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Infineon Technologies CY15B101N-ZS60XM
- Part No.:
- CY15B101N-ZS60XM
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY15B101N-ZS60XM.pdf
- Description:
- IC FRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,058
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Product details
Overview
CY15B101N-ZS60XM from Infineon Technologies (formerly Cypress) is a 1-Mbit ferroelectric RAM (F-RAM™) logically organized as 64K × 16, operating over –55 °C to +125 °C with 2.0–3.6 V supply, 60 ns access time, and 1013 read/write endurance. It serves as nonvolatile memory in mission-critical data logging systems where rapid, reliable writes without delay are required.
For engineers reviewing the CY15B101N-ZS60XM datasheet, CY15B101N-ZS60XM pinout, CY15B101N-ZS60XM application, or CY15B101N-ZS60XM equivalent, key selection criteria include military-temperature SRAM-compatible parallel interface, NoDelay™ write architecture, 121-year data retention, and TSOP-II package compatibility with legacy board layouts.
Technical Context
The CY15B101N-ZS60XM implements a parallel asynchronous interface with CE/WE/OE control logic and dual byte-select (UB/LB) enabling true 16-bit or configurable 128K × 8 operation. Its ferroelectric memory array eliminates write latency and battery dependency while maintaining SRAM timing behavior.
It supports page-mode operation with 30 ns cycle time for intra-row accesses and automatic precharge on upper address (A15–A2) change or CE deassertion. Sleep mode (via ZZ pin) reduces standby current to ≤120 µA, and all operations complete within a single bus cycle-no polling or erase cycles required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1-Mbit (64K × 16), configurable as 128K × 8 using UB/LB controls |
| Access Time | 60 ns - enables direct replacement of standard 64K × 16 SRAMs without timing redesign |
| Write Endurance | 1013 cycles - supports high-frequency data logging (e.g., 1 kHz sampling for >300 years) |
| Data Retention | 121 years at +125 °C - validated nonvolatile storage without backup power or refresh |
| Operating Voltage | 2.0 V to 3.6 V - compatible with modern low-voltage microcontrollers and industrial rails |
| Temperature Range | –55 °C to +125 °C - qualified for military, aerospace, and under-hood automotive applications |
| Package | 44-pin TSOP-II (400-mil) - surface-mount compatible with existing SRAM footprint and reflow profiles |
Pinout & Package
44-pin thin small outline package (TSOP-II), 400-mil body width, surface-mount, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus; A1–A0 enable page-mode column addressing within a row |
| DQ0–DQ15 | Bidirectional Data I/O | 16-bit parallel data path; driven only when OE = LOW and corresponding UB/LB = LOW |
| WE | Write Enable | Falling edge initiates write; rising edge completes immediate nonvolatile store (NoDelay™) |
| CE | Chip Enable | Falling edge latches full address; enables CE-controlled or WE-controlled write modes |
| OE | Output Enable | Controls DQ bus drive; HI-Z when HIGH, preventing bus contention during invalid data windows |
| UB / LB | Upper/Lower Byte Select | Enable DQ15–DQ8 or DQ7–DQ0 independently; allow byte-level writes or 128K × 8 configuration |
| ZZ | Sleep Mode Control | LOW enters ultra-low-power state (≤120 µA); must be HIGH before any access |
| VDD / VSS | Power / Ground | 2.0–3.6 V supply; dual VSS pins provide noise isolation for analog-sensitive F-RAM core |
Key Features
| Feature | Design Value |
|---|---|
| NoDelay™ Writes | Writes complete within same bus cycle as reads-no wait states, no polling, no firmware overhead |
| SRAM Pin & Timing Compatibility | Industry-standard 64K × 16 parallel interface with identical pinout and AC timing-drop-in replacement |
| Monolithic Nonvolatility | Eliminates battery, capacitor, or EEPROM backup circuitry-reduces BOM count and field failure modes |
| Page-Mode Performance | 30 ns cycle time for sequential intra-row accesses-enables high-throughput buffering (e.g., CAN message queues) |
| Military Temperature Qualification | Guaranteed operation from –55 °C to +125 °C-validated for avionics, defense electronics, and downhole tools |
Applications
| Avionics Data Recorder | Industrial PLC Event Logger |
|---|---|
|
Use Scenario: Continuous capture of flight parameters (altitude, attitude, engine telemetry) with power-loss resilience. IC Role / Device Role / Timing Role: Nonvolatile buffer storing timestamped sensor data at 1 kHz; retains last 10 seconds of pre-crash data. Use Value: 1013 endurance ensures >30 years of daily flight logging; 121-year retention guarantees forensic integrity without maintenance. |
Use Scenario: Logging machine-state transitions, fault codes, and operator actions in factory automation controllers. IC Role / Device Role / Timing Role: Parallel-interface nonvolatile scratchpad replacing battery-backed SRAM in real-time deterministic control loops. Use Value: Eliminates battery replacement service intervals and moisture-induced BBSRAM failures in humid manufacturing environments. |
| Downhole Oilfield Sensor | Military Radio Secure Memory |
|
Use Scenario: Storing calibration coefficients, pressure/temperature logs, and diagnostic snapshots in drill-string telemetry modules. IC Role / Device Role / Timing Role: High-reliability nonvolatile memory operating continuously at +125 °C in sealed, vibration-prone housings. Use Value: TSOP-II package withstands shock/vibration; ferroelectric process avoids data corruption from gamma radiation or thermal cycling. |
