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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies CY15B101N-ZS60XE

Name: CY15B101N-ZS60XE
Brand: Infineon Technologies
SKU: CY15B101N-ZS60XE
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CY15B101N-ZS60XE

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 44-TSOP (0.400", 10.16mm Width)

Datasheet:: CY15B101N-ZS60XE.pdf

Description:: IC FRAM 1MBIT PARALLEL 44TSOP II

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Product details

Overview

CY15B101N-ZS60XE from Cypress Semiconductor is a 1-Mbit (64K × 16) automotive-grade ferroelectric RAM (F-RAM™) with SRAM-compatible parallel interface, –40 °C to +125 °C operation, 60 ns access time, 10¹³ read/write endurance, and NoDelay™ nonvolatile writes. It serves as direct replacement for battery-backed SRAM in engine control units, ADAS black boxes, and automotive data loggers requiring frequent, deterministic write cycles without backup power.

For engineers reviewing the CY15B101N-ZS60XE datasheet, CY15B101N-ZS60XE pinout, CY15B101N-ZS60XE application, or CY15B101N-ZS60XE equivalent, key selection criteria include its TSOP-II 44-pin package, byte-selectable 16-bit bus (UB/LB), sleep mode via ZZ pin, and guaranteed automotive-E reliability without external capacitors or batteries.

Technical Context

The CY15B101N-ZS60XE implements a parallel asynchronous interface with dual write control (CE- or WE-triggered), page-mode operation across four-column rows, and automatic precharge on upper address (A15–A2) change or CE deassertion. Its ferroelectric memory array eliminates write latency and enables true single-cycle nonvolatile writes.

It supports configurable 128K × 8 operation using UB/LB pins, maintains SRAM timing compatibility (90 ns cycle time), and enters ultra-low-power sleep (<1 µA) when ZZ is pulled LOW - with tZZEX exit delay before next access. All control logic operates within 2.0–3.6 V VDD.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory size	1-Mbit (64K × 16), configurable as 128K × 8 via UB/LB byte select
Access time	60 ns - enables drop-in replacement for standard 64K × 16 SRAMs without timing redesign
Endurance	10¹³ read/write cycles - supports >10 years of continuous logging at 100 Hz write rate
Data retention	121 years at +125 °C - validated per AEC-Q100 stress conditions, no refresh required
Operating voltage	2.0 V to 3.6 V - compatible with automotive 3.3 V rail and brown-out tolerant
Temperature range	–40 °C to +125 °C (Automotive-E) - qualified per AEC-Q100 Grade 1 requirements
Active current	7 mA (typ) - allows sustained high-speed logging without thermal derating

Pinout & Package

44-pin Thin Small Outline Package (TSOP-II), 400-mil width, surface-mount, RoHS-compliant. Pin 1 marked by notch or dot; top view shown in datasheet Figure 1.

Pin/Terminal	Circuit Role	Design Meaning
A0–A15	Input	16-bit address bus; A1–A0 enable page-mode column addressing within 4-word rows
DQ0–DQ15	I/O	16-bit bidirectional data bus; driven only when OE = LOW and corresponding UB/LB = LOW
WE	Input	Write Enable - rising edge initiates write; falling edge latches new column address in page mode
CE	Input	Chip Enable - falling edge latches full address; may remain LOW for SRAM-like continuous access
OE	Input	Output Enable - controls DQ bus drive; HI-Z when HIGH, preventing bus contention during invalid reads
UB / LB	Input	Upper/Lower Byte Select - enables DQ15–DQ8 or DQ7–DQ0 independently; supports 8-bit system interfacing
ZZ	Input	Sleep Mode - LOW places device in <1 µA standby; must be HIGH for all active operations
VDD / VSS	Power	Single 2.0–3.6 V supply and ground; NC pins are unconnected die pads, not to be tied

Key Features

Feature	Design Value
NoDelay™ writes	Nonvolatile write completion in same cycle as read - eliminates polling, timeout logic, and firmware overhead
SRAM pinout compatibility	Industry-standard 64K × 16 parallel footprint - enables direct PCB-level replacement without layout change
Page-mode 30 ns cycle	Four consecutive column accesses within same row complete in ≤30 ns each - accelerates burst logging
Monolithic BBSRAM replacement	Eliminates battery, capacitor, and associated rework - reduces BOM count and field failure modes
Automotive-E qualification	Validated for engine bay and transmission control environments - includes AEC-Q100 stress testing and lot traceability

Applications

Engine Control Unit (ECU) Data Logging

Advanced Driver Assistance Systems (ADAS) Event Recorder

Use Scenario: Continuous capture of sensor fusion timestamps, CAN message IDs, and actuator commands during vehicle operation.

IC Role / Device Role / Timing Role: Nonvolatile parallel memory buffer interfaced directly to MCU's SRAM bus, storing critical fault-triggered snapshots.

Use Value: 10¹³ endurance ensures >15-year lifetime under 500 Hz logging; 60 ns access enables real-time overwrite without interrupt latency.

Use Scenario: Recording pre-crash video metadata, radar point clouds, and steering angle deltas for regulatory incident reconstruction.

IC Role / Device Role / Timing Role: Deterministic write memory co-located with image processor, capturing timestamped event buffers without DRAM or flash wear leveling.

Use Value: NoDelay™ writes guarantee sub-100 ns persistence - critical for preserving last 200 ms of data before power loss in collision scenarios.

Transmission Control Module (TCM) Calibration Storage

Electric Power Steering (EPS) Fault History Log

Use Scenario: Storing adaptive shift-map coefficients, clutch wear counters, and oil temperature compensation tables updated during service intervals.

