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Infineon Technologies CY15B102QN-50SXET

Part No.:
CY15B102QN-50SXET
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
8-SOIC (0.209", 5.30mm Width)
Datasheet:
AetrixCY15B102QN-50SXET.pdf
Description:
IC FRAM 2MBIT SPI 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,417

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Product details

Overview

CY15B102QN-50SXET from Infineon is an automotive-grade 2 Mb serial ferroelectric RAM (F-RAM) organized as 256K × 8, operating over 1.8 V to 3.6 V with SPI interface up to 50 MHz, AEC-Q100 Grade 1 qualified (–40°C to +125°C), and delivering 1013 write cycles with 121-year data retention - deployed in engine control units for real-time sensor logging.

For engineers reviewing the CY15B102QN-50SXET datasheet, CY15B102QN-50SXET pinout, CY15B102QN-50SXET application, or CY15B102QN-50SXET equivalent, key selection considerations include SPI mode 0/3 compatibility, hardware/software write protection granularity (1/4, 1/2, full array), dedicated 256-byte reflow-survivable sector, and sub-µA hibernate current for always-on automotive subsystems.

Technical Context

The CY15B102QN-50SXET implements a true nonvolatile RAM architecture using lead zirconate titanate (PZT) ferroelectric capacitors, enabling byte-level random writes at bus speed without erase cycles or write latency. Its SPI slave logic supports dual modes (0 and 3), with CS-active-low protocol requiring opcode + 3-byte address for all memory accesses.

Internal circuitry includes a nonvolatile status register with WPEN bit controlling hardware write protection via the WP pin, a dedicated 256-byte special sector with guaranteed survival through three standard reflow cycles, and separate Device ID (manufacturer + product ID) and writable 8-byte serial number registers - all accessible via defined opcodes.

Key Specifications

Parameter Value and Actual Design Meaning
Memory density 2 Mb (256K × 8 bits); enables storage of >32 KB of telemetry or calibration data without wear leveling.
Write endurance 1013 cycles; supports continuous logging at 1 kHz for >300 years without degradation.
Data retention 121 years at +125°C; ensures firmware parameter integrity over full vehicle lifetime under hood conditions.
SPI clock frequency Up to 50 MHz; achieves ~5 MB/s sequential write throughput, eliminating bottlenecks in high-speed CAN/FlexRay loggers.
Operating voltage 1.8 V to 3.6 V; compatible with 2.5 V/3.3 V automotive microcontroller I/O domains without level shifting.
Deep Power Down current 1.1 µA (typ); allows persistent memory state maintenance during ECU sleep modes without battery drain.
Package 8-pin SOIC (3.9 mm × 4.9 mm); industry-standard footprint for drop-in replacement of serial EEPROM/flash.

Pinout & Package

8-pin Small Outline Integrated Circuit (SOIC) package, 3.9 mm × 4.9 mm body, 1.27 mm pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
CS Chip Select input Active-low enable; places device in standby (2.7 µA) when HIGH, synchronizes all SPI transactions on falling edge.
SCK Serial clock input Drives all timing; inputs latched on rising edge, outputs driven on falling edge; supports 0–50 MHz with interrupt tolerance.
SI Serial input Receives opcodes, addresses, and write data; must be held valid during active CS to meet IDD specs.
SO Serial output Drives read data only during read operations; tristated otherwise; shares SI pin in single-wire configuration.
WP Write protect input Hardware lock for status register when WPEN = 1; must tie to VDD if unused to prevent accidental protection.
DNU Do-not-use terminal No internal connection; leave floating or tie to VDD - no electrical function or signal path.
VSS Ground reference Primary return path for all currents; requires low-impedance connection to system ground plane.
VDD Power supply input Supplies core and I/O circuits; decoupling capacitor (100 nF) required within 5 mm of pin per layout guidelines.

Key Features

Feature Design Value
Instant non-volatile write Zero write latency - data committed immediately after byte transfer; eliminates polling and timeout handling in firmware.
Dedicated 256-byte special sector Retains content through ≥3 reflow cycles (260°C peak); stores board-specific calibration or security keys without post-solder programming.
Multi-layer write protection Hardware (WP pin) + software (WRDI) + block-level (1/4, 1/2, full array) - enables secure partitioning of firmware vs. runtime data zones.
Device and serial identification Read-only 16-bit Device ID + unique ID + writable 8-byte serial number - supports traceability, counterfeit detection, and field firmware binding.

Applications

Engine Control Unit (ECU) Advanced Driver Assistance Systems (ADAS)

Use Scenario: Real-time recording of crankshaft position, throttle angle, and knock sensor events during misfire detection.

IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory capturing burst-mode sensor streams at 10 kHz without data loss during power transitions.

Use Value: 1013 write cycles ensure >15-year durability under aggressive logging; 50 MHz SPI sustains 5 MB/s throughput matching CAN FD log bandwidth.

Use Scenario: Storing lane-marking calibration offsets and camera lens distortion coefficients updated during vehicle initialization.

IC Role / Device Role / Timing Role: Configuration storage with guaranteed reflow survivability for post-manufacturing calibration data.

Use Value: Dedicated 256-byte sector retains calibration across PCB rework; 121-year retention prevents drift-induced ADAS false positives over vehicle life.

Electric Power Steering (EPS) Body Control Module (BCM)

Use Scenario: Logging torque sensor zero-point drift and motor phase current anomalies during steering column actuation.

