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Infineon Technologies CY15B102N-ZS60XE
- Part No.:
- CY15B102N-ZS60XE
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY15B102N-ZS60XE.pdf
- Description:
- IC FRAM 2MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:4,103
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Product details
Overview
CY15B102N-ZS60XE from Cypress Semiconductor is a 2-Mbit (128K × 16) automotive-grade ferroelectric RAM (F-RAM) with NoDelay™ writes, 1013 read/write endurance, and 121-year data retention. It operates across –40 °C to +125 °C, features SRAM-compatible parallel interface, and delivers 60 ns access time in a 44-pin TSOP-II package - deployed in automotive powertrain control modules requiring frequent nonvolatile logging without battery backup.
For engineers reviewing the CY15B102N-ZS60XE datasheet, CY15B102N-ZS60XE pinout, CY15B102N-ZS60XE application, or CY15B102N-ZS60XE equivalent, key selection criteria include write-cycle endurance, zero-write-delay timing behavior, byte-selectable 16-bit bus operation, software-configurable sector write protection, and AEC-Q100-compliant temperature performance.
Technical Context
The CY15B102N-ZS60XE implements a monolithic ferroelectric memory array organized as eight 16K × 16 blocks, each supporting page-mode access via A1–A0 column addressing. Its SRAM-compatible interface uses CE/WE/OE control logic with dual-byte enable (UB/LB) for 8-bit sub-access, eliminating external glue logic in legacy SRAM-replacement designs.
It supports two distinct write initiation modes: CE-controlled (WE asserted before CE fall) and WE-controlled (CE fall initiates read, then WE fall triggers write). Sleep mode is activated by pulling ZZ low, reducing standby current to 120 µA while preserving all nonvolatile state - no initialization or wake-up latency beyond tZZEX = 100 ns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 2 Mbit (128K × 16), configurable as 256K × 8 using UB/LB controls |
| Write endurance | 1013 cycles - enables real-time event logging in automotive black-box recorders without wear leveling |
| Data retention | 121 years at +125 °C - eliminates need for periodic refresh or backup power |
| Access time | 60 ns - matches standard SRAM timing for drop-in replacement in legacy controllers |
| Supply voltage | 2.0 V to 3.6 V - compatible with modern low-voltage automotive domains (e.g., 2.5 V or 3.3 V rails) |
| Operating temperature | –40 °C to +125 °C (Automotive-E grade) - qualified per AEC-Q100 Grade 1 requirements |
| Active current | 7 mA (typ) - enables low-power CAN node memory buffering during active diagnostics |
Pinout & Package
44-pin Thin Small Outline Package (TSOP-II), 400-mil body width, surface-mount, RoHS-compliant. Pin 1 marked by notch or dot; top view shown in datasheet Figure 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Input | 17-bit address bus; A1–A0 enable 4-column page-mode access within each 4096-row block |
| DQ0–DQ15 | I/O | 16-bit bidirectional data bus; split into upper (DQ8–DQ15) and lower (DQ0–DQ7) bytes via UB/LB |
| WE | Input | Write Enable - rising edge commits data; falling edge latches new column address in page mode |
| CE | Input | Chip Enable - falling edge latches full address (A16–A2); initiates read or write cycle |
| OE | Input | Output Enable - controls DQ bus drive; allows partial bus driving to reduce system noise and supply transients |
| UB / LB | Input | Upper/Lower Byte Select - enables independent 8-bit access; both can be tied low for full 16-bit operation |
| ZZ | Input | Sleep Mode - LOW disables all internal circuitry except sleep-state retention; must be HIGH for normal operation |
| VDD / VSS | Power | Single 2.0–3.6 V supply and ground; no separate I/O voltage required |
Key Features
| Feature | Design Value |
|---|---|
| NoDelay™ write architecture | Writes complete in same cycle as reads - eliminates polling, timeouts, and firmware overhead in safety-critical logging |
| Software-configurable sector protection | Eight 16K × 16 sectors individually protected via nonvolatile command sequence - prevents accidental overwrites in boot code or calibration tables |
| Page-mode operation | 30 ns cycle time for sequential column accesses - accelerates firmware update verification and diagnostic data burst writes |
| Monolithic battery-free nonvolatility | Eliminates BBSRAM rework, moisture sensitivity, and end-of-life battery leakage risks - certified for under-hood deployment |
| SRAM pin- and timing-compatible interface | Direct replacement for IS61LV12816L or similar 128K × 16 SRAMs - no PCB redesign or timing constraint changes required |
Applications
| Engine Control Unit (ECU) Fault Logging | Advanced Driver Assistance System (ADAS) Sensor Calibration Storage |
|---|---|
Use Scenario: Continuous recording of misfire events, OBD-II fault codes, and sensor anomalies during engine runtime. IC Role / Device Role / Timing Role: Nonvolatile buffer storing timestamped diagnostic data with microsecond-resolution write commits. Use Value: 1013 endurance ensures >15 years of daily 10,000-event logging without degradation; NoDelay writes prevent data loss during sudden power interruption. |
Use Scenario: Storing factory-calibrated offset/gain coefficients for radar and camera sensors across vehicle lifetime. IC Role / Device Role / Timing Role: Secure, field-updatable parameter storage accessed only during boot or service mode. Use Value: Software write-protect prevents corruption during ECU reflashing; 121-year retention guarantees calibration integrity over full vehicle lifecycle. |
| Electric Power Steering (EPS) Torque Profile Storage | Automotive Gateway Module Boot Configuration |
