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Infineon Technologies CY15B101N-ZS60XET
- Part No.:
- CY15B101N-ZS60XET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY15B101N-ZS60XET.pdf
- Description:
- IC FRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,285
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Product details
Overview
CY15B101N-ZS60XET from Cypress Semiconductor is a 1-Mbit (64K × 16) automotive-grade ferroelectric RAM (F-RAM™) with SRAM-compatible parallel interface, –40 °C to +125 °C operation, 60 ns access time, 1013 read/write endurance, and NoDelay™ nonvolatile writes. It serves as direct drop-in replacement for 64K × 16 SRAM in engine control units requiring frequent parameter logging without battery backup.
For engineers reviewing the CY15B101N-ZS60XET datasheet, CY15B101N-ZS60XET pinout, CY15B101N-ZS60XET application, or CY15B101N-ZS60XET equivalent, key selection criteria include its guaranteed automotive-E temperature range, page-mode 30 ns cycle time, byte-select configurable 128K × 8 mode, and absence of write latency or data polling requirements.
Technical Context
The CY15B101N-ZS60XET implements a parallel asynchronous interface with CE/WE/OE control logic and dual-byte enable (UB/LB) for flexible 16-bit or 8-bit data bus configuration. Its ferroelectric memory array is organized as eight 2048-row blocks, each with four column locations, enabling true page-mode access without internal address latching overhead.
It supports both CE-initiated and WE-initiated read/write cycles, with precharge triggered by CE HIGH or A15–A2 address change. Sleep mode is entered via ZZ pin assertion, reducing standby current to 120 µA while disabling all I/O except ZZ.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 1-Mbit (64K × 16), configurable as 128K × 8 using UB/LB controls |
| Access time | 60 ns - enables direct replacement of standard 64K × 16 SRAM without timing redesign |
| Endurance | 1013 read/write cycles - supports >10 years of continuous logging at 1 kHz write rate |
| Data retention | 121 years at +125 °C - eliminates need for battery backup or EEPROM wear leveling |
| Supply voltage | 2.0 V to 3.6 V - compatible with modern low-voltage automotive MCUs and power rails |
| Operating temperature | –40 °C to +125 °C (Automotive-E grade) - qualified per AEC-Q100 for under-hood applications |
| Package | 44-pin TSOP-II (400-mil) - surface-mount compatible with standard reflow profiles and automated assembly |
Pinout & Package
44-pin Thin Small Outline Package (TSOP-II), 400-mil body width, RoHS-compliant, surface-mount.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address inputs | 16-bit address bus; A1–A0 select column within 4-word page for page-mode operation |
| DQ0–DQ15 | Data I/O lines | 16-bit bidirectional data bus; driven only when OE LOW and corresponding UB/LB asserted |
| WE | Write Enable | Falling edge initiates write; rising edge completes immediate nonvolatile store (NoDelay™) |
| CE | Chip Enable | Falling edge latches full address; device remains active while CE LOW for SRAM-like operation |
| OE | Output Enable | Controls DQ bus drive; HI-Z when HIGH to prevent bus contention and reduce system current |
| UB / LB | Byte select | Enable upper (DQ15–DQ8) or lower (DQ7–DQ0) byte; allow 8-bit bus interfacing or 128K × 8 configuration |
| ZZ | Sleep mode | LOW enters ultra-low-power sleep (120 µA); must be HIGH for normal operation or tied to VDD if unused |
| VDD / VSS | Power / Ground | Single 2.0–3.6 V supply; no separate VPP or charge pump required |
Key Features
| Feature | Design Value |
|---|---|
| NoDelay™ writes | Immediate nonvolatile storage on WE rising edge - eliminates write latency, polling, and timeout handling in firmware |
| Page-mode 30 ns cycle time | Enables burst access to 4-word row with sub-30 ns consecutive reads/writes - improves logging throughput vs. standard SRAM |
| SRAM pinout compatibility | Direct 64K × 16 SRAM replacement without PCB redesign - same pin functions and timing envelope |
| Monolithic nonvolatility | No external battery, capacitor, or EEPROM controller needed - reduces BOM count and field failure modes |
| Automotive-E qualification | Guaranteed operation over –40 °C to +125 °C with AEC-Q100 stress testing - suitable for ECU, transmission, and ADAS modules |
Applications
| Engine Control Unit (ECU) Parameter Logging | Advanced Driver Assistance Systems (ADAS) Event Buffering |
|---|---|
Use Scenario: Continuous recording of sensor calibration offsets, fault codes, and runtime diagnostics during vehicle operation. IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory interfaced directly to MCU parallel bus; stores critical state between ignition cycles. Use Value: 1013 endurance enables >100 million ignition cycles with 100+ writes per cycle; 121-year retention ensures data survival across vehicle lifetime. | Use Scenario: Temporary storage of camera frame metadata, radar object lists, and timestamped collision alerts before flash upload. IC Role / Device Role / Timing Role: High-speed buffer between vision processor and main SoC; accepts burst writes during sensor capture windows. Use Value: Page-mode 30 ns cycle time allows 4× faster sequential writes than EEPROM; NoDelay™ prevents missed events during power transients. |
| Electric Power Steering (EPS) Torque Compensation | Body Control Module (BCM) Configuration Storage |