Use Scenario: Secure key storage and encrypted message buffering in tactical HF/VHF radios with frequent power cycling. IC Role / Device Role / Timing Role: Tamper-resistant, fast-write memory for cryptographic session keys and voice packet headers. Use Value: NoDelay™ writes prevent key loss during brownout; military temp rating ensures operability in desert/arctic deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile parallel-memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY15B101QN-SX60XCT | Same F-RAM core, but commercial temperature range (0 °C to +70 °C) and lead-free 44-pin SOIC package | Not qualified for military/aerospace use; unsuitable for extended temperature or high-shock environments | Select only for cost-sensitive industrial control where full military spec is unnecessary |
| FM28V100-60-BG | 1-Mbit F-RAM in 48-pin BGA; 60 ns access, but requires PCB redesign and has different pin mapping | Lacks TSOP-II footprint compatibility; no direct drop-in replacement capability | Consider only for new designs prioritizing board area reduction over legacy layout reuse |
Compared with CY15B101QN-SX60XCT and FM28V100-60-BG, the CY15B101N-ZS60XM uniquely delivers military-temperature qualification, TSOP-II pin compatibility with SRAM footprints, and guaranteed 1013 endurance-all without requiring layout or firmware changes.
Availability
CY15B101N-ZS60XM is available at Aetrix Electronics and suitable for avionics data recorders, industrial PLC event loggers, and downhole oilfield sensors requiring stable component supply across extended product lifecycles.
Supply support for CY15B101N-ZS60XM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains the F-RAM portfolio as part of its high-reliability memory solutions for mission-critical systems.
The CY15B101N belongs to Infineon's military-grade F-RAM product line, engineered specifically for applications demanding unlimited write endurance, zero write latency, and guaranteed data retention in harsh environments.
FAQ
Is CY15B101N-ZS60XM a direct pin-for-pin replacement for standard 64K × 16 SRAMs?
Yes. It uses an industry-standard 44-pin TSOP-II footprint with identical A0–A15, DQ0–DQ15, CE, WE, OE, UB, LB, VDD, and VSS pin assignments. No PCB redesign is needed-only ensure ZZ is tied to VDD if sleep mode is unused, and add a pull-up on WE to prevent corruption during power-up.
Does CY15B101N-ZS60XM require external hardware for nonvolatility, such as batteries or capacitors?
No. It is monolithically nonvolatile via ferroelectric memory technology. Data is retained for 121 years at +125 °C without any backup power source, eliminating battery leakage, capacitor aging, and associated reliability risks found in BBSRAM modules.
What is the significance of "NoDelay™ writes" in system-level design?
NoDelay™ means write operations complete within the same bus cycle as reads-no wait states, no status polling, and no firmware delays. This enables deterministic real-time logging (e.g., capturing transient faults in <1 µs) and simplifies software by removing EEPROM-style write-complete checks.
Can CY15B101N-ZS60XM operate reliably in high-vibration or high-radiation environments?
Yes. Its monolithic silicon construction (no moving parts or electrolytes), TSOP-II package robustness, and ferroelectric process immunity to single-event upsets make it suitable for downhole tools, avionics, and nuclear instrumentation-unlike battery-backed SRAMs or flash-based alternatives.
CY15B101N-ZS60XM Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- F-RAM™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FRAM
- Technology:
- FRAM (Ferroelectric RAM)
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 90ns
- Access Time:
- 90 ns
- Voltage - Supply:
- 2V ~ 3.6V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY15B101N-ZS60XM FAQ
1.How can I place an order for CY15B101N-ZS60XM through Aetrix?
Please submit a Request for Quotation (RFQ) for CY15B101N-ZS60XM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY15B101N-ZS60XM reliable?
The price and inventory of CY15B101N-ZS60XM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY15B101N-ZS60XM is usually 5 days.
3.What payment methods are accepted for CY15B101N-ZS60XM?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY15B101N-ZS60XM transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY15B101N-ZS60XM?
CY15B101N-ZS60XM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY15B101N-ZS60XM order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY15B101N-ZS60XM?
For technical support, including CY15B101N-ZS60XM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY15B101N-ZS60XM requirements.
6.How does Aetrix verify that CY15B101N-ZS60XM is sourced from the original manufacturer or authorized distributors?
All CY15B101N-ZS60XM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY15B101N-ZS60XM meets industry standards.
7.What is the process for return or replacement of CY15B101N-ZS60XM?
All CY15B101N-ZS60XM units undergo pre-shipment inspection (PSI). If there is an issue with CY15B101N-ZS60XM, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY15B101N-ZS60XM part is unused and in its original packaging.
Return procedure for CY15B101N-ZS60XM:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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