Use Scenario: Storing adaptive steering assist maps updated during vehicle learning cycles and road condition adaptation. IC Role / Device Role / Timing Role: High-speed parallel memory enabling real-time torque map swaps during dynamic maneuvers. Use Value: 60 ns access + page-mode support allows <1 µs map switching latency; TSOP-II package withstands mechanical vibration in steering column mounting. |
Use Scenario: Holding secure boot configuration flags, CAN FD routing tables, and firmware signature keys in multi-protocol gateways. IC Role / Device Role / Timing Role: Trusted nonvolatile configuration store accessed early in boot sequence prior to security enclave initialization. Use Value: Zero-write-delay enables atomic flag updates during fail-safe transitions; AEC-Q100 Grade 1 rating ensures reliability in 125 °C junction environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FM22L16-G | 2-Mbit F-RAM in 44-pin TSOP-II, but rated only to +85 °C industrial range; lacks AEC-Q100 qualification | Not suitable for under-hood automotive use; limited to infotainment or body control modules | Select only if operating ambient stays ≤+85 °C and AEC-Q100 compliance is not required |
| IS62WV12816BLL-55TLI | Battery-backed SRAM (BBSRAM); requires external lithium coin cell and associated charge management circuitry | Introduces battery leakage, shelf-life limits, and rework complexity; fails AEC-Q200 vibration testing | Use only where existing BBSRAM footprint must be retained and long-term maintenance access is guaranteed |
Compared with FM22L16-G and IS62WV12816BLL-55TLI, CY15B102N-ZS60XE uniquely combines automotive temperature qualification, monolithic construction, and true zero-delay writes - making it the sole option for safety-critical, high-cycle, battery-free nonvolatile storage in powertrain and ADAS systems.
Availability
CY15B102N-ZS60XE is available at Aetrix Electronics and suitable for automotive powertrain control, ADAS sensor calibration, and electric power steering systems requiring stable component supply across extended product lifecycles.
Supply support for CY15B102N-ZS60XE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability semiconductor solutions for automotive, industrial, and IoT applications, with global R&D and manufacturing infrastructure.
CY15B102N belongs to Cypress's Automotive-E F-RAM product line, engineered specifically to replace battery-backed SRAM and serial EEPROM in mission-critical automotive subsystems demanding extreme endurance and zero-write-latency.
FAQ
Is CY15B102N-ZS60XE pin-compatible with standard 128K × 16 SRAMs?
Yes - it uses an industry-standard 44-pin TSOP-II footprint and identical pin assignments for A0–A16, DQ0–DQ15, CE, WE, OE, UB, LB, VDD, and VSS. No PCB layout changes are needed when replacing devices such as IS61LV12816L or CY62128ELL-55ZSXI in existing designs.
Does CY15B102N-ZS60XE require external hardware write protection?
No - it integrates nonvolatile software write protection across eight independent 16K × 16 sectors. Protection is enabled via a documented six-read/three-write address/data sequence; no external WP pins or resistors are required, simplifying board design and improving field reliability.
What is the minimum pulse width required for WE and CE signals?
The minimum WE pulse width is 25 ns and minimum CE pulse width is 30 ns, per AC switching characteristics on page 12 of the datasheet. These values ensure reliable latching of address and data under worst-case voltage and temperature conditions across the Automotive-E range.
Can CY15B102N-ZS60XE operate at 2.0 V while maintaining full speed performance?
Yes - all specified timing parameters (60 ns access, 90 ns cycle) are guaranteed down to VDD = 2.0 V at –40 °C to +125 °C. This enables direct integration into 2.5 V or 3.3 V domains with margin, and supports brown-out resilience in automotive start-stop scenarios.
CY15B102N-ZS60XE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- F-RAM™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Last Time Buy
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- FRAM
- Technology:
- FRAM (Ferroelectric RAM)
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 90ns
- Access Time:
- 90 ns
- Voltage - Supply:
- 2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY15B102N-ZS60XE FAQ
1.How can I place an order for CY15B102N-ZS60XE through Aetrix?
Please submit a Request for Quotation (RFQ) for CY15B102N-ZS60XE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY15B102N-ZS60XE reliable?
The price and inventory of CY15B102N-ZS60XE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY15B102N-ZS60XE is usually 5 days.
3.What payment methods are accepted for CY15B102N-ZS60XE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY15B102N-ZS60XE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY15B102N-ZS60XE?
CY15B102N-ZS60XE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY15B102N-ZS60XE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY15B102N-ZS60XE?
For technical support, including CY15B102N-ZS60XE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY15B102N-ZS60XE requirements.
6.How does Aetrix verify that CY15B102N-ZS60XE is sourced from the original manufacturer or authorized distributors?
All CY15B102N-ZS60XE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY15B102N-ZS60XE meets industry standards.
7.What is the process for return or replacement of CY15B102N-ZS60XE?
All CY15B102N-ZS60XE units undergo pre-shipment inspection (PSI). If there is an issue with CY15B102N-ZS60XE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY15B102N-ZS60XE part is unused and in its original packaging.
Return procedure for CY15B102N-ZS60XE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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