Use Scenario: Storing adaptive steering assist maps updated during vehicle learning phases and retained across battery disconnects. IC Role / Device Role / Timing Role: Parallel-interface nonvolatile memory mapped into MCU address space; accessed via standard SRAM read/write instructions. Use Value: 60 ns access time matches MCU bus timing; 2.0–3.6 V operation aligns with EPS 3.3 V rail; no voltage translation required. | Use Scenario: Holding user preferences (lighting profiles, mirror positions, door lock behavior) and module-specific calibration constants. IC Role / Device Role / Timing Role: Low-power configuration memory accessed infrequently but requiring guaranteed retention over 15+ years. Use Value: 120 µA standby current minimizes parasitic drain; 121-year retention exceeds automotive lifecycle requirements without refresh. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FM25V10-G | 1-Mbit F-RAM, 44-pin TSOP-II, 55 ns access, 2.7–3.6 V supply | Lacks Automotive-E qualification; rated –40 °C to +85 °C only | Select for industrial or commercial systems where extended temperature is not required |
| IS61WV102416BLL-10MLI | 1-Mbit battery-backed SRAM, 44-pin TSOP-II, 10 ns access, requires external battery/capacitor | Higher reliability risk due to battery aging, leakage, and solder joint fatigue | Select only if ultra-fast 10 ns access is mandatory and battery maintenance is acceptable |
Compared with FM25V10-G and IS61WV102416BLL-10MLI, the CY15B101N-ZS60XET uniquely delivers automotive-grade temperature assurance, monolithic nonvolatility, and guaranteed 1013 endurance - eliminating battery management, refresh routines, and thermal derating concerns in safety-critical ECUs.
Availability
CY15B101N-ZS60XET is available at Aetrix Electronics and suitable for engine control units, ADAS event recorders, electric power steering modules, and body control modules requiring stable component supply across long production lifecycles.
Supply support for CY15B101N-ZS60XET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability semiconductor solutions for automotive, industrial, and IoT applications, with emphasis on memory, microcontrollers, and connectivity.
The CY15B101N belongs to Cypress's automotive F-RAM product line, engineered specifically to replace battery-backed SRAM and legacy EEPROM in mission-critical automotive subsystems where data integrity, endurance, and temperature resilience are non-negotiable.
FAQ
Is CY15B101N-ZS60XET pin-compatible with standard 64K × 16 SRAMs?
Yes. It uses an industry-standard 44-pin TSOP-II footprint and identical pin functions (A0–A15, DQ0–DQ15, CE, WE, OE, UB, LB, VDD, VSS, ZZ). No PCB layout changes are needed for SRAM drop-in replacement, though ZZ must be tied to VDD if unused and pull-up on WE is recommended for power-cycle safety.
Does CY15B101N-ZS60XET require external hardware for nonvolatility?
No. It is a monolithic F-RAM device with built-in ferroelectric storage. Unlike battery-backed SRAM, it needs no external capacitor, battery, or charge-pump circuitry - reducing BOM cost, board area, and field failure modes related to power backup components.
What is the minimum write pulse width required for reliable operation?
The minimum WE pulse width is 30 ns for both read and write cycles. This is validated across the full –40 °C to +125 °C range and supports 33 MHz page-mode operation. The device guarantees immediate write completion on WE rising edge, with no additional timing constraints beyond standard SRAM tWC and tWP specifications.
Can CY15B101N-ZS60XET be used in 8-bit data bus configurations?
Yes. Using UB and LB pins, the device can operate in 128K × 8 mode: tie UB to VDD and LB to GND for lower-byte-only access, or vice versa for upper-byte-only. Both byte lanes may be enabled simultaneously for full 16-bit operation, providing flexible interface options for 8-bit or 16-bit microcontrollers.
CY15B101N-ZS60XET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- F-RAM™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- FRAM
- Technology:
- FRAM (Ferroelectric RAM)
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 90ns
- Access Time:
- 90 ns
- Voltage - Supply:
- 2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY15B101N-ZS60XET FAQ
1.How can I place an order for CY15B101N-ZS60XET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY15B101N-ZS60XET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY15B101N-ZS60XET reliable?
The price and inventory of CY15B101N-ZS60XET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY15B101N-ZS60XET is usually 5 days.
3.What payment methods are accepted for CY15B101N-ZS60XET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY15B101N-ZS60XET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY15B101N-ZS60XET?
CY15B101N-ZS60XET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY15B101N-ZS60XET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY15B101N-ZS60XET?
For technical support, including CY15B101N-ZS60XET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY15B101N-ZS60XET requirements.
6.How does Aetrix verify that CY15B101N-ZS60XET is sourced from the original manufacturer or authorized distributors?
All CY15B101N-ZS60XET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY15B101N-ZS60XET meets industry standards.
7.What is the process for return or replacement of CY15B101N-ZS60XET?
All CY15B101N-ZS60XET units undergo pre-shipment inspection (PSI). If there is an issue with CY15B101N-ZS60XET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY15B101N-ZS60XET part is unused and in its original packaging.
Return procedure for CY15B101N-ZS60XET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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