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Infineon Technologies CY15B102N-ZS60XET
- Part No.:
- CY15B102N-ZS60XET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY15B102N-ZS60XET.pdf
- Description:
- IC FRAM 2MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:3,143
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Product details
Overview
CY15B102N-ZS60XET from Cypress Semiconductor is a 2-Mbit (128K × 16) automotive-grade ferroelectric RAM (F-RAM) with SRAM-compatible parallel interface, 60 ns access time, –40 °C to +125 °C operation, and 1013 read/write endurance. It serves as nonvolatile memory in safety-critical automotive control units requiring rapid, reliable data logging without battery backup.
For engineers reviewing the CY15B102N-ZS60XET datasheet, CY15B102N-ZS60XET pinout, CY15B102N-ZS60XET application, or CY15B102N-ZS60XET equivalent, key selection criteria include NoDelay™ write capability, software-configurable block write-protect, TSOP-II package compatibility, and AEC-Q100-aligned endurance/reliability under thermal stress.
Technical Context
The CY15B102N-ZS60XET implements a parallel-interface F-RAM array organized as eight 16K × 16 blocks, each supporting page-mode access via A1–A0 column addressing. Its ferroelectric cell structure enables true nonvolatility with zero write latency and eliminates need for write-cycle polling or wear leveling.
It operates as a drop-in SRAM replacement: CE/WE/OE control logic mirrors standard asynchronous SRAM timing, supports byte-select (UB/LB) for 8-bit mode configuration, and enters low-power sleep mode via dedicated ZZ pin-enabling deterministic power-state transitions in automotive ECU firmware.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 2 Mbit (128K × 16), configurable as 256K × 8 using UB/LB controls |
| Access time | 60 ns max - enables direct replacement of 70 ns SRAMs without timing margin loss |
| Write endurance | 1013 cycles - supports >100 years of continuous logging at 1 kHz write rate |
| Data retention | 121 years at +125 °C - validated per AEC-Q100 Grade 1 requirements |
| Supply voltage | 2.0 V to 3.6 V - compatible with automotive 3.3 V rail and brown-out tolerant |
| Operating temperature | –40 °C to +125 °C - qualified for engine bay and transmission control applications |
| Active current | 7 mA typical - reduces MCU subsystem power budget vs. EEPROM or flash-based loggers |
Pinout & Package
Package: 44-pin Thin Small Outline Package (TSOP-II), 400-mil width, surface-mount, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address input | 17-bit address bus latched on CE falling edge; A1–A0 enable 4-column page-mode access |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional bus; driven only when OE LOW and corresponding UB/LB asserted |
| WE | Write enable | Rising edge triggers immediate nonvolatile write; falling edge latches new column address in page mode |
| CE | Chip enable | Falling edge initiates memory cycle (read or write); rising edge triggers internal precharge |
| OE | Output enable | Controls DQ bus drive; HI-Z when HIGH - prevents bus contention during invalid data windows |
| UB / LB | Byte select | Enable upper/lower 8-bit lanes independently; allow 8-bit system interfacing or partial writes |
| ZZ | Sleep control | LOW forces ultra-low-power state (120 µA standby); must be HIGH before any access |
| VDD / VSS | Power / ground | Single 2.0–3.6 V supply; no separate VPP or charge pump required |
Key Features
| Feature | Design Value |
|---|---|
| NoDelay™ writes | Writes complete in same cycle as reads - eliminates firmware wait states and polling loops |
| Software block write-protect | Eight independent 16K × 16 sectors protected via nonvolatile command sequence - no external hardware lock |
| SRAM pinout compatibility | Industry-standard 128K × 16 layout - enables PCB reuse and firmware porting from legacy SRAM designs |
| Page-mode operation | 30 ns cycle time within row - accelerates sequential logging (e.g., CAN message buffers or sensor snapshots) |
| Automotive-E qualification | Guaranteed operation across full –40 °C to +125 °C range with AEC-Q100 stress testing compliance |
Applications
| Engine Control Unit (ECU) Data Logger | Advanced Driver Assistance System (ADAS) Event Recorder |
|---|---|
|
Use Scenario: Continuous recording of misfire counts, knock sensor samples, and fuel trim corrections during engine runtime. IC Role / Device Role / Timing Role: Nonvolatile buffer between MCU and flash storage - captures transient events before power loss. Use Value: 1013 endurance ensures >15-year field life without degradation; 60 ns access enables real-time capture at 16 MHz bus clock. |
Use Scenario: Storing pre-crash video metadata, radar object trajectories, and brake actuation timestamps triggered by collision detection. IC Role / Device Role / Timing Role: High-reliability ring buffer for time-critical ADAS event capture with deterministic write latency. Use Value: NoDelay™ writes guarantee timestamp accuracy within ±100 ns; 121-year retention preserves forensic data across vehicle lifetime. |
| Transmission Control Module (TCM) Calibration Storage | Electric Power Steering (EPS) Fault History Log |
|
