Infineon Technologies CY15B102QN-50LHXI

Overview

CY15B102QN-50LHXI from Infineon is a 2 Mb serial ferroelectric RAM (F-RAM) organized as 256K × 8, operating over SPI at up to 50 MHz with 1.8 V–3.6 V supply, 10¹⁵ write endurance, and 151-year data retention. It serves as a nonvolatile memory replacement for EEPROM/flash in real-time data logging, industrial control registers, and power-fail-safe parameter storage.

For engineers reviewing the CY15B102QN-50LHXI datasheet, CY15B102QN-50LHXI pinout, CY15B102QN-50LHXI application, or CY15B102QN-50LHXI equivalent, this device delivers instant nonvolatile writes, zero write latency, hardware/software write protection, and SPI Mode 0/3 compatibility - critical for high-cycle-count, low-power embedded systems requiring deterministic timing and long-term reliability without wear leveling.

Technical Context

The CY15B102QN-50LHXI implements a true SPI slave interface with no internal write buffers or polling requirements: each byte written commits immediately to nonvolatile memory at bus speed. Its ferroelectric core eliminates erase-before-write delays and enables full 10¹⁵ cycle endurance without degradation.

It integrates a dedicated 256-byte special sector that survives up to three reflow cycles, plus Device ID (manufacturer + product ID), Unique ID, and user-writable 8-byte serial number registers - all accessible via standardized SPI opcodes without external configuration.

Key Specifications

Pinout & Package

Package: 8-pin SOIC (300 mil), RoHS-compliant, surface-mount. Pinout validated per Infineon datasheet Rev. *D (2022-09-12), Figure 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Compared with CY15B102QSN-50LHXI, the SOIC variant offers easier prototyping and legacy board compatibility; versus AT25DF021A, it trades flash's higher density scalability for deterministic write latency, 10¹⁰× greater endurance, and true single-byte nonvolatile updates.

Availability

CY15B102QN-50LHXI is available at Aetrix Electronics and suitable for industrial data loggers, smart metering systems, and PLC I/O modules requiring stable component supply, long-life data integrity, and zero-latency nonvolatile writes.

Supply support for CY15B102QN-50LHXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensing, and memory solutions for industrial, automotive, and IoT markets.

The EXCELON™ LP F-RAM product line targets high-reliability, high-endurance nonvolatile memory applications where flash and EEPROM fail - specifically addressing write-cycle-limited, low-power, and mission-critical data capture use cases.

FAQ

What is the maximum SPI clock frequency supported by CY15B102QN-50LHXI?

The device supports up to 50 MHz SPI clock frequency across its full industrial temperature range (–40°C to +85°C), as verified in AC switching characteristics Table 12 of the official datasheet. This enables byte-write commit times under 200 ns, with no internal wait states or clock stretching - unlike serial flash devices that throttle bus speed during program operations.

Does CY15B102QN-50LHXI require external high-voltage programming or erase pulses?

No. The ferroelectric memory cell operates at standard VDD (1.8–3.6 V) with no high-voltage charge pumps or erase cycles. All writes occur synchronously with the SPI clock using standard logic-level signals - eliminating complex power sequencing, erase suspend/resume logic, and associated firmware overhead required by flash or EEPROM.

How is the 256-byte special sector physically isolated from main memory?

The special sector resides in a separate, hardened F-RAM sub-array with distinct word-line drivers and retention-optimized ferroelectric film thickness. It is accessed via unique opcodes (0x77/0x78) and retains data through ≥3 JEDEC J-STD-020D reflow profiles (peak 260°C) - confirmed by Infineon reliability testing in Section 8 of the datasheet.

Can the WP pin be left unconnected in a design?

No. Per datasheet Table 1, the WP pin must be tied to VDD if not actively used - floating WP may cause undefined Status Register write behavior or intermittent lockout. When WPEN = 1 in the Status Register, a LOW WP signal blocks all Status Register writes, making proper termination essential for predictable protection behavior.