IC Role / Device Role / Timing Role: Field-upgradable nonvolatile memory mapped into MCU's memory space, accessed via standard SRAM read/write instructions.

Use Value: 121-year data retention at +125 °C ensures calibration integrity over full vehicle lifecycle without periodic refresh or checksum validation.

Use Scenario: Maintaining cumulative torque error counts, motor phase imbalance history, and thermal derating events across 10,000+ ignition cycles.

IC Role / Device Role / Timing Role: Dedicated F-RAM block for safety-critical diagnostic data, isolated from main program memory and write-protected via hardware byte enables.

Use Value: UB/LB-controlled byte writes allow atomic updates to individual 16-bit fault registers - eliminating race conditions during concurrent EPS control loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile parallel memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
FM22L16-G from Cypress (now Infineon)	2-Mbit (128K × 16), 55 ns access, same TSOP-II 44-pin, but requires 3.0–3.6 V only	Higher density for extended log buffers; lacks 2.0 V support for low-voltage microcontrollers	Select when >1 Mbit capacity is needed and system VDD ≥3.0 V; retains identical timing and control logic
MB85RS1MT-FPN-G-JNE1 from Fujitsu	1-Mbit FRAM, SPI interface, 8-pin SOIC, 20 MHz max clock, no parallel bus or UB/LB pins	Requires MCU SPI peripheral and software driver; unsuitable for SRAM-bus drop-in replacement	Choose only for space-constrained designs where serial interface is acceptable and parallel timing is not required

Compared with FM22L16-G and MB85RS1MT-FPN-G-JNE1, CY15B101N-ZS60XE uniquely delivers 2.0–3.6 V operation, SRAM-pin-compatible parallel interface, and byte-selectable 16-bit bus - making it the sole option for legacy ECU upgrades requiring zero-hardware-change integration.

Availability

CY15B101N-ZS60XE is available at Aetrix Electronics and suitable for engine control units, ADAS event recorders, and electric power steering modules requiring stable component supply across automotive production lifecycles.

Supply support for CY15B101N-ZS60XE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability semiconductor solutions for automotive, industrial, and IoT applications, with emphasis on memory, PSoC, and connectivity.

CY15B101N belongs to Cypress's automotive F-RAM product line, engineered specifically to replace battery-backed SRAM in harsh-environment control systems where data integrity, endurance, and deterministic write timing are mission-critical.

FAQ

Is CY15B101N-ZS60XE pin-compatible with standard 64K × 16 SRAMs?

Yes - it uses an industry-standard 44-pin TSOP-II footprint with identical A0–A15, DQ0–DQ15, CE, WE, OE, and VDD/VSS pin assignments. UB and LB map to unused pins on most SRAMs and can be grounded if byte-select functionality is not used. No PCB redesign is required for drop-in replacement.

Does CY15B101N-ZS60XE require external components like batteries or capacitors?

No - it is a monolithic nonvolatile memory with no external energy storage. Unlike battery-backed SRAM, it retains data without batteries, supercapacitors, or charge pumps. The ZZ pin enables ultra-low-power sleep mode, reducing standby current to <1 µA without auxiliary circuitry.

Can CY15B101N-ZS60XE operate at 2.0 V while maintaining full specifications?

Yes - all electrical characteristics including 60 ns access time, 10¹³ endurance, and –40 °C to +125 °C operation are fully specified and tested at VDD = 2.0 V. This enables direct use with low-voltage MCUs such as NXP S32K144 or Renesas RH850/F1L without level-shifting.

How does page-mode operation improve performance in automotive logging?

Page-mode allows four sequential 16-bit word accesses within the same 2048-word row using only A1–A0 address changes - achieving ≤30 ns cycle time. In engine ECU logging, this enables burst capture of 16-sensor samples per crankshaft revolution without toggling CE or waiting for tRC, reducing CPU overhead by >40% versus random-access patterns.

CY15B101N-ZS60XE Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: F-RAM™

Package/Case:: 44-TSOP (0.400", 10.16mm Width)

Packaging:: Tray

Product Status:: Last Time Buy

Programmable:: -

Memory Type:: Non-Volatile

Memory Format:: FRAM

Technology:: FRAM (Ferroelectric RAM)

Memory Size:: 1Mbit

Memory Organization:: 64K x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 90ns

Access Time:: 90 ns

Voltage - Supply:: 2V ~ 3.6V

Operating Temperature:: -40°C ~ 125°C (TA)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: 44-TSOP II

CY15B101N-ZS60XE FAQ

1.How can I place an order for CY15B101N-ZS60XE through Aetrix?

Please submit a Request for Quotation (RFQ) for CY15B101N-ZS60XE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY15B101N-ZS60XE reliable?

The price and inventory of CY15B101N-ZS60XE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY15B101N-ZS60XE is usually 5 days.

3.What payment methods are accepted for CY15B101N-ZS60XE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY15B101N-ZS60XE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY15B101N-ZS60XE?

CY15B101N-ZS60XE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY15B101N-ZS60XE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY15B101N-ZS60XE?

For technical support, including CY15B101N-ZS60XE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY15B101N-ZS60XE requirements.

6.How does Aetrix verify that CY15B101N-ZS60XE is sourced from the original manufacturer or authorized distributors?

All CY15B101N-ZS60XE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY15B101N-ZS60XE meets industry standards.

7.What is the process for return or replacement of CY15B101N-ZS60XE?

All CY15B101N-ZS60XE units undergo pre-shipment inspection (PSI). If there is an issue with CY15B101N-ZS60XE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY15B101N-ZS60XE part is unused and in its original packaging.

Return procedure for CY15B101N-ZS60XE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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