Use Scenario: Storing adaptive shift-point adjustments, clutch wear compensation values, and gear ratio calibration coefficients updated during vehicle learning cycles. IC Role / Device Role / Timing Role: Nonvolatile parameter store accessed during startup and relearn routines - requires guaranteed write success without retries. Use Value: Software write-protect prevents accidental overwrites of calibrated parameters; TSOP-II package withstands mechanical vibration in drivetrain mounting. |
Use Scenario: Logging torque sensor anomalies, motor phase errors, and EPS controller resets across 100,000+ ignition cycles. IC Role / Device Role / Timing Role: Fail-safe diagnostic memory that retains fault codes even after battery disconnect or ECU reset. Use Value: Monolithic construction eliminates battery dependency; 125 °C rating matches EPS module thermal envelope near steering rack. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile parallel-memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FM22L16-G from Cypress (now Infineon) | 2 Mbit F-RAM, but 48-pin TSOPII, 55 ns access, 2.7–3.6 V only | Lacks automotive temperature grade (–40 °C to +85 °C only); no ZZ sleep pin | Select only for industrial systems with narrower voltage/temp range and existing 48-pin footprint |
| AT25DF041A-SSH-T from Adesto (now Dialog) | 4 Mbit SPI NOR flash, 8-pin SOIC, 3.3 V, 100k write cycles | Serial interface, requires firmware driver overhead, no true byte-write concurrency | Use only where board space is constrained and write frequency is <100 Hz; not suitable for real-time logging |
Compared with FM22L16-G and AT25DF041A-SSH-T, CY15B102N-ZS60XET uniquely delivers automotive-grade temperature support, parallel SRAM timing, and unlimited endurance - making it the only option for high-frequency, mission-critical automotive data capture without system-level complexity.
Availability
CY15B102N-ZS60XET is available at Aetrix Electronics and suitable for engine control units, ADAS event recorders, and electric power steering modules requiring stable component supply across extended automotive product lifecycles.
Supply support for CY15B102N-ZS60XET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability semiconductor solutions for automotive, industrial, and IoT applications, with deep expertise in nonvolatile memory and microcontroller integration.
CY15B102N belongs to Cypress's Automotive-E F-RAM product line, engineered specifically for AEC-Q100-compliant, battery-free nonvolatile data storage in harsh-temperature automotive subsystems.
FAQ
Is CY15B102N-ZS60XET pin-compatible with standard 128K × 16 SRAMs?
Yes - it uses an industry-standard 44-pin TSOP-II footprint with identical A0–A16, DQ0–DQ15, CE, WE, OE, UB, LB, VDD, and VSS pin assignments. No PCB redesign is needed for SRAM drop-in replacement, though ZZ pin must be tied to VDD if unused.
Does CY15B102N-ZS60XET require external hardware for write protection?
No - it implements nonvolatile, software-controlled block write-protection across eight 16K × 16 sectors using a defined six-read/three-write address/data sequence. No external WP pins, jumpers, or security fuses are required.
What is the minimum VDD voltage for guaranteed operation at +125 °C?
The device is fully specified down to 2.0 V across the entire –40 °C to +125 °C range. At +125 °C, DC characteristics including tAA (60 ns), tWC (90 ns), and write endurance remain valid at 2.0 V, per Table 9 in the datasheet.
Can CY15B102N-ZS60XET be used in page-mode writes across row boundaries?
No - page-mode operation is restricted to four column addresses (A1–A0) within a single 4096-row block. Crossing row boundaries (A16–A2 change) terminates page mode and requires CE reassertion or precharge delay, per Figure 11 timing diagram.
CY15B102N-ZS60XET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- F-RAM™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- FRAM
- Technology:
- FRAM (Ferroelectric RAM)
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 90ns
- Access Time:
- 90 ns
- Voltage - Supply:
- 2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY15B102N-ZS60XET FAQ
1.How can I place an order for CY15B102N-ZS60XET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY15B102N-ZS60XET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY15B102N-ZS60XET reliable?
The price and inventory of CY15B102N-ZS60XET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY15B102N-ZS60XET is usually 5 days.
3.What payment methods are accepted for CY15B102N-ZS60XET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY15B102N-ZS60XET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY15B102N-ZS60XET?
CY15B102N-ZS60XET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY15B102N-ZS60XET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY15B102N-ZS60XET?
For technical support, including CY15B102N-ZS60XET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY15B102N-ZS60XET requirements.
6.How does Aetrix verify that CY15B102N-ZS60XET is sourced from the original manufacturer or authorized distributors?
All CY15B102N-ZS60XET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY15B102N-ZS60XET meets industry standards.
7.What is the process for return or replacement of CY15B102N-ZS60XET?
All CY15B102N-ZS60XET units undergo pre-shipment inspection (PSI). If there is an issue with CY15B102N-ZS60XET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY15B102N-ZS60XET part is unused and in its original packaging.
Return procedure for CY15B102N-ZS60XET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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