-row blocks and four-column page architecture, enabling sub-30-ns cycle time in page mode. Its CE- and WE-controlled dual-write protocol supports both SRAM-like random access and burst-aligned sequential writes without polling or wait states.
It features dedicated UB/LB byte enables for 8-bit sub-word access, ZZ sleep control for <120 µA standby current, and full SRAM pinout compliance-including A0–A15 address lines, DQ0–DQ15 bidirectional data bus, and standard CE/OE/WE controls-ensuring hardware-level interoperability with legacy SRAM-based designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 1 Mbit (64K × 16), configurable as 128K × 8 via UB/LB control |
| Access time | 60 ns (max), enabling direct replacement of 70-ns SRAMs without timing redesign |
| Write endurance | 1014 cycles - supports >10 years of continuous 100-Hz data logging at full bandwidth |
| Data retention | 151 years at +85 °C - eliminates battery backup and wear-leveling firmware overhead |
| Supply voltage | 2.0 V to 3.6 V - compatible with automotive 3.3-V rail and low-voltage microcontrollers |
| Operating temperature | –40 °C to +85 °C (Automotive-A grade) - qualified for under-hood ECU deployment |
| Package | 44-pin TSOP-II (400-mil), surface-mount, RoHS-compliant - matches industry-standard SRAM footprint |
Pinout & Package
44-pin Thin Small Outline Package (TSOP-II), 400-mil body width, 0.8-mm lead pitch, JEDEC MO-141AC compliant. Pin 1 index marked by notch or dot; top view shown in datasheet Figure 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address inputs | Fall edge of CE latches full 16-bit address; A1–A0 select column within 4-location page |
| DQ0–DQ15 | Bidirectional data bus | 16-bit parallel I/O; driven only when OE LOW and corresponding UB/LB asserted |
| WE | Write enable | Rising edge initiates write; falling edge latches new column address in page mode |
| CE | Chip enable | Falling edge latches address and starts memory cycle; may remain LOW for SRAM-style continuous access |
| OE | Output enable | Controls DQ bus drive; HI-Z when HIGH - prevents bus contention during invalid data windows |
| UB / LB | Upper/Lower byte select | Enable DQ15–DQ8 or DQ7–DQ0 independently; tied to GND if unused for full-word operation |
| ZZ | Sleep control | LOW enters ultra-low-power mode (<120 µA); must be HIGH before any access; tie to VDD if unused |
| VDD / VSS | Power / Ground | Single 2.0–3.6 V supply; decoupling required per automotive EMC standards |
Key Features
| Feature | Design Value |
|---|---|
| NoDelay™ write architecture | Writes complete in same cycle as reads - no wait states, no polling, no firmware overhead |
| SRAM pinout and timing compatibility | Direct drop-in replacement for 64K × 16 asynchronous SRAMs without PCB or logic redesign |
| Page-mode 30-ns cycle time | Enables 33-MHz burst transfers across 4-column pages - critical for real-time CAN message buffering |
| Monolithic nonvolatility | Eliminates battery, supercapacitor, and associated rework - reduces BOM count and field failure modes |
| Automotive-A qualification | Validated per AEC-Q100 Grade 2; supports functional safety requirements in ASIL-B systems |
Applications
| Engine Control Unit (ECU) Data Logging | Advanced Driver Assistance Systems (ADAS) Event Buffering |
|---|---|
|
Use Scenario: Continuous recording of sensor fusion timestamps, actuator commands, and fault codes during vehicle operation. IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory interfacing directly with MCU parallel bus; provides deterministic 60-ns write latency. Use Value: Survives ignition cycling without data loss; eliminates EEPROM wear-out concerns in 100-Hz logging scenarios. |
Use Scenario: Temporary storage of radar/LiDAR frame metadata and trigger events prior to flash upload. IC Role / Device Role / Timing Role: High-endurance buffer between sensor interface and host processor; supports burst writes during collision detection windows. Use Value: Sustains 1014 cycles - exceeds lifetime requirement for ADAS domain controllers in L2+ vehicles. |
| Body Control Module (BCM) Configuration Storage | Electric Power Steering (EPS) Calibration Retention |
|
Use Scenario: Storing user preferences (window positions, mirror angles) and module configuration parameters across power cycles. IC Role / Device Role / Timing Role: Parallel-interface nonvolatile memory mapped into MCU address space; accessed via standard SRAM read/write instructions. Use Value: 151-year data retention at +85 °C ensures parameter integrity over full vehicle lifecycle without refresh. |
Use Scenario: Retaining torque-sensor offset compensation values and motor phase calibration after factory programming. IC Role / Device Role / Timing Role: Safety-critical nonvolatile storage element in EPS ECU; accessed during boot and runtime recalibration. Use Value: Automotive-A temperature rating and monolithic construction meet ISO 26262 ASIL-B hardware requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile parallel-memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FM25V10-G | 1-Mbit F-RAM, 44-pin TSOP-II, but 85 °C max operating temp only (industrial grade) | Lacks AEC-Q100 qualification; not approved for under-hood automotive use | Select only for non-automotive industrial control where extended temperature is not required |
| IS61WV102416BLL-10TLI | 1-Mbit battery-backed SRAM, same pinout and speed, but requires external battery and rework | Introduces moisture sensitivity, battery leakage risk, and end-of-life replacement complexity | Use only if existing design already uses BBSRAM and F-RAM redesign is not feasible |
Compared with FM25V10-G and IS61WV102416BLL-10TLI, the CY15B101N-ZS60XAT uniquely combines AEC-Q100 qualification, monolithic reliability, and true zero-delay writes - making it the only drop-in solution that satisfies both functional safety and long-term data integrity requirements in automotive ECUs.
