Infineon Technologies CY15B102N-ZS60XAT

Overview

CY15B102N-ZS60XAT from Cypress Semiconductor is a 2-Mbit (128K × 16) automotive-grade ferroelectric RAM (F-RAM) with SRAM-compatible parallel interface, 60-ns access time, 10¹⁴ read/write endurance, and 151-year data retention at –40 °C to +85 °C. It serves as nonvolatile memory in vehicle event data recorders requiring rapid, frequent writes without write delay.

For engineers reviewing the CY15B102N-ZS60XAT datasheet, CY15B102N-ZS60XAT pinout, CY15B102N-ZS60XAT application, or CY15B102N-ZS60XAT equivalent, key selection criteria include NoDelay™ write timing, software-configurable sector write protection, TSOP-II 44-pin compatibility with legacy SRAM layouts, and AEC-Q100 Grade 2 qualification for automotive embedded systems.

Technical Context

The CY15B102N-ZS60XAT implements a monolithic ferroelectric memory array organized as eight 16K × 16 blocks, supporting both CE- and WE-controlled read/write cycles with identical 60-ns access time. Its architecture enables true SRAM drop-in replacement without external capacitors, batteries, or firmware wait states.

Page-mode operation uses A1–A0 to cycle through four column locations per row with ≤30-ns cycle time, while software write protection is implemented via a deterministic six-read/three-write address/command sequence that modifies nonvolatile sector lock bits without altering memory contents.

Key Specifications

Pinout & Package

Package: 44-pin Thin Small Outline Package (TSOP-II), 400-mil width, RoHS-compliant surface-mount.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile parallel memory applications.

Compared with FM22L16-60-BG and AS6C1008-55ZIN, the CY15B102N-ZS60XAT delivers superior system-level reliability by eliminating battery dependency, enabling direct TSOP-II footprint replacement, and providing deterministic write completion without firmware intervention - critical for ASIL-B functional safety domains.

Availability

CY15B102N-ZS60XAT is available at Aetrix Electronics and suitable for automotive event data recorders, ADAS sensor fusion units, and telematics control units requiring stable component supply under AEC-Q100 qualification and long-term production continuity.

Supply support for CY15B102N-ZS60XAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability semiconductor solutions for automotive, industrial, and IoT applications, with emphasis on nonvolatile memory and microcontroller integration.

The CY15B102N belongs to Cypress's automotive F-RAM product line, engineered specifically to replace battery-backed SRAM in mission-critical automotive subsystems where data integrity, endurance, and qualification compliance are mandatory.

FAQ

Is CY15B102N-ZS60XAT pin-compatible with standard 128K × 16 SRAMs?

Yes. It uses an industry-standard parallel pinout matching devices like AS6C1008 and IS61LV1024, including identical A0–A16, DQ0–DQ15, CE, WE, OE, and VDD/VSS placement. UB and LB pins are additional but can be grounded for 16-bit operation, preserving full drop-in compatibility.

Does CY15B102N-ZS60XAT require external hardware for write protection?

No. Write protection is implemented entirely in firmware via a documented six-read/three-write command sequence that configures eight nonvolatile sector lock bits. No external WP pins, jumpers, or resistors are needed - simplifying layout and reducing BOM count.

What is the minimum VDD required for reliable operation at –40 °C?

The device is fully specified down to 2.0 V across the full automotive temperature range (–40 °C to +85 °C). At –40 °C, 2.0 V ensures guaranteed 60-ns access time, 10¹⁴ endurance, and proper sleep mode entry/exit timing per datasheet Table 9 and Figure 16.

Can CY15B102N-ZS60XAT operate in page mode across row boundaries?

No. Page mode is restricted to four column addresses (A1–A0) within a single row. Accessing a new row requires either CE deassertion/reassertion or change of upper address bits (A16–A2), triggering internal precharge. This behavior is identical to high-speed SRAM page modes and ensures timing predictability.