IC Role / Device Role / Timing Role: High-endurance nonvolatile buffer for safety-critical fault diagnostics requiring deterministic write timing.

Use Value: Instant write capability meets ISO 26262 ASIL-B timing constraints; AEC-Q100 Grade 1 rating ensures operation at 125°C near motor drivers.

Use Scenario: Storing user preferences (seat position, mirror angle, climate settings) and door-lock event history.

IC Role / Device Role / Timing Role: Low-power nonvolatile memory retaining state during ignition-off periods with minimal battery load.

Use Value: 0.1 µA hibernate current extends 12 V battery life beyond 10 years; software block protection isolates user data from firmware updates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile serial memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY15B102QN-40SXI Same die, 40 MHz max SPI clock (vs. 50 MHz); identical voltage range, endurance, and package. Limited to lower-bandwidth logging (e.g., HVAC control vs. powertrain); same AEC-Q100 Grade 1 rating. Select when system clock budget permits margin or cost sensitivity outweighs throughput need.
AT25DF021A-SHN-T 2 Mb SPI flash; 100k write cycles, 20 ms page-program time, no instant-write capability; 2.7–3.6 V only. Requires wear leveling and write buffering; unsuitable for burst logging or ASIL-B timing-critical use. Only consider for static configuration storage where write frequency < 100×/day and latency tolerance > 20 ms.

Compared with CY15B102QN-40SXI, the -50SXET delivers 25% higher SPI throughput for time-sensitive logging; versus AT25DF021A-SHN-T, it eliminates write latency and extends endurance by 100 million-fold - critical for automotive functional safety compliance.

Availability

CY15B102QN-50SXET is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, electric power steering modules, and body control modules requiring stable component supply across automotive production lifecycles.

Supply support for CY15B102QN-50SXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global R&D and manufacturing infrastructure.

The EXCELON™ Auto F-RAM product line targets automotive applications demanding ultra-high endurance, instant nonvolatile writes, and AEC-Q100 reliability - specifically replacing legacy EEPROM and flash in safety-critical logging and configuration storage.

FAQ

Is CY15B102QN-50SXET pin-compatible with standard SPI EEPROMs like AT25XXX series?

Yes - it uses identical 8-pin SOIC pinout (CS, SCK, SI, SO, WP, VSS, VDD, DNU) and SPI command set alignment for READ/WRITE/STATUS operations. However, WP functionality differs: CY15B102QN-50SXET uses WP to protect the status register only when WPEN=1, whereas AT25XXX ties WP directly to block protection. Firmware must initialize WPEN via WRSR before enabling hardware protection.

Does the 256-byte special sector require separate addressing or commands?

Yes - it is accessed using dedicated opcodes (0x77 for read, 0x76 for write) and occupies fixed addresses 0x000000–0x0000FF. Unlike main array access, special sector writes do not require WREN pre-command and are not subject to block protection bits. Its contents survive reflow because it uses hardened ferroelectric cells with elevated thermal stability.

What is the minimum VDD slew rate supported during power-up?

The device specifies a maximum VDD ramp time of 100 ms from 0 V to 1.8 V per datasheet Section 8. Exceeding this may cause improper internal reset or status register corruption. A typical 10 µF bulk capacitor with 1 Ω series resistance yields ~10 ms ramp - well within spec. No external power-on reset circuit is needed if VDD rise meets this criterion.

Can SI and SO be shorted for single-pin SPI (3-wire mode)?

Yes - the datasheet explicitly permits SI/SO sharing (Section 2, Note 1). In this configuration, the host must tri-state its MISO line during transmit and enable bidirectional driver control. The device automatically manages direction: SO drives during read cycles, SI receives during write cycles. No additional control signals or external logic are required.

CY15B102QN-50SXET Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
F-RAM™
Package/Case:
8-SOIC (0.209", 5.30mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
-
Memory Type:
Non-Volatile
Memory Format:
FRAM
Technology:
FRAM (Ferroelectric RAM)
Memory Size:
2Mbit
Memory Organization:
256K x 8
Memory Interface:
SPI
Clock Frequency:
50 MHz
Write Cycle Time - Word, Page:
-
Access Time:
8 ns
Voltage - Supply:
1.8V ~ 3.6V
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

CY15B102QN-50SXET FAQ

1.How can I place an order for CY15B102QN-50SXET through Aetrix?

Please submit a Request for Quotation (RFQ) for CY15B102QN-50SXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY15B102QN-50SXET reliable?

The price and inventory of CY15B102QN-50SXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY15B102QN-50SXET is usually 5 days.

3.What payment methods are accepted for CY15B102QN-50SXET?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY15B102QN-50SXET transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY15B102QN-50SXET?

CY15B102QN-50SXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY15B102QN-50SXET order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY15B102QN-50SXET?

For technical support, including CY15B102QN-50SXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY15B102QN-50SXET requirements.

6.How does Aetrix verify that CY15B102QN-50SXET is sourced from the original manufacturer or authorized distributors?

All CY15B102QN-50SXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY15B102QN-50SXET meets industry standards.

7.What is the process for return or replacement of CY15B102QN-50SXET?

All CY15B102QN-50SXET units undergo pre-shipment inspection (PSI). If there is an issue with CY15B102QN-50SXET, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY15B102QN-50SXET part is unused and in its original packaging.

Return procedure for CY15B102QN-50SXET:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY15B102QN-50SXET Tags

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