Availability
CY15B101N-ZS60XAT is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and electric power steering modules requiring stable component supply, long-lifecycle support, and automotive-grade traceability.
Supply support for CY15B101N-ZS60XAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive ICs, and security solutions with over 40 years of automotive qualification expertise.
The CY15B101N-ZS60XAT belongs to Infineon's F-RAM product line, engineered specifically for automotive and industrial applications demanding high-reliability, high-endurance nonvolatile memory without battery dependency or complex firmware management.
FAQ
Is CY15B101N-ZS60XAT pin-compatible with standard 64K × 16 SRAMs?
Yes - it uses an industry-standard 44-pin TSOP-II footprint with identical A0–A15, DQ0–DQ15, CE, OE, and WE signal assignments. UB/LB pins map to standard byte-enable functions, and ZZ replaces NC or reserved pins on many SRAMs. No PCB redesign is needed for drop-in replacement.
Does CY15B101N-ZS60XAT require special write sequencing or command protocols?
No - it operates like an asynchronous SRAM: write cycles initiate on CE or WE transitions with no command codes, address setup delays, or status polling. Data written on the rising edge of WE is immediately nonvolatile, eliminating EEPROM-style write cycles and timeout handling.
Can CY15B101N-ZS60XAT be used in systems powered by 2.5-V rails?
Yes - its guaranteed operating range is 2.0 V to 3.6 V, including 2.5-V nominal supplies. All AC/DC specifications, including 60-ns access time and 1014 endurance, are validated across this full voltage range per datasheet Rev. *F testing conditions.
What happens if ZZ (sleep) is left floating during operation?
Leaving ZZ floating risks unintended entry into sleep mode due to noise coupling, causing bus lockup until ZZ is pulled HIGH. The datasheet explicitly requires ZZ to be tied to VDD if unused. A 10-kΩ pull-up resistor is recommended for robustness in automotive EMI environments.
CY15B101N-ZS60XAT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- F-RAM™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FRAM
- Technology:
- FRAM (Ferroelectric RAM)
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 90ns
- Access Time:
- 90 ns
- Voltage - Supply:
- 2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY15B101N-ZS60XAT FAQ
1.How can I place an order for CY15B101N-ZS60XAT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY15B101N-ZS60XAT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY15B101N-ZS60XAT reliable?
The price and inventory of CY15B101N-ZS60XAT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY15B101N-ZS60XAT is usually 5 days.
3.What payment methods are accepted for CY15B101N-ZS60XAT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY15B101N-ZS60XAT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY15B101N-ZS60XAT?
CY15B101N-ZS60XAT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY15B101N-ZS60XAT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY15B101N-ZS60XAT?
For technical support, including CY15B101N-ZS60XAT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY15B101N-ZS60XAT requirements.
6.How does Aetrix verify that CY15B101N-ZS60XAT is sourced from the original manufacturer or authorized distributors?
All CY15B101N-ZS60XAT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY15B101N-ZS60XAT meets industry standards.
7.What is the process for return or replacement of CY15B101N-ZS60XAT?
All CY15B101N-ZS60XAT units undergo pre-shipment inspection (PSI). If there is an issue with CY15B101N-ZS60XAT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY15B101N-ZS60XAT part is unused and in its original packaging.
Return procedure for CY15B101N-ZS60XAT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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